http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Band structure of amorphous zinc tin oxide thin films deposited by atomic layer deposition
이선영,김성준,신석희,Zhenyu Jin,민요셉 한국공업화학회 2018 Journal of Industrial and Engineering Chemistry Vol.58 No.-
Recently, zinc tin oxide (ZTO) has attracted attention as an alternative buffer layer to replace CdS for photovoltaic cells. ZTO thin films were grown by atomic layer deposition from diethylzinc, tetrakis(dimethylamido)tin, and water. Compositional, structural and optical properties were characterized to construct band diagram of the ZTO films depending on Sn content. The ZTO films exhibit optical bandgaps of 2.95–3.07 eV which are wider than that of CdS. Furthermore, their work function is also observed to vary in a wide range of 4.32–5.16 eV. It is attributed to incorporation of Sn into ZTO which strongly influences formation of oxygen vacancies.
고동현,김성준,Zhenyu Jin,신석희,이선영,민요셉 대한화학회 2017 Bulletin of the Korean Chemical Society Vol.38 No.7
This study describes a novel chemical route to grow ZnS thin films via atomic layer deposition (ALD). By using diethylzinc and 1,5-pentanedithiol as precursors of Zn and S, respectively, ZnS films are grown on substrates with an atomic precision by repeating self-limiting chemisorption of each precursor. The growth-per-cycle of the ALD process is around 0.1 Å per cycle at 150°C, and the as-grown films are characterized to be amorphous ZnS by X-ray diffraction and X-ray photoelectron spectroscopy.