AlN Epitaxial Film Growth Using MOCVD For a GHz-band FBAR

Chung-Mo Yang,Seong-Kweon Kim 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3

We present the fabrication of a film-bulk-acoustic resonator (FBAR) with a highly c-axis- oriented AlN film on Mo/SiO2/Si (100) by using metal-organic chemical-vapor deposition (MOCVD). The resonant frequency and the anti-resonant frequency of the fabricated resonator were 3.219 GHz and 3.249 GHz, respectively. The quality factor and the effective electromechanical coupling coefficient (k2 eff ) were 24.7 and 2.65%, respectively. The conditions of AlN deposition were a substrate temperature of 950℃, a pressure of 20 Torr, and a V-III ratio of 25000. We successfully grew highly c-axis-oriented AlN film with 4 × 10−5 Ωcm resistivity for the Mo bottom electrode. The full widths at half maximum (FWHM) for the AlN (0002) deposited on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4˚ and 3.8˚, respectively. The FWHM value of the deposited AlN film meets the RF band-pass-filter specification for a GHz-band wireless local area network. We present the fabrication of a film-bulk-acoustic resonator (FBAR) with a highly c-axis- oriented AlN film on Mo/SiO2/Si (100) by using metal-organic chemical-vapor deposition (MOCVD). The resonant frequency and the anti-resonant frequency of the fabricated resonator were 3.219 GHz and 3.249 GHz, respectively. The quality factor and the effective electromechanical coupling coefficient (k2 eff ) were 24.7 and 2.65%, respectively. The conditions of AlN deposition were a substrate temperature of 950℃, a pressure of 20 Torr, and a V-III ratio of 25000. We successfully grew highly c-axis-oriented AlN film with 4 × 10−5 Ωcm resistivity for the Mo bottom electrode. The full widths at half maximum (FWHM) for the AlN (0002) deposited on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4˚ and 3.8˚, respectively. The FWHM value of the deposited AlN film meets the RF band-pass-filter specification for a GHz-band wireless local area network.

Mo/SiO₂/Si(100)기판 위에 MOCVD법으로 성장시킨 AIN박막이용 GHz대역의 FBAR제작에 관한 연구

양충모,김성권,차재상,박구만,Yang, Chung-Mo,Kim, Seong-Kweon,Cha, Jae-Sang,Park, Ku-Man 한국조명전기설비학회 2006 조명·전기설비학회논문지 Vol.20 No.4

본 논문에서는 $Mo/SiO_2/Si(100)$ 기판 위에 MOCVD(Metal-Organic-Chemical-Vapor Deposition)법을 이용하여 C축 방향으로 성장시킨 AIN(Aluminum Nitride) 박막을 이용하여 GHz대역 무선 통신에서 사용할 수 있는 FBAR(Film-Bulk-Acoustic Resonator)을 제작하였다. 제작된 공진부의 공진주파수와 반공진주파수는 각각 3.189[GHz]와 3.224[GHz]으로 측정되었으며, Q값(Quality Factor)과 유효한 전기기계 결합계수(${k_{eff}}^2$)는 각각 24.7과 2.65[%]로 평가되었다. AIN의 증착(Deposition) 조건은 $950[^{\circ}C]$의 기판표면(Substrate) 온도, 20Torr의 압력, 25000의 N/Al의 V/III비로 증착하였다. $4{\times}10^{-5}[\Omega{cm}]$의 Mo 하부전극 고유저항과 $Mo/SiO_2/Si(100)$ 기판 위에 AIN(0002) FWHM(Full-Width at Half-Maximum) 4를 갖는 C축 방향성의 AIN 박막을 성공적으로 성장시켰다. 따라서 증착된 AIN박막의 FWHM값은 GHz대역 무선 통신용 RF(Radio Frequency) 밴드 패스 필터 설계에 유용하게 사용될 것이다. In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

골프 드라이브 스윙 시 엎침과 뒤침에 대한 근전도 비교

양충모 釜山大學校 附設 體育科學硏究所 2004 體育科學硏究所 論文集 Vol.20 No.-

This study analyzed Average %MVC using the muscles of five high school golf players(career over 4 years), and five university students(career under 10 months)....

기독교 분열 약사와 일치 전망

정양모 연세대학교 신과대학 2004 신학논단 Vol.35 No.-

골프 드라이브 셋업의 지면반력 일관성과 전략

양충모,서국웅 釜山大學校 附設 體育科學硏究所 2009 體育科學硏究所 論文集 Vol.25 No.1

골프나 양궁 등의 스포츠에서 일관적인 운동이나 자세수행은 경기력 향상에 매우 중요한 능력이다. 골프 게임에서 여러 가지 요소에서 일관성은 성공적인 골프를 위한 것으로 골프 지도자들에 의해 강조되고 있고, 셋업은 골프스윙에 가장 큰 영향을 미친다. 본 연구의 목적은 여자 프로골퍼가 드라이브 셋업을 할 때 지면반력(GRF)평균과 체중의 양발배분의 크기를 밝히는데 있다. 연구에 13명의 KLPGA정회원이 참가하였다. 연구의 변수는 좌.우 발의 GRF(LFz, RFz)와 압력중심점의 거리(DCoP)로 하였다. 각 피험자에게서 15회 셋업의 변이계수(CV)를 계산하였다. Fz와 DCoP의 CV는 1.8+-0.5% 였다. 3가지의 다른 체중 분배와 무게 중심전략으로 나타났다. 이 결과로 여자프로골퍼들의 셋업은 매우 일관된 각자의 전략을 갖고 있음을 알 수 있다.

발레 숙련도에 따른 센터에서 Grand Battement Jete´ a´ la seconde 동작의 운동학적 비교 분석

염창홍,박영훈,서국웅,양충모 한국운동역학회 2004 한국운동역학회지 Vol.14 No.2

C. H. YOUM, Y. H. PARK, K. W. SEO, C. M. YANG. Comparison of the kinematic analysis of grand battement jete ?la second in center between skilled and unskilled ballet majors. Korean Journal of Sport Biomechanics, Vol. 14, No. 2, pp. 153466, 2004. The purpose of this study was to investigate time of the phase, angle of the right ankle, knee, and hip joint, lateral angle of the trunk, mediolateral displacement of COM, and vertical displacement of COM between two groups while executing grand battement jets ?la seconde in a center exercise setting through 3D video analysis. The subjects participated in this study were skilled and unskilled 6 female ballet majors in Busan, respectively. The conclusions are as follows: 1. The time of the phase 2 was faster than P3. It shows a significant difference(p<.05) for P1 and P4 between skilled and unskilled groups. 2. The angle of the right ankle joint has a significant difference(p<.05) at E4 between skilled and unskilled groups. The angle of the right knee joint has no significant difference at all events between skilled and unskilled groups. The angle of the right hip joint has a significant difference(p<.001) at E3 between skilled and unskilled groups. 3. The lateral angle of the trunk has a significant difference(p<.05) at El and at E5 between skilled and unskilled groups. The skilled group of the lateral angle of the trunk was lower than the unskilled group. However the skilled group's lateral angle of the trunk was bigger than the unskilled group at E3. It has significant difference(p<.001) at E3 between skilled and unskilled groups. 4. The mediolateral displacement of COM has no significant difference at all events between skilled and unskilled groups. The vertical displacement of COM has a significant difference(p<.01) at E3 between skilled and unskilled groups.

검도 머리치기 유형에 따른 상지의 근전도 비교 분석

장언량,박영훈,염창홍,서국웅,이경순,강영택,양충모 釜山大學校 附設 體育科學硏究所 2004 體育科學硏究所 論文集 Vol.20 No.-

Of the fencing club members at D university in B city, the four skilled members and the 4 unskilled members were selected. The MVC of the left brachioradialis, right brachioradialis and left flexor carpi radialis, right flexor carpi radialis each was measured in each group according to the striking directions as they act 'striking left right head'......

Effect and mechanism of Magnolia officinalis pharmacopuncture for treating localized fat via network pharmacology and experimental study

Won Jun Choi,Mi Hye Kim,Nayoung Park,Jae Yoon Chung,Sang Jun Park,Woong Mo Yang 한국한의학연구원 2023 Integrative Medicine Research Vol.12 No.2

Background: Recently, for various reasons, the need for non-invasive treatment for localized fat has emerged. This study confirmed whether Magnolia officinalis (MO) pharmacopuncture reduces localized fat by promoting lipolysis and inhibiting adipogenesis. Methods: The network was built using genes related to the active compound of MO and the mode of action of MO was predicted by the functional enrichment analysis. Based on the result from network analysis, 100 µL of 2 mg/mL MO pharmacopuncture was injected into the inguinal fat pad for 6 weeks in obese C57BL/6J mice. Normal saline was injected into the right-side inguinal fat pad as a self-control. Results: It was expected that the AMP-activated protein kinase (AMPK) signaling pathway would be affected by the MO Network. MO pharmacopuncture reduced the weight and size of inguinal fat in HFD-induced obese mice. The phosphorylation of AMPK along with the increases of lipases was significantly increased by MO injection. Also, the expression levels of fatty acid synthesize-related mediators were suppressed by MO injection. Conclusion: Our results demonstrated that MO pharmacopuncture promoted the expression of AMPK, which has beneficial effects on activation of lipolysis and inhibition of lipogenesis. Pharmacopuncture of MO can be a non-surgical alternative therapy in the treatment of local fat tissue.

Improvement in Electrical and Optical Performances of GaN-Based LED With <tex> $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$</tex> Double Dielectric Stack Layer

Chung-Mo Yang,Dong-Seok Kim,Seong-Gil Lee,Jae-Hoon Lee,Yong Soo Lee,Jung-Hee Lee IEEE 2012 IEEE electron device letters Vol.33 No.4

<P>A SiO<SUB>2</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB> double dielectric stack layer was deposited on the surface of a GaN-based light-emitting diode (LED). The double dielectric stack layer increases the optical output power of the LED because the first Al<SUB>2</SUB>O<SUB>3</SUB> layer plays a role as an effective surface passivation layer and the second SiO<SUB>2</SUB> layer with lower index increases the critical angle of the emitted light and hence the overall extraction efficiency from the LED. The leakage current of the LED passivated with an Al<SUB>2</SUB>O<SUB>3</SUB> layer was -3.46 ×10<SUP>-11</SUP> A at -5 V, at least two and three orders lower in magnitude compared to that passivated with a SiO<SUB>2</SUB> layer (-7.14 ×10<SUP>-9</SUP> A) and that of the nonpassivated LED(-1.9 ×10<SUP>-8</SUP> A), respectively, which indicates that the Al<SUB>2</SUB>O<SUB>3</SUB> layer is very effective in passivating the exposed GaN surface after dry etching and hence reduces the nonradiative recombination as well as reabsorption of the emitted light near the etched surface.</P>

Rhee Byung-chang Collection: at the Museum of Oriental Ceramics, Osaka

Chung Yang-mo Professor, Kyonggi University The Korea Foundation 2000 Koreana (English) Vol.14 No.2