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갑상샘눈병증 환자의 안와감압술에서 2차원 안와 전산화 단층촬영의 4가지 parameter의 유용성
이종석,이화,장민욱,백세현,이태수,Jong Suk Lee,Hwa Lee,Min Wook Chang,Sehyun Baek,Tae Soo Lee 대한안과학회 2014 대한안과학회지 Vol.55 No.9
Purpose: To present easily measurable 2D orbit computed tomography (CT) reference data that can be used in a preoperative study for orbital decompression and classification of individual orbital morphologies. Methods: The study sample was composed of 77 patients with orbital contusion (42 Asian males + 35 Asian females = 154 orbits) who visited the emergency room of the Korea University Guro Hospital from September 2012 to June 2013. Patients with orbital wall fracture, retrobulbar hemorrhage, or eyeball rupture were excluded. Medical records including 2D orbit or facial bone CT were retrospectively reviewed and 4 orbital parameters (orbital length, OL; globe length, GL; GL/OL ratio and 2D cone angle) were measured. Results: The average OL was 42.53 ± 2.46 mm (35.63-49.09 mm) and average GL was 24.83 ± 1.09 mm (22.75-28.13 mm). The average GL/OL ratio using these 2 parameters was 0.59 ± 0.04 (0.50-0.68). The posterior cone angle was on average, 45.96 ± 5.91° (29.35-60.04°). Conclusions: Simple measurement of 4 parameters using 2D orbit CT and classification of Asian individual orbital morphology may help in the choice of the most effective surgical technique for decompression surgery in thyroid eye disease patients. J Korean Ophthalmol Soc 2014;55(9):1267-1271
트랜치 에미터 전극을 이용한 수직형 NPI 트랜치 게이트 IGBT의 전기적 특성 향상 연구
이종석,강이구,성만영,Lee Jong-Seok,Kang Ey-Goo,Sung Man-Young 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.10
In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.