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복정득,박예지,한인식,권혁민,박병석,박상욱,임민규,정의선,이정환,이희덕,Bok, Jung-Deuk,Park, Ye-Ji,Han, In-Shik,Kwon, Hyuk-Min,Park, Byoung-Seok,Park, Sang-Uk,Lim, Min-Gyu,Chung, Yi-Sun,Lee, Jung-Hwan,Lee, Hi-Deok 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.6
In this paper, we investigated the dependence of device performance and hot carrier lifetime on the channel direction of PMOSFET. $I_{D.sat}$ vs. $I_{Off}$ characteristic of PMOSFET with <100> channel direction is greater than that with <110> channel direction because carrier mobility of <100> channel direction is greater than that of <110> channel direction. However, hot carrier lifetime for <110> channel direction is much lower than that with <110> channel due to the greater impact ionization rate in the <100> channel direction. Therefore, concurrent consideration of reliability characteristics and device performance is necessary for channel strain engineering of MOSFETs.
La이 혼입된 고유전체/메탈 게이트가 적용된 나노 스케일 NMOSFET에서의 PBTI 신뢰성의 특성 분석
권혁민,한인식,박상욱,복정득,정의정,곽호영,권성규,장재형,고성용,이원묵,이희덕,Kwon, Hyuk-Min,Han, In-Shik,Park, Sang-Uk,Bok, Jung-Deuk,Jung, Yi-Jung,Kwak, Ho-Young,Kwon, Sung-Kyu,Jang, Jae-Hyung,Go, Sung-Yong,Lee, Weon-Mook,Lee, Hi-De 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3
In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.
Strained-Si PMOSFET에서 디지털 및 아날로그 성능의 캐리어 방향성에 대한 의존성
한인식(In-Shik Han),복정득(Jung-Deuk Bok),권혁민(Hyuk-Min Kwon),박상욱(Sang-Uk Park),정의정(Yi-Jung Jung),신홍식(Hong-Sik Shin),양승동(Seung-Dong Yang),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 大韓電子工學會 2010 電子工學會論文誌-SD (Semiconductor and devices) Vol.47 No.8
본 논문에서는 각각 다른 캐리어 방향성을 가지는 strained-silicon PMOSFET에서 소자의 디지털 및 아날로그 성능을 비교 평가 하였다. 캐리어 방향이 〈100〉을 갖는 소자의 경우 이동도 향상에 의해서 〈110〉방향의 소자 보다 우수한 드레인 구동 전류 및 출력저항 특성을 보이지만, NBTI 신뢰성과 소자의 matching 특성은 반대로 다소 열화 됨을 확인 하였다. 따라서 나노미터급 CMOSFET에서 캐리어 방향성을 이용한 이동도 향상 기술의 적용을 위해서는 DC 성능을 비롯한 신뢰성 및 아날로 그 특성을 모두 고려하는 것이 반드시 필요하다고 할 수 있다. In this paper, comparative analysis of digital and analog performances of strained-silicon PMOSFETs with different carrier direction were performed. ID.SAT vs. ID.OFF and output resistance, Rout performances of devices with 〈100〉 carrier direction were better than those of 〈110〉 direction due to the greater carrier mobility of 〈100〉 channel direction. However, on the contrary, NBTI reliability and device matching characteristics of device with 〈100〉 carrier direction were worse than those with 〈110〉 carrier direction. Therefore, simultaneous consideration of analog and reliability characteristics as well as DC device performance is highly necessary when developing mobility enhancement technology using the different carrier direction for nano-scale CMOSFETs.
N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석
오세경,신홍식,강민호,복정득,정의정,권혁민,이가원,이희덕,Oh, Se-Kyung,Shin, Hong-Sik,Kang, Min-Ho,Bok, Jeong-Deuk,Jung, Yi-Jung,Kwon, Hyuk-Min,Lee, Ga-Won,Lee, Hi-Deok 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.4
In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.