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InAs 양자점의 광학적 성질에 미치는 초격자층의 영향
정연길,최현광,박유미,황숙현,윤진주,이제원,임재영,전민현,Jeong Yonkil,Choi Hyonkwang,Park Yumi,Hwang Sukhyon,Yoon Jin-Joo,Lee Jewon,Leem Jae-Young,Jeon Minhyon 한국재료학회 2004 한국재료학회지 Vol.14 No.2
We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.