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Tien, Nguyen Thanh,Seol, Young Gug,Dao, Le Huynh Anh,Noh, Hwa Young,Lee, Nae-Eung WILEY-VCH Verlag 2009 Advanced Materials Vol.21 No.8
<B>Graphic Abstract</B> <P>Highly crystalline P(VDF-TrFE) materials have a large remnant polarization that causes the I<SUB>D</SUB>–V<SUB>D</SUB> curves to have no current saturation in the region where they normally would. This high crystallinity also results in a positive pyroelectricity, which is different from the conventional low response and nonlinear negative pyroelectricity. <img src='wiley_img/09359648-2009-21-8-ADMA200801831-content.gif' alt='wiley_img/09359648-2009-21-8-ADMA200801831-content'> </P>
Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs
Seonghyun Jin,Tae-Woong Kim,Young-Gug Seol,Mativenga, Mallory,Jin Jang IEEE 2014 IEEE electron device letters Vol.35 No.5
<P>We report an abnormal negative threshold-voltage shift (ΔVTH) in bulk-accumulation (dual-gate driven) amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) after application of positive-bias-stress (PBS). In devices annealed at 250°C for 2 h in vacuum, the negative ΔVTH is accompanied with subthreshold swing degradation, consistent with PBS-induced defect creation. Negative-bias-stress induces negligible ΔVTH, ruling out ion migration in the gate-insulator. By varying the top-gate length, it is found that the negligible ΔVTH is a function of bulk-accumulation. However, after vacuum annealing at 250°C for 100 h, PBS induces negligible ΔVTH, verifying that the negative ΔVTH in short-time annealed devices is related to defects in the bulk a-IGZO. Therefore, good PBS stability can be achieved in bulk-accumulation dual-gate a-IGZO TFTs by long-time vacuum anneal.</P>
Evaluation of nanocomposite gate insulators for flexible organic thin-film transistors.
Kim, Jin Soo,Cho, Sung Won,Kim, Ii,Hwang, Byeong Ung,Seol, Young Gug,Kim, Tae Woong,Lee, Nae-Eung American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.11
<P>To develop physically flexible electronics, high performance and mechanical stability of component materials and devices are required. For a flexible display, a backplane with flexible thin-film transistors (TFTs) must be developed. Gate insulating materials with excellent electrical and mechanical properties are highly important to the development of flexible TFTs. We investigated nanocomposite gate dielectrics composed of polyimide (PI) because of their superior thermal stability, as well as different inorganic HfO2, TiO2, and Al2O3 nanoparticles with high dielectric constants. Nanocomposite gate dielectrics of HfO2 nanoparticles and PI lowered leakage current density and increased the relative dielectric constant compared to PI solely because of a high degree of dispersion. Pentacene TFTs with HfO2 nanocomposite gate insulators also showed higher field-effect mobility (μ), smaller subthreshold swing, and an enhanced on/off current ratio (I(on/off)) compared to those of the PI gate dielectric. In addition, mechanical cyclic bending tests involving bending cycles of 2 x 10(5) time sat a bending radius of 5 mm showed improvement in electrical stability of nanocomposite gate insulators with a change in leakage current density of nanocomposite gate insulators below 30%.</P>
유연성 유기물 transistor를 제작을 위한 고유전 박막 위에서의 Pentacene의 특성
이순우,이상설,박정호,박인성,설영국,이내응,안진호,Lee Sun-Woo,Lee Sang-Seol,Park Jung-Ho,Park In-Sung,Seol Young-Gug,Lee Nae-Eung,Ahn Jin-Ho 한국마이크로전자및패키징학회 2006 마이크로전자 및 패키징학회지 Vol.13 No.2
본 연구는 OTS 표면 처리 유무에 따른 $HfO_2$ 위에서의 pentacene의 grain growth를 비교 연구하였다. OTS 처리에 의해 $HfO_2$의 표면은 hydrophilic에서 hydrophobic으로 변화되었으며, pentacene의 grain size는 50 nm 에서 90 nm으로 증가되었다. 이러한 pentacene의 크기 증가와 더불어 pentacene은 3-dimensional island 구조를 가지며, bulk phase 없이 thin film phase만의 출현으로 인해 OTS/$HfO_2$ 박막 위에서 pentacene은 보다 방향성을 가지며 정렬되었다. We reported the grain growth of pentacone on $HfO_2$ film depending on OTS treatment. The hydrophilic $HfO_2$ thin film was changed into hydrophobic with less interface energy by OTS treatment. The grain size of pentacene on OTS/$HfO_2$ film was increased from 50 nm to 90 nm with the variation of surface energy and the structure was maintained 3-dimensional island structure. Pentacene on OTS/$HfO_2$ surface was directionally arrayed due to appearance of the only thin film phase without bulk phase by OTS treatment.
Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation
Xiuling Li,Billah, Mohammad Masum,Mativenga, Mallory,Di Geng,Yong-Hwan Kim,Tae-Woong Kim,Young-Gug Seol,Jin Jang IEEE 2015 IEEE electron device letters Vol.36 No.8
<P>We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.</P>