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Verneuil법에 의한 $SiO_2$를 첨가한 Sapphire 단결정 성장
조현,오근호,최종건,박한수,Cho, H.,Orr, K.K.,Choi, J.K.,Park, H.S. 한국세라믹학회 1992 한국세라믹학회지 Vol.29 No.10
SiO2 doped sapphire single crystals were grown by Verneuil method using feed material which prepared by adding SiO2 in Al2O3. Crystal growing were attempted with varing doping amount of SiO2 from 0.01 to 1.0 wt% and when the doping amount of SiO2 were 0.01~0.04 wt%, single crystals could be attained. Starting materials for feed powder were 99.99% purity alumina and extra pure SiO2 powder. Mixing these two materials by wet milling for 24 hours and drying the mixture and then was calcined at 900~110$0^{\circ}C$ for 2~4 hours. The grown crystals had yellowish color and were somewhat transparent. During growing process the flow range of oxygen was 5~7.5ι/min and of hydrogen was 13~25ι/min, the average growth rate was 7.0~11 mm/hr. The pressure of gases were fixed at 5psi. The color of crystal was appeared and mechanical property of sapphire was developed by doping of SiO2.
Verneuil법에 의한 $TiO_2$를 첨가한 Sapphire 단결정 성장과 결함에 관한 연구
조현,최종건,전병식,오근호,박한수,Cho, H.,Choi, J.K.,Chun, B.S.,Orr, K.H.,Park, H.S. 한국세라믹학회 1994 한국세라믹학회지 Vol.31 No.12
TiO2 doped sapphire single crystals were grown by Verneuil method. The doping amount of TiO2 to Al2O3 were varied 0.1, 0.2, 0.3 wt% respectively. The grown crystals have reddish color and somewhat transparent. Optimum growth condition was established by changing growth rate and gas flow ratio. Growth condition are as follows; The flow rate range of oxygen ws 5.0~7.3 ι/min and that of hydrogen was 16~25ι/min and average growth rate was 6~8mm/hr. The basic cause of color appearence and defects in crystal were studied.