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이구현(K . H . Lee),남기석(K . S . Nam),이상로(S . R . Lee),조효석(H . S . Cho),신평우(P . W . Shin),박율민(Y . M . Park) 한국열처리공학회 2001 熱處理工學會誌 Vol.14 No.2
N/A Plasma nitrocarburising and post oxidation were performed on SM45C steel using a plasma nitriding unit. Nitrocarburising was carried out with various methane gas compositions with 4 torr gas pressure at 570℃ for 3hours and post oxidation was carried out with 100% oxygen gas atmosphere with 4 torr at different temperatures for various times. It was found that the compound layer produced by plasma nitrocarburising consisted of predominantly ε-Fe_(2-3)(N,C) and a small proportion of γ-Fe₄(N,C). With increasing methane content in the gas mixture, a phase compound layer was favoured. In addition, when the methane content was further increased, cementite was observed in the compound layer. The very thin oxide layer on top of the compound layer was obtained by post oxidation. The formation of oxide phase was initially started from the magnetite(Fe₃O₄) and with increasing oxidation time, the oxide phase was increased. With increasing oxidation temperature, oxide phase was increased. However the oxide layer was split from the compound layer at high temperature. Corrosion resistance was slightly influenced by oxidation times and temperatures.
질소 이온주입법에 의한 BN 박막의 계면구조 개선 및 밀착력 향상
변응선(E. Byon),이성훈(S.H. Lee),이상로(S.R. Lee),이구현(K.H. Lee),한승희(S.H. Han),이응직(E.J. Lee),윤재홍(J.H. Youn) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.2
ME-ARE법에 의해 합성된 c-BN 박막의 초기성장층 및 이의 계면구조를 개선하고 밀착력을 향상시키고자 후처리로서 질소이온을 주입 (PSII-N^+)하였다. 이온 주입량이 c-BN 박막의 미세구조, 계면구조에 미치는 영향에 대하여 조사하였으며 이와 함께 박막의 경도 및 박리특성에 미치는 효과를 고찰하였다. 질소이온 주입시 약 5.0×10^(15)atoms/㎠ 이상의 주입량에서부터 IR스펙트럼의 변화가 보이기 시작하였으며 5.0×10^(16)atoms/㎠ 이상의 주입량 이상에서부터 급격한 c-BN→ h-BN 상전환이 일어났다. HRTEM관찰 결과, 이온주입에 의해, sp² 결합을 하고 있는 취약한 초기성장층의 결정구조 개선을 확인할 수 있었으며 이온주입된 박막의 경도 및 박리거동을 비교하여 이온주입 및 주입량에 따른 경도 및 박리 상관관계를 설명하였다. The post ion implantation has been applied to modify early-grown BN layer and improve the adhesion of the BN films. The effect of ion implantation doses on microstructure and interlayer was investigated by FTIR and HRTEM. And the hardness and delamination life time of N^+-implanted BN films were measured. With increasing the ion dose up to 5.0×10^(16)atoms/㎠, the change of IR spectrum is observed. At 5.0×10^(16) atoms/㎠, a drastic transition of cubic phase into hexagonal phase is detected. The change of microstructure of early-grown layers by ion implantation is confirmed using HRTEM. Both microhardness and delamination life time of BN films increase with ion dose. The modification model of early-grown BN layers is briefly discussed based on the displacement per atom and excess boron in the BN film induced by ion irradiation.
TiN 박막의 경도 및 밀착력에 미치는 Pulsed DC PACVD 공정인자의 영향
윤재홍,이구현,변응선,김진관,이상로 國立 昌原大學校 産業技術硏究所 1997 産技硏論文集 Vol.11 No.-
Wear resistance TiN thin films have been widely used in machining and forming industries. In order to enhance wear resistance of TiN thin films, high hardness and adhesion to substrates are required. Tin films are ,in general, coated on cutting and/or forming tools by PACVD or PVD method, In this study, a pulsed DC PACVD method was employed to ignite and maintain the plasma during whole deposition process. The pulse on/off time ratio and pulse frequency were major deposition parameters that affected hardness and adhesion of TiN films. The hardness and adhesion of the TiN films were measured and discussed in a microstructural aspect to explain their effect. (200) preferred orientation, columnar growth and zone-I structure of the films resulted in a high hardness and a good adhesion to substrates.
Boron 확산침투법에 의한 STD61강종의 표면개질처리에 관한 연구
이상로,남기식,차병묵,윤재홍,변응선 國立 昌原大學校 産業技術硏究所 1995 産技硏論文集 Vol.9 No.-
STD 61 steel was boronized in boronizing paste mainly consisted of B₄C, Na₂B₄O7 at various temperature and times. The microhardness and the thickness of boride layers were measured and the distributions of B, Si, Cr, V on the cross section of specimens were observed by EPMA line analysis. Microscopic examination and the results of EPMA showed that the boride layer consisted of two layer and outer layer was FeB, inner was Fe₂B. The mictohardness of these boride layers were about Hv 1800~2300. Thickness of the boride layer was increased with an increase of square root of time for treatment at constant temperature. The activation energy for diffusion of B in the specimen obtained from the slope of Arrhenius plots was 260kJ/mol. α layer of Si rich was formed at the space between boride layer and matrix. Element such as Cr were concentrated as the Cr23(B,C)6 composition beneath the boride layer.