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Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
Moongyu Jang,Yarkyeon Kim,Myungsim Jun,Cheljong Choi,Taeyoub Kim,Byoungchul Park,Seongjae Lee 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.1
Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20μm to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed 550μA/um saturation current at VGS-VT = VDS = 2V condition (Tox = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.
Kim, Jaehyeon,Hyun, Younghoon,Park, Youngsam,Choi, Wonchul,Kim, Soojung,Jeon, Hyojin,Zyung, Taehyeong,Jang, Moongyu American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>A silicon nanowire one-dimensional thermoelectric device is presented as a solution to enhance thermoelectric performance. A top-down process is adopted for the definition of 50 nm silicon nanowires (SiNWs) and the fabrication of the nano-structured thermoelectric devices on silicon on insulator (SOl) wafer. To measure the Seebeck coefficients of 50 nm width n- and p-type SiNWs, a thermoelectric test structure, containing SiNWs, micro-heaters and temperature sensors is fabricated. Doping concentration is 1.0 x 10(20) cm(-3) for both for n- and p-type SiNWs. To determine the temperature gradient, a temperature coefficient of resistance (TCR) analysis is done and the extracted TCR value is 1750-1800 PPM x K(-1). The measured Seebeck coefficients are -127.583 microV x K(-1) and 141.758 microV x K(-1) for n- and p-type SiNWs, respectively, at room temperature. Consequently, power factor values are 1.46 mW x m(-1) x K(-2) and 1.66 mW x m(-1) x K(-2) for n- and p-type SiNWs, respectively. Our results indicate that SiNWs based thermoelectric devices have a great potential for applications in future energy conversion systems.</P>
Kim, Eunhye,Ahn, Hyungju,Park, Sungmin,Lee, Hoyeon,Lee, Moongyu,Lee, Sumi,Kim, Taewoo,Kwak, Eun-Ae,Lee, Jun Han,Lei, Xie,Huh, June,Bang, Joona,Lee, Byeongdu,Ryu, Du Yeol American Chemical Society 2013 ACS NANO Vol.7 No.3
<P>The directed assembly of block copolymer nanostructures with large periods exceeding 100 nm remains challenging because the translational ordering of long-chained block copolymer is hindered by its very low chain mobility. Using a solvent-vapor annealing process with a neutral solvent, which was sequentially combined with a thermal annealing process, we demonstrate the rapid evolution of a perpendicularly oriented lamellar morphology in high molecular weight block copolymer films on neutral substrate. The synergy with the topographically patterned substrate facilitated unidirectionally structural development of ultrahigh molecular weight block copolymer thin filmseven for the structures with a large period of 200 nmleading to perfectly guided, parallel, and highly ordered line-arrays of perpendicularly oriented lamellae in the trenched confinement. This breakthrough strategy, which is applicable to nanolithographic pattern transfer to target substrates, can be a simple and efficient route to satisfy the demand for block copolymer assemblies with larger feature sizes on hundreds of nanometers scale.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2013/ancac3.2013.7.issue-3/nn3051264/production/images/medium/nn-2012-051264_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn3051264'>ACS Electronic Supporting Info</A></P>
Gossiping Route Protocol을 이용한 공기오염감지시스템에 관한 연구
박용만(YongMan Park),김희식(Hiesik Kim),김규식(GyuSik Kim),이문규(MoonGyu Lee),오드게렐(Odgerel Ayurzana),권종원(JongWon Kwon),구상준(SangJun Koo),오시환(ShiHwan Oh),김동기(DongKi Kim),조익균(IkKyun Jo),박정훈(JeongHun Park) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.10
Wireless Sensor Networking is state of the art technology that has a wide range of potential applications. Sensor network generally consists of a large number of distributed nodes that organize themselves into a multi-hop wireless network. Each node has one or more sensors, embedded processors and low-power radios, and is normally battery operated because of small size. In this paper wireless sensor networking technology applies to the environment monitoring system in the underground. This system can monitor a pollution level of the underground in realtime for keeping up a comfortable environment.