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비디오 카테고리 분류를 위한 고차원 멀티모달 표현 방법에 대한 분석
강성훈(Sunghun Kang),유창동(Chang D. Yoo) 대한전자공학회 2018 대한전자공학회 학술대회 Vol.2018 No.11
This paper consider an analysis on a deep learning based high-order multimodal representation for video categorization. The high-order representation calculates outer product and sum pooling among different modality input features. The outer product provides 2nd and higher-order statistic of features to classifier. To verify its effectiveness of high-order representation for video categorization, FCVID dataset is used. From experimental results, multimodal representation with high-order statistic achieved better accuracy than baseline models.
Sunghun Cho,DongSoo Lee,Juri Lee,Hyung-Gu Park,YoungGun Pu,Sang-Sun Yoo,Keum Cheol Hwang,Youngoo Yang,Cheon-Seok Park,Kang?Yoon Lee 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.3
This paper presents a 4-channel multi-rate vertical-cavity surface-emitting laser (VCSEL) driver. In order to keep the output power constant with respect to the process, voltage, temperature (PVT) variations, this research proposes automatic power and magnitude. For the fast settling time, the high-speed 10-bit time-interleaved Flash-successive approximation analog to digital converter (Flash-SAR ADC) is proposed and shared for automatic power and magnitude calibration to reduce the die area and power consumption. This chip is fabricated using 0.13-μm CMOS technology and the die area is 4.2 mm². The power consumption is 117.84 mW per channel from a 3.3 V supply voltage at 10 Gbps. The measured resolution of bias /modulation current for APC/AMC is 0.015 mA.
Designing Vegetables and Fruits for Improved Nutrition and Health – Calcium
Sunghun Park,Ning Hui Cheng,Jon K. Pittman,Kil Sun Yoo,Jungeun Park,Tae-Suk Kang,Chang-Kil Kim,Jeung-Sul Han,Sunggil Kim,Leonard M. Pike,Roberta H. Smith,Bhimanagouda S. Patil,Kendal D. Hirschi 한국원예학회 2006 한국원예학회 기타간행물 Vol.- No.-
우성훈(SungHun Woo),신태호(TeaHo Shin),강현일(Hyunil Kang),최원석(WonSeok Choi),김현석(HyunSuk Kim),김정현(JungHyun Kim) 한국신재생에너지학회 2019 신재생에너지 Vol.15 No.2
In this study, non-stoichiometric compositions of Sm<SUB>1-x</SUB>Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>Co₂O<SUB>5+d</SUB> (x=0~0.25) oxide systems were synthesized as the cathode materials in an Intermediate Temperature-Operating Solid Oxide Fuel Cell (IT-SOFC) by partially removing Sm from SmBa<SUB>0.5</SUB>Sr<SUB>0.5</SUB>Co₂O<SUB>5+d</SUB> (SBSCO). The resulting cathode showed superior oxide ionic diffusivity, excellent oxygen surface exchange coefficients, high oxygen transport properties, and higher electrical conductivity. The composition ranges for the single phases of Sm<SUB>1-x</SUB>Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>Co₂O<SUB>5+d</SUB> were in the ranges of x=0 to 0.10. At these non-stoichiometric compositions, Sm<SUB>0.95</SUB>Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>Co₂O<SUB>5+d</SUB> (SBSCO-0.95) showed the highest electrical conductivity of 380 and 310 S/cm at 600 and 700°C. The area specific resistances (ASRs) of the composite cathode of 50 wt % of SBSCO-0.95 and 50 wt % of CGO91 (SBSCO-0.95:CGO91) were 0.40, 0.19, 0.09 and 0.05Ω㎠ at 650, 700, 750 and 800°C, respectively. The activation energy of SBSCO-0.95 : CGO91 was the lowest at 1.16eV.
노성훈(Sunghun Noh),강남훈(NamHun Kang),윤희근(Heuikeun Yun),김형준(Hyeong-Jun Kim) 한국세라믹학회 2019 세라미스트 Vol.22 No.4
A quartz glass crucible is the essential material for manufacturing silicon ingots such as semiconductors and solar cells. Quartz glass crucibles for semiconductors and solar cells are made similar, but differ in surface purity, structure and durability. Recently, ultra high purity synthetic glass crucibles for semiconductors have become more important due to foreign problems. In Korea, it has succeeded in producing 28-inch quartz glass crucibles through the past 10 years. However, 32-inch synthetic quartz glass for the production of silicon ingots for semiconductors is not up to the level of advanced technology, and the technology gap is expected to be 2 to 3 years. In order to overcome these technological gaps and localize synthetic quartz glass ware, close cooperation between production companies and demand companies and localization of synthetic quartz glass powder must also be made. In addition, if government support can be added, faster results can be expected.
Automotive Piezo-Resistive Type Pressure Sensor 신호 처리 아날로그 전단부 IC 설계
조성훈(Sunghun Cho),이동수(Dongsoo Lee),최진욱(Jinwook Choi),최승원(Seungwon Choi),박상현(Sanghyun Park),이주리(Juri Lee),이강윤(Kang-Yoon Lee) 대한전자공학회 2014 전자공학회논문지 Vol.51 No.8
본 논문은 Piezo Resistive Type(PRT) 압력 센서용 신호 처리 아날로그 전단부 IC 설계를 주제로 한다. 센서의 출력 전압을 개선을 하기 위해 센서의 전류를 보상하는 Gauge Factor Calibration 회로, 같은 센서와의 오차가 있더라도 적용이 가능하도록 설계한 Programmable Gain Amplifier (PGA), 클록 생성기에서 발생하는 EMI를 감소시키기 위한 확산 스펙트럼 클록 생성기, 압력 센서의 분해능을 향상시키기 위한 10Bit ADC와 14Bit DAC 그리고 기존 아날로그 방식으로 처리하던 방식과는 달리 디지털 신호처리 방식을 이용한 Calibration Microcontroller (CMC)를 설계하였다. 0.35 μm CMOS Process를 이용하여 설계 하였으며, 설계된 IC의 공급 전압은 5V와 3.3V의 전원 분리를 통하여 아날로그 회로는 5V를 사용하고 디지털 회로는 LDO로부터 3.3V를 공급 받도록 구성하였다. Gauge Factor Calibration 회로는 3.75uA부터 120uA까지 보상이 가능하며 PGA는 30dB부터 45dB까지 제어가 가능하고 확산 스펙트럼 클록 생성기는 2.13dB에서 -5.94dB로의 EMI를 감소시킬 수 있다. 공급전압에 대한 ASIC 보호 회로는 800mV부터 6.4V를 제외한 나머지 전압은 차단이 가능하고 14Bit DAC는 0.305mV의 해상도를 가지고 있다. 총 전류 5.32mA를 소모하고 있으며, Die 크기는 1.94 mm x 1.94 mm 의 면적을 갖는다. In this paper, a design of Signal Processing Analog Front-End IC for Automotive Piezo-Resistive Type Pressure Sensor is presented. In modern society, as the car turns to go from mechanical to electronic technology, the accuracy and reliability of electronic parts required importantly. In order to improve these points, Programmable Gain Amplifier (PGA) amplifies the received signal in accordance with gain for increasing the accuracy after PRT Sensor is operated to change physical pressure signals to electrical signals. The signal amplified from PGA is processed by Digital blocks like ADC, CMC and DAC. After going through this process, it is possible to determine the electrical signal to physical pressure signal. As processing analog signal to digital signal, reliability and accuracy in Analog Front-End IC is increased. The current consumption of IC is 5.32mA. The die area of the fabricated IC is 1.94mm x 1.94mm.
Single Crystalline β-Ag<sub>2</sub>Te Nanowire as a New Topological Insulator
Lee, Sunghun,In, Juneho,Yoo, Youngdong,Jo, Younghun,Park, Yun Chang,Kim, Hyung-jun,Koo, Hyun Cheol,Kim, Jinhee,Kim, Bongsoo,Wang, Kang L. American Chemical Society 2012 NANO LETTERS Vol.12 No.8
<P>A recent theoretical study suggested that Ag<SUB>2</SUB>Te is a topological insulator with a highly anisotropic Dirac cone. Novel physics in the topological insulators with an anisotropic Dirac cone is anticipated due to the violation of rotational invariance. From magnetoresistance (MR) measurements of Ag<SUB>2</SUB>Te nanowires (NWs), we have observed Aharanov–Bohm (AB) oscillation, which is attributed to the quantum interference of electron phase around the perimeter of the NW. Angle and temperature dependences of the AB oscillation indicate the existence of conducting surface states in the NWs, confirming that Ag<SUB>2</SUB>Te is a topological insulator. For Ag<SUB>2</SUB>Te nanoplates (NPLs), we have observed high carrier mobility exceeding 22 000 cm<SUP>2</SUP>/(V s) and pronounced Shubnikov–de Haas (SdH) oscillation. From the SdH oscillation, we have obtained Fermi state parameters of the Ag<SUB>2</SUB>Te NPLs, which can provide valuable information on Ag<SUB>2</SUB>Te. Understanding the basic physics of the topological insulator with an anisotropic Dirac cone could lead to new applications in nanoelectronics and spintronics.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2012/nalefd.2012.12.issue-8/nl301763r/production/images/medium/nl-2012-01763r_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl301763r'>ACS Electronic Supporting Info</A></P>
Cho, Sunghun,Lee, DongSoo,Lee, Juri,Park, Hyung-Gu,Pu, YoungGun,Yoo, Sang-Sun,Hwang, Keum Cheol,Yang, Youngoo,Park, Cheon-Seok,Lee, Kang-Yoon The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.3
This paper presents a 4-channel multi-rate vertical-cavity surface-emitting laser (VCSEL) driver. In order to keep the output power constant with respect to the process, voltage, temperature (PVT) variations, this research proposes automatic power and magnitude. For the fast settling time, the high-speed 10-bit time-interleaved Flash-successive approximation analog to digital converter (Flash-SAR ADC) is proposed and shared for automatic power and magnitude calibration to reduce the die area and power consumption. This chip is fabricated using $0.13-{\mu}m$ CMOS technology and the die area is $4.2mm^2$. The power consumption is 117.84 mW per channel from a 3.3 V supply voltage at 10 Gbps. The measured resolution of bias /modulation current for APC/AMC is 0.015 mA.