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하태석 민족어문학회 2003 어문논집 Vol.47 No.-
An Phase of Transformation of Cheoy ong(處容)'s figure: Focusing on the transmission of Cheoyong(處容傳承)
하태석 안암어문학회 2001 어문논집 Vol.43 No.1
This article studied the character of twelve works of the Goryeo-sogyo(高麗俗謠) of shaman chants origin, Cheoyong-ga(處容歌), Narye-ga(儺禮歌), Seonghwangban(城皇飯), Naedang(內堂), Daewangban(大王飯), Samseong-daewang(三城大王), Daeguk One(大國 一), Daeguk Two(大國 二), Daeguk Three(大國 三), Cumrnadaewang(軍馬大王), Gucheon(九天), Byeoldaewang (別大王). These twelve works are must have originated from shaman chants, and have been firmed into court sags with keeping their wards. Their various farms and the characteristics of their types reflect the early aspect of the generation and developmental process of shaman chants. And it is important, from the viewpoint of the history of Korean literature, that these works were used as court sags in the Joseon(朝鮮) Dynasty, along with Gyeonggiche-ga(景機體歌), Akjang(樂章) and other works of Goryeo-sogyo(高麗俗謠)Accordingly these twelve works need to be illuminated again as one type of Goryeo- sogyo(高麗俗謠).
실리콘 단결정에서 산화적층결함의 핵생성에 미치는 냉각속도의 영향
하태석,김병국,김종관,윤종규 한국결정성장학회 1996 韓國結晶成長學會誌 Vol.6 No.3
실리콘 단결정에서 존재하는 산화저층결합(OISF)은 실리콘 웨이퍼의 전기적 성질에 많은 영향을 미치게 되는데 이 산화적층결함의 핵(nuclei)은 결정성장 과정에서 형성되며, 그 주요 원인으로는 초기 산소 농도, dopant의 종류 및 농도, 냉각속도 등이 있다. 본 연구에서는 냉각 속도에 따른 실리콘 단결정 내의 산화적층결함에 관하여 조사하였다. 수평관상로를 이용하여 실리콘 단결정괴를 Ar 분위기에서 $1400^{\circ}C$까지 승온후 각기 다른 냉각속도로 냉각하였다. 이후 $1150^{\circ}C$에서 산화처리를 한 후 실리콘 단결정 내의 산화적층결함의 농도를 조사하였으며, FTIR을 이용하여 산화석출물이 산화적층결함의 형성에 미치는 영향을 조사하였다. 그 결과 실리콘 단결정 내에서 산화적층결함이 가장 많이 형성되는 중간 단계의 냉각속도 범위가 있음을 확인하였으며 실리콘 단결정 내의 산소가 석출물의 형태로 존재할 때 산화적층결함이 많이 형성됨을 알 수 있었다. The OISF (Oxidation Induced Stacking Fault)is expected to affect the electrical properties in Si single crystals, and the nuclei of OISF are believed to be formed during the crystal growing process. Initial oxygen concentration, dopant type and its density, and cooling rate are regareded as major factors on OISF formation. In this study, the variations of OISF density under various cooling rate were investigated. Si single crystal was heated to $1400^{\circ}C$ in Ar ambient and cooled down to room temperature at different cooling rate, using horizontal tube furnace. After that, they were oxidized at $1150^{\circ}C$, and then, OISF was observed with optical microscope. The relation between oxide procipitates and OISF nucleation was investigated by FTIR analysis. As a result, it was found that there exists the intermediate cooling rate range in which OISF nucleation is highly enhanced. And also, it was found that OISF nucleation is closely related with silicon oxide procipitation in Si single crystals.