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방욱,김헝준,Bang, Wook,Kim, Hyeong-Joon 한국결정학회 1992 韓國結晶學會誌 Vol.3 No.2
B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases. Si(100) 기판위에 화학 기 장 증착법으로 상압에서 베타 탄화규소(β-SiC) 박막을 성장시키고 증착 조건이 박막의 물성 특히,기판 방향으로의 배향성과 결 정성에 미치는 영향에 대하여 고찰하여 보았다. 원료 가스로 SiH4와 CH4, 전달 가스로 H2를 사용하였다. 성장 온도, 원료 가스의 조성비,전달 가스에 대한 전 체 원료 가스의 비를 변화시키면서,이들 증착조건이 성장된 박막의 물성에 미치는 영향을 SEM, a-step, XRD, Raman Sepctroscopy, TEM 등을 이용하여 분석하였다. Chemical conversion과정을 통하여 SiC 버퍼층을 형성시킬 때 양질의 박막을 얻을 수 있었으며, CH4가SiH4에 대해 과량일때와 온도가 1150℃ 이상 일때 결정성이 좋아짐을 알 수 있었다. 또한, 결정성 이 좋아질수록 기판 방향으로의 배향성이 좋아짐도 관찰되었다. 결정성이 좋은 박막의 TEM분석 결과 성장 초기에 비해 표면으로 갈수록 결정이 커지는 것을 알 수 있었으며, 적층결함 및 쌍정 등의 분포정도는 원료 가스의 조성비와 무관하였다.
강인호,방욱,문정현,윤승복 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.9
This paper introduces a phenomenon in which the leakage current of a 4H-SiC PiN diode was dramatically reduced without destruction during a bias stress. The reverse current-voltage characteristics of the 4H-SiC PiN diode were improved by using the bias-stress technique employing this phenomenon. Compared to a PiN diode bias-stressed for 10 s, a PiN diode bias-stressed for 600s showed about a 2 order of magnitude lower leakage current and a 2.2 times higher breakdown voltage (1322 V for a PiN diode having an epi-layer thickness of 8 µm, which approaches 89% of the ideal value for a 1-dimensional (1-D) parallel plate structure).
문정현,방욱,강인호,김상철,Moon Geong Na,김남균 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.9
We investigated oxidized SiN gate oxides that have undergone post-oxidation annealing (POA)treatment using diluted O2 (10% O2 in N2) at 1100 C. The oxidized SiN/SiC interfaces were characterizedby using capacitance−voltage (C−V) measurements, Auger electron spectroscopy (AES),high-resolution transmission electron microscopy (HR-TEM), and X-ray photoelectron spectroscopy(XPS). POA for 60 min significantly improved the interface trap density (Dit), near-interface trapdensity (Nit), and effective oxide charge density (Qeff ) of the oxidized SiN. However, improvementwas not observed for the as-oxidized SiN sample or the oxidized SiN sample that had undergonePOA for 120 min. The electrical properties of metal−oxide semiconductor devices fabricated usingthese oxides are discussed in terms of the oxide chemical composition.
P형 우물 영역의 도핑 농도와 면적에 따른 4H-SiC 기반 DMOSFET 소자 구조의 최적화
안정준,방욱,김상철,김남균,정홍배,구상모,Ahn, Jung-Joon,Bahng, Wook,Kim, Sang-Chul,Kim, Nam-Kyun,Jung, Hong-Bae,Koo, Sang-Mo 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.7
In this work, a study is presented of the static characteristics of 4H-SiC DMOSFETs obtained by adjustment of the p-base region. The structure of this MOSFET was designed by the use of a device simulator (ATLAS, Silvaco.). The static characteristics of SiC DMOSFETs such as the blocking voltages, threshold voltages, on-resistances, and figures of merit were obtained as a function of variations in p-base doping concentration from $1\;{\times}\;10^{17}\;cm^{-3}$ to $5\;{\times}\;10^{17}\;cm^{-3}$ and doping depth from $0.5\;{\mu}m$ to $1.0\;{\mu}m$. It was found that the doping concentration and the depth of P-base region have a close relation with the blocking and threshold voltages. For that reason, silicon carbide DMOSFET structures with highly intensified blocking voltages with good figures of merit can be achieved by adjustment of the p-base depth and doping concentration.