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고용득,송재호,장일영,이승원 金烏工科大學校 1996 論文集 Vol.17 No.-
The purpose of this experimental study was carried out for the estimate of the properties of underwater non-segregation concrete. Properties of antiwashout underwater concrete is different from other type of concrete and the selection of cement types is greatly dependent on the structural requirement and construction location associated with control compressive strength and modulus of rupture Based on this, this study addresses the comparison of physical properties of concrete according to the use of different cement types. It is also recommended to select a proper cement type depending ton structural characteristics. Rational analytic formula for the modulus of rupture is to predicted from compressive strength of concrete cylinder.
장일영,고용득,윤영수 金烏工科大學校 1996 論文集 Vol.17 No.-
An experimented study was carried out for the estimate of the bond strength property of underwater non-segregation concrete. The action of bond force and slip are affected by various factors. Bond is made up of three components of chemical adhesion and friction, mechanical interaction between concrete and steel. But properties of underwater non-segregation concrete is different from other type of concrete. This study addresses the comparison of physical properties of concrete according to the use of different cement types. It is also recommended to select a proper cement type depending on structural characteristics. Rational analytic formula for the modulus of rupture and bond stress are to be predicted from compressive strength of concrete.
Yong Deuk Ko,Hui-Gon Chun,Jinhan Choi 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
As the design rule of DRAM device decreases to less than 100 nm and the aspect ratio between gate electrode and space increases dramatically (3.5~ 4), it is coming difficult to fill the spaces with insulating materials. It is also becoming more preferable to reduce the thickness of poly-Si rather than to reduce WSix film because of reducing electrical resistivity. To meet these requirements, highly selective and anisotropic etching for WSix/poly-Si has been developed by fully utilizing a high density plasma source. In this study, O₂ and N₂ gases were added to achieve high selectivity in NF₃/Cl₂ gas process. The addition of O₂ increases WSix etch rate by forming W-oxyhalides and passivates poly-Si by forming Si-O layer. On the other hand, the addition of N₂ gas decreases both poly-Si and WSix, but it forms a sidewall protection layer (WN) on WSix, achieving an isotropic etching. The role of cathode temperature was found to not only increase WSix etch rate and the WSix /poly-Si selectivity but also provides a wider process margin for the production environment. As the design rule of DRAM device decreases to less than 100 nm and the aspect ratio between gate electrode and space increases dramatically (3.5~ 4), it is coming difficult to fill the spaces with insulating materials. It is also becoming more preferable to reduce the thickness of poly-Si rather than to reduce WSix film because of reducing electrical resistivity. To meet these requirements, highly selective and anisotropic etching for WSix/poly-Si has been developed by fully utilizing a high density plasma source. In this study, O₂ and N₂ gases were added to achieve high selectivity in NF₃/Cl₂ gas process. The addition of O₂ increases WSix etch rate by forming W-oxyhalides and passivates poly-Si by forming Si-O layer. On the other hand, the addition of N₂ gas decreases both poly-Si and WSix, but it forms a sidewall protection layer (WN) on WSix, achieving an isotropic etching. The role of cathode temperature was found to not only increase WSix etch rate and the WSix /poly-Si selectivity but also provides a wider process margin for the production environment.
SF6와 SF6-N2 가스를 이용한 텅스텐 박막의 플라즈마 식각에 관한 연구
고용득,천희곤,조동율,정광진,최성호,구경완 한국센서학회 1999 센서학회지 Vol.8 No.3
The plasma etching of tungsten thin films has been studied with SF_6 gas in RIE system. The etch rate of a - phase W film with SF_6 gas plasma has been showed to depend strongly on process parameters (SF_6, SF_6-N₂ gas). Effect of Nz addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after SF_6-N₂ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.