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MOCVD 법에 의해 제조된 $CeO_2$ 버퍼층 증착 거동의 기판 의존성
전병혁,최준규,정우영,이희균,홍계원,김찬중,Jun, Byung-Hyu,Choi, Jun-Kyu,Jung, Woo-Young,Lee, Hee-Gyoun,Hong, Gye-Won,Kim, Chan-Joong 한국초전도학회 2006 Progress in superconductivity Vol.7 No.2
Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.
全炳赫,金成德 한밭대학교 산업과학기술연구소 1993 논문집 Vol.1 No.-
In this paper, we describe the electronic circuit design of a spectrophotometer which can measure the reflection, transmission and absorption of lighting in a sample material or the characteristics of an emitting device. The visible and ultraviolet light can be obtained from a Halogen lamp and a Deuterium lamp. In order to detect the insensity of the light generated by such light sources. Multi Channel Photodiode array Detector(MCPD) is used. The MCPD has good properties such as high speed of data translation, wide spectral response and many sampling data per unit time compared to the other commercial light detectors. Direct Memory Access(DMA) method adapted to this spectrophotometer can be designed to read as well as write serially data in the memory. The DMA can be serially and parallelly interfaced with a computer via RS232C. Moreover, it is designed a software to the given network system. The constructed spectrophotometer was calibrated by using SRM2009 and 2031 which are waveform calibrating materials in KRISS. After the performances for several samples was measured by the designed spectrophotometer, the results show good spectral resolution and responsibility.
기계적 밀링 및 글리세린 처리된 보론 분말을 사용하여 제조된 $MgB_2$의 임계전류밀도 향상
전병혁,김이정,김찬중,Jun, Byung-Hyuk,Kim, Yi-Jeong,Kim, Chan-Joong 한국초전도학회 2008 Progress in superconductivity Vol.10 No.1
A combined process of a mechanical ball milling and liquid glycerin ($C_{3}H_{8}O_3$) treatment of boron (B) powder has been conducted to enhance the superconducting properties of $MgB_2$. The individual aims of the mechanical milling and the glycerin treatment were to reduce the grain size of the $MgB_2$ and to achieve homogeneous carbon (C) incorporation into the $MgB_2$, respectively. Four kinds of B powders of as-received, glycerin treated, 2 h milled, and 2 h milled + glycerin treated were prepared. $MgB_2$ bulks were fabricated by in situ process using the prepared B powders. The mechanical ball milling was effective for a grain refinement, and a lattice disorder was easily achieved by glycerin addition. It was found that the critical current density ($J_c$) values were enhanced in the samples with milled B or glycerin treated B only. In the $MgB_2$ bulk prepared with both milled and glycerin treated B, the $J_c$ was further increased due to a higher grain boundary density and a greater C substitution.
MOCVD 법에 의해 제조된 YBCO 초전도 박막의 물성에 대한 완충층 템플릿의 영향
전병혁,최준규,김찬중,Jun, Byung-Hyuk,Choi, Jun-Kyu,Kim, Chan-Joong 한국초전도학회 2006 Progress in superconductivity Vol.8 No.1
[$YBa_2Cu_3O_{7-x}$] thin films were deposited on various buffered-templates by a metal organic chemical vapor deposition(MOCVD). Three different templates of $CeO_2/YSZ/CeO_2/pure-Ni(CYC),\;CeO_2/YSZ/Y_2O_3/Ni-3at.%W(YYC)$ and $CeO_2/IBAD-YSZ$/stainless steel were used. The Ni and Ni-W alloy tapes were biaxially textured by cold rolling and annealing heat treatment. The dense YBCO films were grown on both the IBAD and YYC templates with no microcrack, while the YBCO films on the CYC templates were grown with the formation of microcracks and NiO. The YBCO film on the YYC template showed the higher $I_c$ than that on CYC template. Especially, the IBAD templates with a thin $CeO_2$(type I) and thick $CeO_2$(type II) top layer were used to compare the deposition nature of the YBCO on them. Comparing the current property of the YBCO films on IBAD templates, the YBCO film deposited on thick $CeO_2$ layer was better than the film on thin $CeO_2$ layer.
RF PECVD법에 의해 증착된 TiN 박막의 조성, 구조 및 전기적 특성
전병혁,김종석,이원종,Jeon, Byeong-Hyeok,Kim, Jong-Seok,Lee, Won-Jong 한국재료학회 1995 한국재료학회지 Vol.5 No.5
Titanium nitride films were deposited on the (100) oriented-p-type silicon substrates of RF plasma enhanced chemical vapor depositiom\n using a gaseous mixutre of TiCl$_{4}$, N$_{2}$, H$_{2}$ and Ar. The chemincal composition, structure and the rsistivituy of the films were investigated with the deposition variables such as the flow rate ratio of N$_{2}$/TiCl$_{4}$, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N$_{2}$TiCl$_{4}$ and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N$_{2}$/TiCl$_{4}$ and depostion temperature increases within proper RF pwoer, the Cl concentartion in the films decreases and the stoichiometry and crystallingiy are improved, so decreases the resistivity of the films. The films depostied under the condition of the N$_{2}$/TiCl$_{4}$ ratio of 30, the RF power of 50W and the depostion temperature of 62$0^{\circ}C$ had the Cl content of 1.5at% and the resistivity of 56㏁cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6${\mu}{\textrm}{m}$$\times$0.6${\mu}{\textrm}{m}$.