포켓 이온 주입된 MOSFET소자의 1/f 잡음 특성

이병헌,이기영 대한전자공학회 2004 電子工學會論文誌-SD (Semiconductor and devices) Vol.41 No.3

본 연구에서는 소오스와 드레인 근처에 포켓형상으로 이온이 주입되어 halo구조를 갖고 있는 MOSFET 소자의 1/f 잡음 특성에 대하여 고찰하였다. 채널 방향으로 전도도가 균일하지 않은 MOSFET 소자가 선형영역에서 동작할 때, 영역구분 근사기법(regional approach)을 근간으로 논의된 기존의 1/f 잡음모델을 영역별로 서로 다른 전기적 성질이 정의될 수 있는 halo MOSFET 소자에 적용하여 그 타당성을 조사하였다. 잡음모델의 검증을 위하여 기존의 모델에서와 같이 영역구분 근사를 사용하여 보다 넓은 동작범위에서 적용될 수 있도록 기존의 모델식을 개선하였다. 개선된 잡음식은 선형영역에서 기존에 보고된 잡음식에 수렴한다. 실험적으로 측정된 1/f 잡음 특성과의 비교에서 영역구분 근사기법으로 정리된 잡음식은 게이트 전압이 비교적 큰 경우에 한해서 적용될 수 있음을 보였다. The anomalous behavior of the 1/f noise of halo or pocket ion implanted MOSFETs is investigated. The model for the anomalous 1/f noise behaviors of MOSFETs, which consist of inhomogeneous conductance along the channel is improved within a regional approximation as previous works and presented in a fen directly applicable to halo MOSFETs. The presented model reduces to the previous results, discussed in the linear region operation, for small drain bias. Comparisons with experimental results show that the 1/f model based on the regional approach can be applicable for limited ranges, especially for sufficiently large gate bias voltages.

1/<i>f</i> noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer

Im, Ki-Sik,Choi, Jinseok,Hwang, Youngmin,An, Sung Jin,Roh, Jea-Seung,Kang, Seung-Hyeon,Lee, Jun-Hyeok,Lee, Jung-Hee Elsevier 2019 MICROELECTRONIC ENGINEERING Vol.215 No.-

<P><B>Abstract</B></P> <P>We investigate the DC and 1/<I>f</I> noise properties in Al<SUB>0.25</SUB>Ga<SUB>0.75</SUB>N/GaN high-electron mobility transistors (HEMTs) with two types of 2 μm-thick periodically carbon-doped GaN buffer layer (PC-doped GaN buffer) with and without inserting the 30 nm-thick Al<SUB>0.05</SUB>Ga<SUB>0.95</SUB>N back barrier layer between the GaN channel layer and the PC-doped GaN buffer. The PC-doped GaN buffer layer consists of multiple layers of 12 nm-thick C-doped GaN layer with doping concentration of 1 × 10<SUP>18</SUP> cm<SUP>−3</SUP> and 50 nm-thick undoped GaN layer with unintentional n-typing concentration of 2 × 10<SUP>16</SUP> cm<SUP>−3</SUP>. A reference AlGaN/GaN HEMT with 2 μm-thick highly-resistive GaN buffer layer without C-doping is also fabricated for comparison. Similarly to the reference AlGaN/GaN HEMT, the AlGaN/GaN HEMTs with PC-doped GaN buffer show typical 1/<I>f</I> noise characteristics mainly due to the trapping effects at the AlGaN/GaN interface from subthreshold region to strong-accumulation region, which indicates that the deep trapping effects in the PC-doped GaN buffer layer is negligible, and experience the correlated mobility fluctuations (CMF), which is convinced from the drain current power spectral density (PSD) versus drain current. At off-state (deep-subthreshold region), on the other hand, the HEMTs with the PC-doped GaN buffer layer exhibit 1/<I>f</I> <SUP>2</SUP> noise characteristics, which are closely related to the generation-recombination (g-r) noise caused by the spatial trapping/detrapping process between the deep acceptor in the C-doped layer and the shallow donor in the undoped layer in the PC-doped GaN buffer, while the reference HEMT still shows typical 1/<I>f</I> noise characteristics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Noise characteristics in AlGaN/GaN HEMTs with/without PC-doped buffer layer were investigated. </LI> <LI> PC-doped buffer layer consists of 12 nm-thick carbon-doped GaN and 50 nm-thick un-doped GaN. </LI> <LI> All devices exhibited 1/<I>f</I> noise properties and CMFs from subthreshold to strong-accumulation. </LI> <LI> At off-state, PC-doped buffer devices exhibited 1/<I>f</I> <SUP>2</SUP> noise properties at frequency > 40 Hz. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

십자형 CMOS 홀 플레이트 및 오프셋, 1/f 잡음 제거 기술 기반 자기센서 신호처리시스템 설계

허용기(Yong-Ki Hur),정원재(Won-Jae Jung),이지훈(Ji-Hun Lee),남규현(Kyu-Hyun Nam),유동균(Dong-Gyun Yoo),윤상구(Sang-Gu Yoon),민창기(Chang-Gi Min),박준석(Jun-Seok Park) 대한전자공학회 2016 전자공학회논문지 Vol.53 No.5

본 논문은 CMOS 자기센서(hall Sensor)의 오프셋 및 1/f 잡음 제거기술 기반 고선형 자기센서 신호처리장치를 제안한다. 제안하는 자기센서는 자계(magnetic Field)를 감지하여 자계의 변화량에 따른 홀 전압(hall Voltage)을 출력하는 홀 플레이트(hall Plate)와 홀 플레이트 출력 신호의 오프셋과 1/f 잡음 제거 및 디지털화를 위한 자기센서 신호처리시스템으로 구성된다. 자기센서 신호처리 시스템은 스피닝 전류 바이어싱(spinning current biasing)을 통해 자기신호로부터 오프셋과 1/f잡음 성분을 분리하고, 초퍼 및 증폭기를 통해 자기신호를 100 kHz 주파수 대역으로 변조한다. 60 kHz 차단주파수를 갖는 고역통과필터(highpass filter)를 사용하여 오프셋 및 1/f 잡음을 제거한뒤 ADC(analog to digital converter)를 통해 자기신호만을 디지털 변조한다. 증폭기 및 고역통과필터 출력은 자기신호 -53.9 dBm @ 100 kHz, 잡음성부은 -101.3 dBm @ 10 kHz이다. 최종적으로 ADC를 통과한 자기센서 출력은 -5.0 dBm @ 100 kHz이고, 오프셋 및 1/f 잡음은 -55.0 dBm @ 10 kHz이다. This paper describes an offset and 1/f noise cancellation technique based hall sensor signal processor. The hall sensor outputs a hall voltage from the input magnetic field, which direction is orthogonal to hall plate. The two major elements to complete the hall sensor operation are: the one is a hall sensor to generate hall voltage from input magentic field, and the other one is a hall signal process system to cancel the offset and 1/f noise of hall signal. The proposed hall sensor splits the hall signal and unwanted signals(i.e. offset and 1/f noise) using a spinning current biasing technique and chopper stabilizer. The hall signal converted to 100 kHz and unwanted signals stay around DC frequency pass through chopper stabilizer. The unwanted signals are bloked by highpass filter which, 60 kHz cut off freqyency. Therefore only pure hall signal is enter the ADC(analog to dogital converter) for digitalize. The hall signal and unwanted signal at the output of an amplifer and highpass filter, which increase the power level of hall signal and cancel the unwanted signals are -53.9 dBm @ 100 kHz and -101.3 dBm @ 10 kHz. The ADC output of hall sensor signal process system has -5.0 dBm hall signal at 100 kHz frequency and -55.0 dBm unwanted signals at 10 kHz frequency

채널구조와 바이어스 조건에 따른 Si_0.8Ge_0.2 pMOSFET의 저주파잡음 특성

최상식,양현덕,김상훈,송영주,이내응,송종인,심규환,Choi Sang-Sik,Yang Hun-Duk,Kim Sang-Hoon,Song Young-Joo,Lee Nae-Eung,Song Jong-In,Shim Kyu-Hwan 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.1

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

Sputtering pressure dependent bolometric properties of Ni_1−xO thin films for uncooled bolometer applications

Kang, In-Ku,Kumar Reddy, Y. Ashok,Bong Shin, Young,Young Kim, Woo,Chul Lee, Hee Elsevier 2017 Ceramics international Vol.43 No.12

<P><B>Abstract</B></P> <P>The aim of this study is to investigate the dependence of the sputtering pressure on the bolometric properties of Ni<SUB>1−x</SUB>O films. In order to analyze the structural properties, X-ray diffraction and X-ray photoelectron spectroscopy studies were conducted for Ni<SUB>1−x</SUB>O films deposited at various sputtering pressures. As a result, it was confirmed that all of the films had a Ni-deficient non-stoichiometric structure and that the films deposited at higher sputtering pressures revealed a more crystallized structure with fewer structural defects. The variation of the structural characteristics induced by the sputtering pressure also affected several electrical properties, known as the bolometric properties, including the electrical conductivity, temperature coefficient of resistivity and 1/f noise. With increasing the sputtering pressure from 1mTorr to 10mTorr, the electrical conductivity decreased from 1.0×10<SUP>−2</SUP> S/cm to 2.2×10<SUP>−5</SUP> S/cm while the absolute value of the temperature coefficient of resistivity increased from 2.76%/K to 5.62%/K, respectively. In addition, the magnitude of the 1/f noise also increased with an increase in the sputtering pressure. To evaluate and compare the bolometric performance, we introduced the material figure of merit, (<I>α</I> <SUB> <I>H</I> </SUB>/<I>n</I>)<SUP>1/2</SUP>/|β|, which was determined by both the TCR and the 1/f noise. As a result, the films deposited at a lower sputtering pressure exhibited a lower value of (<I>α</I> <SUB> <I>H</I> </SUB>/<I>n</I>)<SUP>1/2</SUP>/|β|, implying that these films are capable of better bolometric performance. Consequently, this research reveals that the sputtering pressure is an important parameter influencing the bolometer performance capabilities of Ni<SUB>1−x</SUB>O films.</P>

The jitter and phase noise caused by 1/f noise of MOSFET in 2.75 GHz CMOS ring oscillator

박세훈 ( Se Hoon Park ) 한국센서학회 2005 센서학회지 Vol.14 No.1

N/A It has been known that 1/f noise of MOSFET is generated by superposition of random telelgraph signals (RTS). In this study, jitters and phase noise caused by I/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of 1,El of the output of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

Charge-based Quantum Correction Noise Model in Nanoscale MOSFETs

Jonghwan Lee,Daeki Hong 대한전자공학회 2019 Journal of semiconductor technology and science Vol.19 No.1

A charge-based quantum correction model for the gate and drain current noise in nanoscale MOSFETs is presented. The model is analytically formulated by incorporating the quantum mechanical (QM) effects in the inversion layer into the classical noise models. For efficient computation, the quantum mechanical models are calculated for the lowest quantized energy level, which is a reasonable approximation. On the basis of the quantum correction model of the oxide voltage and oxide thickness, the gate leakage tunneling current and 1/f noise model are evaluated for ultrathin gate oxide MOS devices. The quantum models of the drain current and noise are obtained by accounting for the QM effects through the inversion charge density model. For the 1/f drain current noise due to the number fluctuation components, the classical and QM models behave in a quantitatively similar fashion to the random telegraph signal (RTS) noise in both the weak and strong inversion, showing a noticeable deviation in the saturation region. It is also shown that QM effects in the inversion layer are important to the thermal noise modeling and, for the accurate noise modeling of nanoscale MOSFETs, become more pronounced for higher doping concentration and thinner oxide thickness.

1/f 변동리듬을 합성한 음악의 감성효과에 관한 연구

유서희(Suhhee Yoo),이정년(Jung-Nyun Lee),김영주(Young-Joo Kim),황민철(Mincheol Whang) 한국HCI학회 2017 한국HCI학회 학술대회 Vol.2017 No.2

본 연구는 White noise 와 Pink noise 가 합성된 음원이 심혈관반응 및 감성에 미치는 영향을 분석하였다. 피험자는 성인 12 명이었으며, 노이즈를 합성하지 않은 클래식 1 곡, 락 1 곡을 청취한 후, 동일 음원에 White noise 와 Pink noise 를 합성한 음원을 청취한 뒤 발생하는 심혈관계반응((beat per minute (BPM))과 자극에 대한 주관평가를 분석하였다. 그 결과 클래식 음악의 경우, White noise 를 합성하였을 때 정규화한 BPM 이 유의미하게 증가함을 확인하였다. 주관평가의 경우 쾌/불쾌 반응에서만 유의한 차이를 보였으나 각성/이완 반응에서는 유의한 차이를 보이지 않았다. 이를 토대로 일부 음악장르에서 White noise 를 합성할 경우, 일반적으로 알려진 White noise 의 효과와 달리 각성 및 불쾌감을 유도할 수 있는 가능성을 확인하였다.

1/f Noise Characteristics of Sub-100 nm MOS Transistors

Jeong-Hyun Lee,Sang-Yun Kim,Ilhyun Cho,Sungbo Hwang,Jong-Ho Lee 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.1

We report 1/f noise PSD(Power Spectrum Density) of sub-100 nm MOSFETs as a function of various parameters such as HCS (Hot Carrier Stress), bias condition, temperature, device size and types of MOSFETs. The noise spectra of sub-100 nm devices showed Lorentzian-like noise spectra. We could check roughly the position of a dominant noise source by changing VDS. With increasing measurement temperature, the 1/f noise PSD of 50 nm PMOS device decreases, but there is no decrease in the noise of NMOS device. RTN (Random Telegraph Noise) was measured from the device that shows clearly a Lorentzian-like noise spectrum in 1/f noise spectrum.

Pink Noise가 개인별 특성에 따라 뇌파 집중지표에 미치는 영향과 다중지능과의 관계

신성권 ( Seong Kweon Shin ),심준영 ( Jun Young Shim ) 한국감성과학회 2013 감성과학 Vol.16 No.4

이 연구는 성인 남녀 462명을 대상으로 사전 설문검사를 통해 성별, 손잡이, 혈액형, 연령 등의 개인별 특성 집단과 다중지능 유형별 점수를 분류하였다. 그런 다음 뇌파측정시스템을 이용하여 전전두엽 부위인 Fp1과 Fp2 부위에 측정 전극을 부착하고 무자극 상태와 순수한 Pink noise 청각자극 상태에서의 집중력의 변화와 다중지능과의 관계를 알아보고자 하였다. 공분산분석 결과, 무자극에 비해 Pink noise 자극 시 대상자 전체의 평균 집중력이 유의하게 높게 나타났다. 개인별 특성에서는 남녀 성별을 제외한 왼손잡이, A형, 30대 집단에서 집중력이 유의하게 높게 나타났다. 그리고 무자극에 비해 Pink noise 상태의 집중력은 공간적 지능과의 관계가 더욱 강화되었고, 음악적 지능과는 음적 상관관계를 형성하였다. 이러한 결과는 집중력 향상을 위한 Pink noise 활용 시 개인별 특성을 반영해야할 필요성이 있음을 시사하였다. This study sorted scores of individual characteristics and multiple intelligence by sex, handle, blood type and age through previous questionnaire with 462 adult males and females. Then electrode was attached to prefrontal lobes Fp1 and Fp2 with EEG measuring system and changes of concentration between no stimulation state and pure pink noise stimulation and their relations to multiple intelligence were examined. As a result of analysis of covariance, the mean concentration of all subjects was significantly higher in the pink noise stimulation compared to no stimulation. According to individual characteristics, concentration was significantly higher in left-hander, type A blood, and group in their thirties except for gender. Concentration in pink noise state strengthened the relation to spatial intelligence and made negative correlations with musical intelligence compared to no stimulation state. These results suggested that individual characteristics should be reflected on using pink noise for improving concentration.