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열 화학 기상 증착법을 이용한 탄소 나노 튜브 전계 방출 소자의 제조
유완준,조유석,최규석,김도진,김효진,윤순길,Yu, W.J.,Cho, Y.S.,Choi, G.S.,Kim, D.J.,Kim, H.Y.,Yoon, S.K. 한국재료학회 2003 한국재료학회지 Vol.13 No.5
We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{-1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.
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열 화학 기상 증착법을 이용한 삼극관 구조의 탄소 나노 튜브 전계 방출 소자의 제조
유완준,조유석,최규석,김도진,Yu W. J.,Cho Y. S.,Choi G. S.,Kim D. J. 한국재료학회 2004 한국재료학회지 Vol.14 No.8
We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.
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오상준,유완준 대한흉부심장혈관외과학회 1996 Journal of Chest Surgery (J Chest Surg) Vol.29 No.9
발살바동 동맥류는 매우 드문 질환으로 1987년부터 1994년까지 인제대학교 의과대학 서울백병원 흉부외과학교실에서는 총 12례를 경험하였으며 이는 이 기간중의 심폐체외순환을 이용한 심장수술중 0.7%였다. 남자가 8례, 여자가 4례였고, 연령분포는 8세에서 38세까지로 평균 19.2세 였다. 파열이 있었던 경우는 8례였다. 발살바동 동맥류의 기원은 우측 발살바동에서 10례(83.3%), noncoronary 발살바동에서 2례 (16.6%)였다. 파열된 경우에는 우측 발살바동에서 6례, noncoronary발살바동에서 2례였으며, 우측 발살바동에서 기원한 6례중 5례가 우심실로, 1례가 우심방 및 우심실로 파열됐고, noncoronary 발살바동에서 기원한 2례중 1례가 우심방으로, 1례가 우심실로 파열됐었다. 동반된 심질환은 심실중격결손이 10례(83.3%)였고 이중 9례는 우측 발살바동에서 동반되었으며, 대동맥 판폐쇄부전이 동반된 예는 3례로서 모두 심실중격결손도 같이 동반하고 있었다. 그외 승모판폐쇄부전이 1례, 우심실양분증이 1례였다. 조기사망은 없었고, 만기사망은 술후 15개월에서 1례있었는데 심내막염으로 인하여 사망하였다. 술후 평균 29개월(4~60개월)간의 추적기간 \ulcorner만기사망 1례를 제외한 11례에서 WYHA기능적 분류로 classs I의 상태이다. 수술의 위험도나 사망률이 낮으므로 합병증의 위험이 있으면 파열이 없더라도 수술하여야 하며, 파열이 있는 경우는 진단이 되면 바로 수술을 해야할 것으로 사료된다. 대부분의 경우 대동맥판막 및 동맥류의 정확한 판단 및 교정을 위해 대동맥절개가 필요하다. 한편 동반된 심질환도 동시에 교정해주며 특히 대동맥판막에 대해서는 철저히 교정 해주어야 한다고 생각한다. Aneurysm of the sinus of Valsalva is fairly rare. Between 1987 and 1994, we operated on a total of 12 cases of aneurysm of the sinus of Valsalva at the Inje University Seoul Paik Hospital. This represents 0.7% of all cardiac operation under cardiopulmonary bypass. There were eight male and four female patients aged from 8 to 38 years(mean, 19.2 years). 8 of 12 patients had ruptured aneurysms. The origin of aneurysm of the sinus of Valsalva was the right coronary sinus in 10(83. 3%), and the noncoronary sinus in 2(16.6%). In ruptured aneurysm, the origin was the right oronary sinus in 6, and the noncoronary sinus in 2. The aneurysms originating from the right coronary sinus ruptured into the right ventricle in 5, and into both the right atrium and right ventricle in 1. The aneurysms originating from the noncoronary sinus ruptured into the right ventricle in 1, and into the right atrium in 1. Associated congenital cardiac defects included ventricular septal defect in 10(83.3%) patients 39 cases of these were associated with the aneurysms of the right coronary sinus), aortic regurgi- tation in 3 (all of these had an additional ventricular septal defect), mitral regurgitation in 1, and double chambered right ventricle in 1. No hospital deaths occurred, although one late death occurred as a result of endocarditis 15 months after the first operation. The mean follow-up period was 29 months, range from 4 to 60 months. Eleven patients except one late death were in New York Heart Association class 1. Due to the low mortality risk o( an operation for aneur sm of the sinus of Valsalva, a ruptured aneurysm of the sinus of Valsalva should be corrected surgically when the diagnosis is mane, and unruptured aneurysm of the sinus of Valsava with complication should also be operated. In most cases the aorta was opened to examine the morphology of the aneurysm and the aortic cusps, and an associated aortic valve defect should be corrected simultaneously.
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송정근,유완준,이신영,Song, Jeong-Geun,Yu, Wan-Jun,Lee, Sin-Yeong 대한흉부심장혈관외과학회 1994 Journal of Chest Surgery (J Chest Surg) Vol.27 No.8
birth-weight infants during the recovery phase of respiratory distress syndrome and has been associated with long-term pulmonary sequelae. The importance of surgical and medical abolition of left-to-right shunting in symptomatic neonates is established. Four preterm infants with birth weights under 1, 500gm with a PDA unresponsive to pharmacological closure underwent ligation. Two of preterm infants survived to be discharged and are developing normally. One infant has died due to respiratory distress syndrome, septicemia and necrotizing enterocolitis during hospital stay and other infant died due to septicemia after hospital discharge with follow-up for 6 months.
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