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1MeV 고에너지 이온주입에 의한 붕소(Boron)와 인(Phosphorus)의 급속 열처리에 따른 결정결함 분석
오환술,홍성표,강희원 건국대학교 산업기술연구원 1989 건국기술연구논문지 Vol.23 No.-
The micro-defects and dopant activation was found by high Ion Implantation of 1.0MeV Boron, Phosphrous in 10Ωcm P-type FZ grown Si(100) wafers at room temperature with the samples tilted by 4。 with respect to incident beam after 100Å oxide was grown. When Boron's dose was 1 ×10(??)㎠, 3 ×10(??)㎠, 5 ×10(??)㎠, the projected range(Rp) was 1.78㎛, 1.82㎛, 1.9㎛ respectively and when Phosphrous's dose was 1×10(??)㎠, 5 ×10(??)㎠, 1 ×10(??)㎠, Rp was 1.13㎛, 1.21㎛, 1.1㎛ respectively. Annealing after Ion Implantation was used to RTA(Rapid Thermal Annealing), annealing temperature was changed 1000℃, 1050℃ and 1100℃, annealing time 10, 20 and 40sec. Increasing dose, sheet resistance was decreasing by omnimap measurement and SIMS measurement, doping profile was broaden as increasing dose and anneal time, Rp position was deeper from surface. By XTEM microgaphy, Boron dose, 5 ×10(??)㎠, as-implanted and after annealing (1050℃, 10sec) wasn't observed crystal defects and Phosphrous dose, 1 ×10(??)㎠, as-implanted wasn't observed crystal defects but dislocation line was discovered after annealing at 1100℃, 40sec.