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김인성,김민수,정순종,송재성,주현규,Vo Viet Thang,Alexandru Muller 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.31
In order to fabricate multilayer piezo stack transformers, we investigated the influences of the sintering temperature and the dielectric and piezoelectric properties of Pb(Ni_(1/3)Nb_(2/3))-Pb(Mn_(1/3)Nb_(2/3))-Pb(Zr_(0.505)Ti_(0.495))O_3 (PNN-PMN-PZT) ceramics with CeO_2 additives due to their effects of grain growth suppression. Meanwhile, the effects of CeO_2 additives on the microstructure and the electrical properties of PNN-PMN-PZT were investigated in detail. In addition, multilayer piezo stack transformers with the composition of PNN-PMN-PZT were fabricated, and the characteristics were measured for various load resistances at resonance frequency. The voltage stepup ratio was continuously changed with increasing input voltage and load resistance. The output voltages and powers were increased with increasing input voltage at matching impedance. The temperature rise of the multilayer piezo stack transformer increased with increasing input voltage and load resistance. These results indicate that the optimized properties of ceramics, d_(33) = 274 pC/N, K_p = 0.55, Q_m = 2581, ε_r = 1474, density = 7.899 g/cm^3, and tanδ = 0.0031, were obtained at a sintering temperature of 1250 ℃. Meanwhile, multilayer piezo stack transformers a sintered at 1250 ℃ showed favorable characteristics with a power of 5 W at 150 Ω.
A Study on the Design and Characteristics of thin-film L-C Band Pass Filter
Kim In-Sung,Song Jae-Sung,Min Bok-Ki,Lee Won-Jae,Muller Alexandru The Korean Institute of Electrical Engineers 2005 KIEE International Transactions on Electrophysics Vol.5C No.4
The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.