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Kim, Jaehyeong,Jang, Jaeman,Bae, Minkyung,Lee, Jaewook,Kim, Woojoon,Hur, Inseok,Jeong, Hyun Kwang,Kim, Dong Myong,Kim, Dae Hwan The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
Jaehyeong Kim,Jaeman Jang,Minkyung Bae,Jaewook Lee,Woojoon Kim,Inseok Hur,Hyun Kwang Jeong,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
치어기 넙치(Paralichthys olivaceus) 사료 내 돈모분(Pig Bristle Meal)의 어분대체 가능성 평가
김유정 ( Youjeong Kim ),신재형 ( Jaehyeong Shin ),권황원 ( Hwangwon Kwon ),이소연 ( Soyoon Lee ),김주민 ( Joo-min Kim ),김민기 ( Min-gi Kim ),김정대 ( Jeong-dae Kim ),이경준 ( Kyeong-jun Lee ) 한국수산과학회(구 한국수산학회) 2018 한국수산과학회지 Vol.51 No.2
This study was conducted to evaluate dietary hydrolyzed pig bristle meal (PBM) for juvenile olive flounder Paralichthys olivaceus. In Experiment 1 (EXP-1), six experimental diets were prepared to contain 0, 3, 6, 9, 12 and 15% PBM (designated Con, PBM3, PBM6, PBM9, PBM12 and PBM15, respectively). Triplicate groups of olive flounder (initial body weight, 8.69 g) were fed the diets to apparent satiation for 8 weeks during the optimal water temperature season (20.5±2.12℃). All PBM supplemented groups except for PBM3 showed significantly lower growth performance and feed utilization compared to the control group. The protein digestibility of PBM3, PBM6, and PBM9 diets did not significantly differ from that of the control diet. In Experiment 2, 1% mono-calcium phosphate was added into the experimental diets used in Exp-1. Triplicate groups of olive flounder (10.6 g) were fed the diets to apparent satiation for 8 weeks during the low water temperature season (12.5±1.12℃). The growth performances and feed utilization of fish fed all diets except for PBM15 diet did not significantly differ from those of the control diet. This study indicates that hydrolyzed PBM can replace fish meal by up to 12% with limiting amino acids and mono-calcium phosphate in diets for juvenile olive flounder.
Minkyung Bae,Yongsik Kim,Dongsik Kong,Hyun Kwang Jeong,Woojoon Kim,Jaehyeong Kim,Inseok Hur,Dong Myong Kim,Dae Hwan Kim IEEE 2011 IEEE electron device letters Vol.32 No.11
<P>Analytical drain current and gate capacitance models for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) over sub- and above-threshold regions are proposed by adopting an effective carrier density for the dominant carrier density. The effective carrier density fully considers the free carriers in the conduction band, the localized subgap deep states, and tail states over the bandgap for analytical <I>I</I>-<I>V</I> and <I>C</I>-<I>V</I> characteristics. The proposed analytical models are verified by comparing the measured <I>I</I>-<I>V</I> and <I>C</I>-<I>V</I> characteristics. The proposed models make a time-efficient simulation of a-IGZO TFT-based circuits possible due to their analytical form.</P>
Inseok Hur,Hagyoul Bae,Woojoon Kim,Jaehyeong Kim,Hyun Kwang Jeong,Chunhyung Jo,Sungwoo Jun,Jaewook Lee,Yun Hyeok Kim,Dae Hwan Kim,Dong Myong Kim IEEE 2013 IEEE electron device letters Vol.34 No.2
<P>Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect mobility μ<SUB>FEo</SUB> in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by de-embedding the parasitic source and drain resistances <I>R</I><SUB>S</SUB> and <I>R</I><SUB>D</SUB>, respectively. We obtained the channel-length (<I>L</I>) -independent intrinsic field-effect mobility μ<SUB>FEo</SUB> from TFTs with various channel lengths on the same wafer. We expect that this characterization technique for <I>L</I>-independent intrinsic field-effect mobility is useful for accurate characterization, consistent modeling, and robust simulation of a-IGZO TFT circuits.</P>