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김영식,장성수,이선영,진원혁,조일주,남효진,부종욱,Kim Young-Sik,Jang Seong-Soo,Lee Caroline Sun-Young,Jin Won-Hyeog,Cho Il-Joo,Nam Hyo-Jin,Bu Jong-Uk 정보저장시스템학회 2006 정보저장시스템학회논문집 Vol.2 No.2
In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.
웨이퍼 본딩을 이용한 탐침형 정보 저장장치용 열-압전 켄틸레버어레이
김영식 ( Young Sik Kim ),장성수 ( Seong Soo Jang ),이선영 ( Sun Young Lee ),진원혁 ( Won Hyeong Jin ),조일주 ( Il Joo Cho ),남효진 ( Hyo Jin Nam ),부종욱 ( Jong Uk Bu ) 정보저장시스템학회 2005 추계학술대회논문집 Vol.2005 No.-
In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric Si3N4 cantilevers. In this process, we did not use a SOl wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric ShN4 cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric ShN4 cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.