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이내응 한국피부장벽학회 2016 한국피부장벽학회지 Vol.18 No.2
최근 용이하게 휴대하거나 또는 인체에 착용, 부착 또는 삽입하여 질병의 진단 및 모니터링, 건강상태 모니터링, 치료예후 모니터링, 지병환자나 노인의 모니터링 등이 가능한 다양한 스마트 헬스 모니터링 시스템 개발에 대한 연구가 활발히 진행이 되고 있다. 특히 피부에 부착하여 사람의 활동성, 생리변수 측정, 바이오 마커의 검출 등의 기능을 갖는 신축성을 갖는 센서소자는 웨어러블 스마트 헬스모니터링 시스템 개발을 위한 핵심 요소기술 중의 하나이다. 본 발표에서는 먼저 피부부착형 신축성 센서소자개발 동향을 살펴보고, 피부부착형 웨어러블 헬스모니터링 시스템에 적용이 가능한 나노물질 (나노막대, 나노와이어, 산화환원그래핀, 그래핀 등)과 고분자탄성체와의 나노복합소재에 기반한 물리, 화학 및 바이오센서 소자의 예 및 적용가능 분야에 대하여 발표하고자 한다.
이내응 成均館大學校 科學技術硏究所 1998 論文集 Vol.49 No.2
Measurements of surface roughness become increasingly important as the electronic devices get smaller and require the control of interface structure in the atomic scale frequently. Therefore, the understanding of measurement techniques and roughening phenomena during semiconducting thin film materials processing is important in tailoring the morphologies of thin film interfaces. Quantitative measurements of thin film surface roughness can be achieved by atomic force microscopy (AFM) and/or transmission electron microscopy depending on the scale of roughness. During the deposition of group N and its alloys (Si, Ge, Si_(1-x)Ge_x) while surface roughness evolves kinetically at the low temperature far from the equilibrium, thermodynamic driving forces such as surface or strain energy reduction are dominant determining factors at the elevated growth temperatures.
Effect of Plasma Modulation on Si Chemical Dry Etching in F2 Remote Plasmas
이내응,Y. B. Yun,S. M. Park 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Nitric oxide (NO) gas directly injected into the chamber enhanced the Si chemical dry etch (CDE) rate in F2 remote plasmas but, this rate gradually decreased with increasing etch time. By simultaneously modulating the on/off time of F2 remote plasmas and NO injection, we could increase the Si etch depth during the same total plasma-on time. The increased etch depth with increasing plasma-off time was ascribed to enhanced desorption of etch product molecules on the Si surface during the plasma-off time.
이내응,D. J. Kim,S. M. Park,N. D. Nam,J.-G. Kim 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
In this work, SiOCH and plasma-polymerized methylcyclohexane (pp-MCH) films and pp- MCH/SiOCHmulti-layers for applications to transparent diffusion barier layers were deposited by using low-temperature plasma-enhanced chemical-vapor deposition (PECVD). In particular, one- chamber plasma procesing was applied for multi-stack layer deposition using hexamethyldisiloxane (HMDSO)/O2/Ar gas and methylcyclohexane (MCH)/Ar gas mixtures for SiOCH and pp-MCH layers, respectively. Increasing the RF plasma power enhanced the disociation of HMDSO and MCH precursors, leading to an enhanced deposition rate and les incorporation of organic groups into the films. Even though the optical transmitance values measured by using ultraviolet-visible spectroscopy at shorter wavelength of les than 400 nm were decreased more with increasing RF power, the deposited films showed good transmitance (≥99 %) in the visible region. Increased protective efficiencies of SiOCH and pp-MCH films up to maximum values of 99.84 % and 99.57 % at700W, respectively, with increasing RF power are atributed to the enhanced formation of SiO2 and CC bonding congurations for each film.
Epitaxial thickness during low - temperature Si(001) growth : effect of substrate vicinality
이내응(N.-E. Lee) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.4(2)
초고진공 이온빔 스퍼터 장치를 이용하여 80~300℃의 기판온도 (T_s) 범위에서 실리콘 기판의 정상(001)면과 [100] 및 [110] 방향으로 기울어진 vicinal (001)면위에 성장된 실리콘 박막의 에피텍시 두께 t_e(T_s)를 측정하였다. vicinal 기판위에 성장된 실리콘 박막의 에피텍시 두께 t_e(T_s)가 정상 (001)면에 성장시킨 경우에 비교하여 감소하였다. 300℃의 기판온도에서 박막의 성장두께에 따른 표면조도의 변화를 atomic force microscopy을 이용하여 측정결과로 부터 vicinal 기판위의 증가된 step 밀도가 표면 조도를 증가시키어 불안정 성장 경향을 증대시키고 이것이 에피텍시 두께를 감소시키는 원인으로 작용하였음을 알 수 있었다. Epitaxial thickness t_e(T_s) of Si films grown at the substrate temperature T_s=80~300℃ by ultra-high vacuum ion-beam sputter deposition onto nominally-singular, [100]-, and [110]-miscut Si(001) was measured. t_e(T_s) values of films grown on vicinal Si(001) substrates were decreased compared to those of films grown on nominally-singular Si(001). Evolution of surface roughness measured by atomic force microscopy of films grown at 300℃ showed that the increased step density in vicinal substrates increases the tendency toward unstable growth resulting in larger surface roughness, which in turn decreases t_e.