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김기홍,김홍기,정혁,김종성,손욱호,Kim, Gi-Hong,Kim, Hong-Gi,Jeong, Hyeok,Kim, Jong-Seong,Son, Uk-Ho 한국전자통신연구원 2007 전자통신동향분석 Vol.22 No.4
혼합현실 기술을 휴대가 용이한 모바일 기기상에서 효과적으로 구현하기 위해서는 기기에 부착된 카메라의 위치를 인식하는 기술을 시작으로 입력된 실세계 공간에 가상의 디지털 정보를 정합하고 표현하는 기술, 사용자가 표현된 혼합현실 환경과 현실감있게 상호작용하는 기술, 그리고 다양한 응용분야에 맞게 혼합현실 콘텐츠를 저작하는 기술에 이르기까지 여러 가지 세부 기술들이 요구된다. 본 논문에서는 언급한 세부 기술들에 대한 개요와 국내외적으로 진행되고 있는 관련 기술들의 동향을 구체적인 사례를 통해 소개한다.
A Study on the Fabrication of the Convex Structured MOSFET and Its Electrical Characteristics
김기홍,김현철,김흥식,안철,Kim, Gi-Hong,Kim, Hyun-Chul,Kim, Heung-Sik,An, Chul The Institute of Electronics and Information Engin 1992 전자공학회논문지-A Vol.29 No.8
To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.
김기홍,권세련,Kim, Ki-Hong,Kwon, Se-Ryun 한국어병학회 1998 한국어병학회지 Vol.11 No.1
The benedeniine monogenean Benedenia derzhabini (Layman, 1930) Meserve, 1938 from cultured Korean rockfish, Sebastes schlegeli, is described and reported for the first time in Korea. The parasite was recovered from the gills and inner wall of operculum. B. derzhavini is distinguished from B. seriolae and B. sebastodis by the relative shape and length between the accessory sclerites and the hamuli. Benedeniidae과에 속하는 단생흡충류인 Benededia derzhavini(Layman, 1930) Meserve, 1938가 양식 조피볼락의 아가미와 아가미 뚜껑 내벽에 기생하고 있음을 국내에서 처음으로 보고하며, 아울러 이 종의 형태학적 특징을 자세히 기술하였다. B. derzhayini는 B. seriolae 및 B. sebastodis 등의 종들과 accessory sclerite와 hamuli의 형태 및 상대적인 길이 비율 차이에 의해서 구별되었다.
표면조도 특성에 따른 저항 점 용접성 평가 및 너깃 형성 고찰
김기홍,최영민,김영석,임영목,유지훈,강남현,박영도,Kim, Ki-Hong,Choi, Yung-Min,Kim, Young-Seok,Rhym, Young-Mok,Yu, Ji-Hun,Kang, Nam-Hyun,Park, Yeong-Do 대한용접접합학회 2008 대한용접·접합학회지 Vol.26 No.5
With the increased use of surface textured steel sheet in body-in-white assembly, resistance spot weldability of these steels is considered to be an important subject. This study evaluated nugget formation and weldability by measuring dynamic resistance with various weld pressure, current, and weld time for steel sheet with two different surface roughnesses. The surface roughness for T-H steel ($R_{a}=1.70\;{\mu}m$) was higher than that for T-L steel ($R_{a}=1.33\;{\mu}m$), and resulted in increased contact resistance and heating for T-H steel spot welding. Therefore, at low weld current and weld cycle ranges, the T-H steel showed better weldability over the T-L steel. The evaluations of weld interface showed that the fusion zone in the T-H steel sheet was continuous in contrast to discontinuous fusion zone for T-L steel sheet at the same welding conditions. A comparison of dynamic resistance and tensile-shear strength (TSS) between T-H and T-L steel sheet suggested that high surface roughness provided larger heating at early cycle of welding and larger TSS.
자연 성장된 InAs/AlAs 양자점의 Photoreflectance 특성
김기홍,심준형,배인호,Kim, Ki-Hong,Sim, Jun-Hyoung,Bae, In-Ho 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.3
MBE법으로 성장된 InAs/AlAs 양자점(quantum dots; QD) 구조의 광학적 특성을 photoreflectance(PR) 이용하여 조사하였다. Wetting layer(WL) 두께에 따른 전체 장벽의 폭이 달라짐에 따라 GaAs 완충층 및 WL 신호의 세기가 변화되었다. QD 층이 식각된 시료의 상온 PR측정 결과로부터 $1.1{\sim}1.4\;eV$ 영역의 완만한 신호는 InAs QDs과 WL에 관련된 신호임을 알았다. 온도 $450{\sim}750^{\circ}C$범위에서 열처리 시켰을 때 WL층의 PR 신호가 red shift하였는데, 이는 열처리 후 InAs WL와 AlAs층 사이에 Al과 In의 내부 확산에 의해 양자점의 크기가 균일하게 재분포 되고, WL의 임계 두께가 증가하였음을 나타낸다. The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.
김기홍,최은석,지보영,Kim, Ki-Hong,Choi, Eun-Seok,Ji, Bo-Young 한국어병학회 1998 한국어병학회지 Vol.11 No.1
Distribution of a monogenean helminth Microcotyle sebastis on the gills of cultured Korean rockfish (Sebastes schlegeli) was investigated with regard to gill arches, sides of gill hemibranches (anterior or posterior), and their sections (dorsal, medial and ventral). M. sebastis has a significant preference for the second and third pair of gills, and shows marked affinity for anterior hemibranches of each gill branch, and medial sections of each gill hemibranch. The results suggest that the larger volume of water flows and surface area of the second and third pair of gills might affect the distribution of M. sebastis, and the concentrated distribution of M. sebastis on the anterior medial section of gills would be related with the increasing chances of mating by niche restriction. 양식 조피볼락에 기생하는 단생흡충류인 Microcotyle sebastis의 분포패턴을 아가미 새궁별, 새엽별(전방과 후방) 및 등면, 중앙면, 복면으로 구분하여 조사하였다. 조사 결과 M. sebastis는 제 2 및 제 3 새궁에 유의성 있는 선호도를 나타냈으며, 후방보다는 전방부의 새엽과 중앙 부위에서 집중적으로 발견되었다. 이러한 결과로 부터 각 아가미 새엽으로 들어오는 물의 양과 아가미의 표면적이 M. sebastis의 분포에 영향을 미칠 수 있는 것으로 여겨지며, 또한 전방 중앙부에 집중적으로 기생하는 원인은 미소서식처의 범위를 좁힘으로써 개체간의 접촉을 증가시기고, 이를 통해 교미의 효율을 높이기 위한 것으로 사료된다.
AlAs 에피층 위에 성장된 InAs 양자점의 Photoluminescence 특성연구
김기홍,심준형,배인호,Kim, Ki-Hong,Sim, Jun-Hyoung,Bae, In-Ho 한국재료학회 2009 한국재료학회지 Vol.19 No.7
The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.
근골격계 질환 예방에 관한 연구: 화물운전자를 중심으로
김기홍,정병현,Kim, Ki Hong,Chung, Byung Hyun 대한안전경영과학회 2021 대한안전경영과학회지 Vol.23 No.2
The possibility of developing musculoskeletal disorders increases with the length of service of the worker. Musculoskeletal disorders can occur when performing repetitive and forceful movements. Therefore, Cargo drivers operate repeatedly in the wrong posture for a long time. When loading and unloading a cargo, the cargo driver works repeatedly with force. Cargo operators are also exposed to musculoskeletal disorders in the working environment due to poor posture and repetitive movements. In this study, we are going to conduct a study on the level of awareness and prevention of the possibility of musculoskeletal disorders in cargo drivers for long periods of time. As a result of the study, the factors that cause musculoskeletal disorders in each group can occur during the long-term operation and preparation of drivers.
n-GaAs 구조에서의 ArF excimer laser annealing에 따른 Photoreflectance 특성 연구
김기홍,유재인,심준형,배인호,임진환,김진희,유재용,Kim, Ki-Hong,Yu, Jae-In,Sim, Jun-Hyoung,Bae, In-Ho,Lim, Jin-Hwan,Kim, Jin-Hi,Yu, Jae-Yong 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.2
n-GaAs의 시료를 furnace annealing 처리와 laser annealing 처리를 한 후, PR 방법으로 비교 조사하였다. 시료는 Furnace annealing을 5 분간 $400{\sim}800^{\circ}C$에서 처리한 시료와 ArF excimer laser($30{\sim}50\;W$)로 5 분간 Laser annealing 처리 한 시료로 준비하였다. Furnace로 annealing을 한 경우에 주 신호(정점)는 1.43 eV에서 관측되었는데 비해 laser로 annealing 한 샘플은 1.42 eV로 0.01 eV가 더 작게 관측되었다. 이는 laser annealing이 furnace annealing 보다 표면과 내면에서 일어나는 열처리 효과가 더 고르게 일어나가 때문이다. We investigated variation of the photoreflectance(PR) signals for n-GaAs furnace and laser annealed. The samples were annealed by using ArF excimer laser(5 min, $30{\sim}50\;W$) and furnace(5 min $400{\sim}700^{\circ}C$). The PR signals(top point) measured from the ArF excimer laser annealed sample showed 1.42 eV and furnace annealed sample showed 1.43 eV. This result is ArF excimer laser annealed sample was uniform annealed surface and inter state.