Revealing Joseon period People’s single nucleotide polymorphism associated with lactase gene by ancient DNA analysis of human remains from archaeological sites in Korea

Chang Seok Oh(Chang Seok Oh),Myeung Ju Kim(Myeung Ju Kim),Yi-Suk Kim(Yi-Suk Kim),Sori Min(Sori Min),Kyong Taek Oh(Kyong Taek Oh),Soong Deok Lee(Soong Deok Lee),Dong Hoon Shin(Dong Hoon Shin) 대한해부학회 2023 Anatomy & Cell Biology Vol.56 No.1

Lactase non-persistence (LNP), one of the causes of lactose intolerance, is related to lactase gene associated single nucleotide polymorphisms (SNPs). Since the frequency of LNP varies by ethnic group and country, the research to reveal the presence or absence of LNP for specific people has been conducted worldwide. However, in East Asia, the study of lactase gene associated SNPs have not been sufficiently examined so far using ancient human specimens from archaeological sites. In our study of Joseon period human remains (n=14), we successfully revealed genetic information of lactase gene associated SNPs (rs1679771596, rs41525747, rs4988236, rs4988235, rs41380347, rs869051967, rs145946881 and rs182549), further confirming that as for eight SNPs, the pre-modern Korean people had a lactase non-persistent genotype. Our report contributes to the establishment of LNP associated SNP analysis technique that can be useful in forthcoming studies on human bones and mummy samples from East Asian archaeological sites.

Solution-Processed Fabrication of Devices and Sensors with Surface Engineering of Nanocrystals

Soong Ju Oh 한국표면공학회 2018 한국표면공학회 학술발표회 초록집 Vol.2018 No.11

Designing Surface Chemistry of Silver Nanocrystals for Radio Frequency Circuit Applications

Oh, Hanju,Lee, Seung-Wook,Kim, Minsoo,Lee, Woo Seok,Seong, Mingi,Joh, Hyungmok,Allen, Mark G.,May, Gary S.,Bakir, Muhannad S.,Oh, Soong Ju American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.43

<P>We introduce solution-based, room temperature- and atmospheric pressure-processed silver nanocrystal (Ag NC)-based electrical circuits and interconnects for radio frequency (RF)/microwave frequency applications. We chemically designed the surface and interface states of Ag NC thin films to achieve high stability, dc and ac conductivity, and minimized RF loss through stepwise ligand exchange, shell coating, and surface cleaning. The chemical and structural properties of the circuits and interconnects affect the high-frequency electrical performance of Ag NC thin films, as confirmed by high-frequency electromagnetic field simulations. An all solution-based process is developed to build coplanar structures, in which Ag NC thin films are positioned at both sides of the substrates. In addition, we fabricated flexible transmission lines and broadband electrical circuits for resistors, interdigitated capacitors, spiral and omega-shaped inductors, and patch antennas with maximum inductance and capacitance values of 3 nH and 2.5 pF at frequencies up to 20 GHz. We believe that our approach will lead to a cost-effective realization of RF circuits and devices in which sensing and wireless communication capabilities are combined for internet-of-things applications.</P> [FIG OMISSION]</BR>

미세전산화단층촬영술을 이용한 불소바니쉬의 재광화 및 내산성 평가

오한나 ( Han Na Oh ),정성숙 ( Seong Soong Jeong ),이혜진 ( Hye Jin Lee ),윤혜정 ( Hye Jeong Youn ),정은주 ( Eun Ju Jung ),하명옥 ( Myung Ok Ha ) 한국치위생학회 2010 한국치위생학회지 Vol.10 No.5

Designing a nanocrystal-based temperature and strain multi-sensor with one-step inkjet printing

( Junsung Bang ),( Junhyuk Ahn ),( Soong Ju Oh ) 한국센서학회 2021 센서학회지 Vol.30 No.4

Wearable multi-sensors based on nanocrystals have attracted significant attention, and studies on patterning technology to implement such multi-sensors are underway. Conventional patterning processes may affect material properties based on high temperatures and harsh chemical conditions. In this study, we developed an inkjet printing technique that can overcome these drawbacks through the application of patterning processes at room temperature and atmospheric pressure. Nanocrystal-based ink is used to adjust properties efficiently. Additionally, the viscosity and surface tension of the solvents are investigated and optimized to increase patterning performance. In the patterning process, the electrical, electrothermal, and electromechanical properties of the nanocrystal pattern are controlled by the ligand exchange process. Experimental results demonstrate that a multi-sensor with a temperature coefficient of resistance of 3.82 × 10^-3 K^-1 and gauge factor of 30.6 can be successfully fabricated using one-step inkjet printing.

Flexible NiO nanocrystal-based resistive memory device fabricated by lowtemperature solution-process

Hye-Won Yun,Ho Kun Woo,Soong Ju Oh,Sung-Hoon Hong 한국물리학회 2020 Current Applied Physics Vol.20 No.2

In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.

Trioctylphosphine-assisted morphology control of ZnO nanoparticles

Hong, Yun-Kun,Cho, GeonHee,Park, YoonSu,Oh, Soong Ju,Ha, Don-Hyung IOP 2018 Nanotechnology Vol.29 No.22

<P>This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM?=?2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.</P>

조선시대 유자광 묘 여부 논란이 있는 남원 영광 류씨 선산 내 회곽묘 출토 인골에 대한 인류학적 조사

김이석(Yi-Suk Kim),오창석(Chang Seok Oh),이상섭(Sang-Seob Lee),김명주(Myeung Ju Kim),이숭덕(Soong Deok Lee),신명호(Myung Ho Shin),김우림(Woo Lim Kim),신동훈(Dong Hoon Shin) 대한체질인류학회 2011 해부·생물인류학 (Anat Biol Anthropol) Vol.24 No.2

조선시대의 기록에 의하면 유자광(1439~1512)은 사망 후 부관참시를 염려하여 자신의 묘에 봉분을 하지 않고 감추어 두도록 유언을 하였다고 한다. 이 후 유자광의 묘는 실전(失傳) 되어 해당 기록처럼 문중 묘역 내 어딘가에 유자광의 묘가 실재할 가능성이 계속 제기되었다. 1974년 남원의 영광 류씨 문중 묘역 공사 중 발견된 무덤에서는 잘 보존된 사람 뼈가 발견되었는데 해당 무덤이 실전 된 유자광의 평토한 무덤일지도 모른다는 주장이 향토사학계를 중심으로 제기되었다. 이에 본 연구진은 유자광 인골 여부를 확인하기 위하여 해당묘에 수습된 인골에 대한 인류학적 조사를 수행하였다. 무덤에서 나온 남성 피장자는 신장이 160.5±3.8 cm로 추정되며 아래턱 왼쪽 송곳니의 박리 절편을 제작하여 피장자 연령을 계산한 결과 58.6±5.2세 정도로 추정되었다. 아래턱 두 개 치아에서는 고도의 치아우식증(dental caries)이 확인되었고 아래턱 이틀뼈 일부에서 치주농양의 존재를 시사하는 고도의 골 소실이 관찰되었다. 피장자는 척추를 비롯한 여러 뼈에서 사망 전 미만성 특발성 골격성 과골화증(Diffuse idiopathic skeletal hyperostosis, DISH)를 앓고 있었던 것 같은 소견이 확인되었으므로 생전 영양상태가 좋았던 것으로 생각된다. 피장자에 대한 유전학적 검사에서는 증폭가능한 핵 DNA가 Quantifiler analysis 결과 확인되지 않아 피장자가 영광 류씨 집안의 사람인지 Y 염색체 분석에 의해 확인하는 것이 불가능하다고 판단하였다. 방사선연대측정의 결과, 피장자는 지금으로부터 730±50년 전에 생존하였던 것으로 추정되었다. 전체적으로 보아 수집된 몇 가지 자료가 유자광에 대한 역사적 기록과 일치하지 않으므로 해당 인골 신원에 대해 긍정적인 평가를 내리기 어렵다. 다만 앞으로 우리나라에서 시행될 역사적 인물에 대한 유사한 인류학적 사례에 대한 기초적인 선구적 자료로서 본 연구가 갖는 의미를 평가할 수 있겠다. Anthropological study on human skeletons from Joseon tomb, for confirming Ryu Ja-Gwang, a famous historical figure of medieval Korea. Ryu Ja-Gwang (??子光) was the famous figure of Joseon Dynasty who achieved great successes in royal court. According to the records in Joseon Dynasty, he tried to hide his own tomb after death under the apprehension that the political enemies might do harm to his corpse. In 1974, the descendants of Younggwang Ryu clan discovered a Joseon tomb that was lost for the past several hundred years. Since they suspected if the tomb might be their legendary ancestor’s, anthropological studies were asked to be done on the skeletons collected from the tomb. In our study, the estimated stature of a male from the tomb was 160.5±3.8 cm. The age at death was estimated to be 58.6±5.2. He seems to have been suffered from diffuse idiopathic skeletal hyperostosis (DISH), the disease prevalent among the people taking high-caloric diets. Since nuclear DNA could not be amplified in this case, the personal identification of the dead person could not be successfully traced by molecular techniques. Taken together, we could not conclude that the skeletons were those of Ryu Ja-Gwang because the radiocarbon dating, age at death or height data could not be well matched with those described in historical documents. Even so, this study could be significant to the related researchers because it was one of the first trials to identify debatable historical figure using various anthropological techniques. Considering that the anthropological studies on famous historical people have been performed briskly, our study could be the basis for the similar studies in Korea, performed in near future.

Graphene p–n Vertical Tunneling Diodes

Kim, Sung,Shin, Dong Hee,Kim, Chang Oh,Kang, Soo Seok,Kim, Jong Min,Jang, Chan Wook,Joo, Soong Sin,Lee, Jae Sung,Kim, Ju Hwan,Choi, Suk-Ho,Hwang, Euyheon American Chemical Society 2013 ACS NANO Vol.7 No.6

<P>Formation and characterization of graphene p–n junctions are of particular interest because the p–n junctions are used in a wide variety of electronic/photonic systems as building blocks. Graphene p–n junctions have been previously formed by using several techniques, but most of the studies are based on lateral-type p–n junctions, showing no rectification behaviors. Here, we report a new type of graphene p–n junction. We first fabricate and characterize vertical-type graphene p–n junctions with two terminals. One of the most important characteristics of the vertical junctions is the asymmetric rectifying behavior showing an on/off ratio of ∼10<SUP>3</SUP> under bias voltages below ±10 V without gating at higher n doping concentrations, which may be useful for practical device applications. In contrast, at lower n doping concentrations, the p–n junctions are ohmic, consistent with the Klein-tunneling effect. The observed rectification results possibly from the formation of strongly corrugated insulating or semiconducting interlayers between the metallic p- and n-graphene sheets at higher n doping concentrations, which is actually a structure like a metal–insulator–metal or metal–semiconductor–metal tunneling diode. The properties of the diodes are almost invariant even 6 months after fabrication.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2013/ancac3.2013.7.issue-6/nn400899v/production/images/medium/nn-2013-00899v_0001.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn400899v'>ACS Electronic Supporting Info</A></P>

Exploiting the colloidal nanocrystal library to construct electronic devices

Choi, Ji-Hyuk,Wang, Han,Oh, Soong Ju,Paik, Taejong,Sung, Pil,Sung, Jinwoo,Ye, Xingchen,Zhao, Tianshuo,Diroll, Benjamin T.,Murray, Christopher B.,Kagan, Cherie R. American Association for the Advancement of Scienc 2016 Science Vol.352 No.6282

<P>Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmiumselenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.</P>