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Structural and Optical Properties of InAlAs Graded Buffers on GaAs (001) for Unipolar Devices
최현광,조중석,전민현,Minhyon Jeon,정연길 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.2
We investigate the structural and the optical properties of InAlAs step graded buffers (SGBs) grown on GaAs (001). Metamorphic InAlAs SGBs layers with various indium contents are grown on semi-insulating GaAs (001) substrates by means of molecular beam epitaxy. We change various growth parameters, such as the step number, the step thickness and the total SGB thickness, to optimize the graded buffer for unipolar device applications. The samples are characterized using atomic force microscopy, X-ray diffraction and photoluminescence (PL). Metamorphic InAlAs SGBs above intermediate contents reveal effectiveness for strain relaxation of the metamorphic InAlAs layers; it should be noted that the transport properties of unipolar devices are rather sensitive to the strain. The strain and the mosaicity variations of the metamorphic InAlAs layers depend on the total SGB thickness and the thickness of each step. The PL emissions of the metamorphic InAlAs layers with intermediate contents can support a mechanism for an alloy-hardening gradient.
Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors
문주호,김동주,정선호,Jooho Moon,Chiyoung Park,Minhyon Jeon,Won-Chol Sin,Jinha Jung,Hyun-Jung Woo,Seung-Hyun Kim,Jowoong Ha 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance. We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.