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조영득,방욱,김상철,김남균,구상모,Jo, Yeong-Deuk,Bahng, Wook,Kim, Sang-Cheol,Kim, Nam-Kyun,Koo, Sang-Mo 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.8
The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.
Plasma Etch Damage가 (100) SOI에 미치는 영향의 C-V 특성 분석
조영득,김지홍,조대형,문병무,조원주,정홍배,구상모,Jo, Yeong-Deuk,Kim, Ji-Hong,Cho, Dae-Hyung,Moon, Byung-Moo,Cho, Won-Ju,Chung, Hong-Bay,Koo, Sang-Mo 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.