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New fabrication process of silicon quantum dots using external laser irradiation
Jung Yup Yang,Jin Pyo Hong,Chae Ok Kim,Eun Kyu Kim,Hyun Jung Kim,Kap Soo Yoon,Seong Ki Min,Si Ok Shon,Young Ho Do,Young Ju Park 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
We present an ecient technique for the formation of silicon quantum dots (Si QDs) by exposing a Nd: YAG laser (wavelength = 355 nm) onto amorphous Si lm. Primary emphasis is placed on the simple and direct fabrication of the Si QDs without performing any micro or nano-patterning process. The scanned laser irradiation of low power causes localized segregation of as-deposited lm by the laser-induced heat, resulting in the fabrication of Si QDs. Observations in scanning electron microscope and atomic force microscope system clearly conrm highly uniform and controllable nanoscale Si QDs in our case. The average size and density of the Si QDs were about 4 nm and 1.5 1012/cm2, respectively. In addition, optical and electrical properties of the Si QDs were investigated by photoluminescence and C-V measurements. The experimental results suggest that our new process can lead to very stable optical and electrical devices, with well controllable and reproducible Si QDs.
Jung Yup Yang,Jin Pyo Hong,Chae Ok Kim,Hyun Jung Kim,Kap Soo Yoon,Seong Ki Min,Si Ok Sohn,Young Ho Do 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
Magnetic properties of randomly oriented ferromagnetic cobalt nano dots were investigated as a function of dot diameter. Polycrystalline Co thin lm of 1 3 nm was at rst grown on Si substrate by a magnetron sputtering method and then followed by an ultraviolet laser exposure on as-grown Co thin lm in order to produce Co nano dots with dierent diameters. The Co dot size, density, and spacing (distance between dot and nearby dots) was intentionally controlled by initial deposition thickness under optimum laser conditions. Magnetic hysteresis and angle-dependent magnetization of Co nano dots were measured with superconducting quantum interference devices, a vibrating sample magnetometer and magnetic force microscopy. The observed results demonstrate that the coercivity, hysteresis loops, reversal mechanism and anisotropy properties were strongly in uenced by the exchange interaction with neighboring ferromagnetic nano dots.
Jung Yup Yang,Kap Soo Yoon,Won Joon Choi,Young Ho Do,Ju Hyung Kim,Chae Ok Kim,Jin Pyo Hong 한국물리학회 2007 Current Applied Physics Vol.7 No.2
Metaloxidesemiconductor structures (MOS) with the embedded Co nanoparticles (NPs) were eciently fabricated by utilizing anexternal laser irradiation technique for the application of nonvolatile memory. Images of high resolution transmission electron micros-copy measurements exhibited that the Co NPs of 5 nm in diameter were clearly embedded in SiO2 gate oxide. Capacitancevoltage mea-surements certainly exhibited at-band voltage shift of 2.2 V from 2 V to. capacitors with the embedded Co NPs were also studied as a function of tunnel oxide thickness to conrm the suitability of nonvolatilememory devices with metal NPs. The experimental results reveal that our unique laser process will give possible promise for experimentalecient formation or insertion of metal NPs inside the gate oxide.