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Development of an Extended Arc Plasma Source for Low-Pressure Surface Treatment
Vadim Yu. Plaksin,이현주,임찬주,고민국 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
This study investigated the process of silicon etching by using a high durability plasmatron with the aim of increasing the size of the plasma jet for the treatment of wider wafer surfaces Different types of plasmatron nozzles and plasma reflectors were tested. By using a two-plasmatron configuration, we succeeded in increasing the size of the etched spot by ve to ten times the size achieved using a single plasmatron. The etch rates of silicon with CF4 and O2 were 8 - 23 μm/min. By using a magnetic field the plasma ow can be intensified and declined. This allows using magnetically-controlled surface scanning for etching processes. This study investigated the process of silicon etching by using a high durability plasmatron with the aim of increasing the size of the plasma jet for the treatment of wider wafer surfaces Different types of plasmatron nozzles and plasma reflectors were tested. By using a two-plasmatron configuration, we succeeded in increasing the size of the etched spot by ve to ten times the size achieved using a single plasmatron. The etch rates of silicon with CF4 and O2 were 8 - 23 μm/min. By using a magnetic field the plasma ow can be intensified and declined. This allows using magnetically-controlled surface scanning for etching processes.
Etching of Silicon Substrates by Using a Plasmatron
Vadim Yu. Plaksin,Heon-Ju Lee,Chi Kyu Choi,Sang Beom Joa 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
An application of an arc plasma source with a low anode erosion rate allowing it to generate a nearly spectrally clean plasma flow at a lifetime of 10$^3$ $\sim$ 10$^4$ hours is proposed as a tool for plasma-chemical surface treatment. As an example, an etching process for mono-crystal silicon in a CF$_4$ plasma and for a photo-resist (PR) on a silicon wafer in an air plasma at pressures about 10$^0$ mbar were demonstrated. A macroprobe current was used as an indicator of the generated plasma activity. The dependences of the mentioned current and PR etch rate on the processing conditions are discussed and can help to assess the optimal conditions for the etching process before the wafer etching experiment.
Deposition of ZnO Films on an Acryl Substrate Using a DC Arc Plasmatron
Oleksiy V. Penkov,Vadim Yu. Plaksin,Min Gook Ko,Chanjoo Yim,이현주 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The DC arc plasmatron deposition of ZnO films on acryl substrates was demonstrated. The structure and the optical properties of the films were investigated. The XRD measurements revealed that the crystalline structure of the films depended on the deposition pressure. At atmospheric pressure, the deposited films were amorphous, and decreasing pressure led to the formation of polycrystalline films. The optical transmittance of the films was around 90 % in the visible region. We showed that minimal substrate heating could be achieved by varying the deposition parameters.
Application of the DBD in the Cleaning of Diesel Engine Exhausts
이현주,Oleksiy V. Penkov,Vadim Yu. Plaksin 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Various dielectric barrier discharge (DBD) plasma sources were used to reduce the NOx content of diesel engine exhaust. Discharge frequencies were varyied from 400 Hz to 28.5 kHz. Soot filters were used to control the effect of the discharge on the particle content in the engine emissions. A 95 % decrease in NO and a 70 % reduction in NOx were obtained. We found that the application of a discharge increased the efficiency of carbon-particle removal by 1.4 times. Various dielectric barrier discharge (DBD) plasma sources were used to reduce the NOx content of diesel engine exhaust. Discharge frequencies were varyied from 400 Hz to 28.5 kHz. Soot filters were used to control the effect of the discharge on the particle content in the engine emissions. A 95 % decrease in NO and a 70 % reduction in NOx were obtained. We found that the application of a discharge increased the efficiency of carbon-particle removal by 1.4 times.
Self-sustained reformation of diesel fuel using a SiC block with penetrating walls
Ko, Min Kook,Plaksin, Vadim Yu.,Kim, Ji Hun,Mansur, Rakib M.,Yun, Eun Young,Mok, Young Son,Lee, Heon Ju John Wiley Sons, Ltd. 2010 International journal of energy research Vol.34 No.5
<P>Reformation of diesel fuel was performed using a silicon carbide (SiC) block with penetrating walls. The atomized fuel was spray injected to the electrically heated block. The fuel–air mixture was reformed by partial oxidation and changed to synthesis gas including CO, CO<SUB>2</SUB>, H<SUB>2</SUB>O, O<SUB>2</SUB> and H<SUB>2</SUB>. The composition of the reformed gas was measured with varying fuel–air ratios. The degree of reformation or conversion changes with the temperature and a maximum conversion efficiency of ∼90% is attained at around 850°C. Copyright © 2009 John Wiley & Sons, Ltd.</P>