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냉각체 회전법에 의한 고순도 알루미늄 및 규소의 응고 및 정련에 관한 연구
김욱,이종기,백홍구,윤우영 ( Wook Kim,Jong Ki Lee,Hong Koo Baik,Woo Young Yoon ) 한국주조공학회 1991 한국주조공학회지 Vol.11 No.4
N/A The Purification mechanism of high purity aluminum was studied through the variation of stirring speed and coolant flow rate in the stirring method. In the stirring method the degree of purification was changed as the following factors :the variation of diffusion boundary layer thickness the variation of growth rate and the solute concentration of the residual melt. The concentration of Fe and Si was decreased as the stirring speed and the radial distance increased. In a high stirring speed of 2000rpm with unidirectional stirring mode, the uniformity of solutes was obtained. On the other hand, the purification of Si was done by the combinations of stirring method, fractional melting and acid leaching. In the case of Si purification, the centrifugal force developed in the melt acted as the significant purification factor. It was possible to obtain the purified 3N grade Si crystal after the complete elimination of residual aluminum by fractional melting and acid leaching.
수직 Bridgman 법에 의한 CdTe 단결정 성장에 관한 연구
이종기,김욱,백홍구 ( Jong Ki Lee,Wook Kim,Hong Koo Baik ) 한국주조공학회 1990 한국주조공학회지 Vol.10 No.4
N/A The single crystal of CdTe was grown by modified 6 zone Bridgman method under the conditions of excess Te and excess Cd. To prevent the constitutional supercooling, the crystal growth was done under the temperature gradient of 17℃/㎝ in front of the solid /liquid interface and the growth rate was 3㎜/hr. The grain morphologies and the growth mechanism were investigated in excess Te and excess Cd conditions. The grain size of excess Te crystal was increased with an increase of the distance from the tip but, in the case of excess Cd crystal, single crystal was not obtained because of the cavities due to the excess Cd vapors so that the grain size was not increased with an increase of the distance from the tip. In addition, the growth of single crystal of CdTe was done with repeated necking ampoule. It was found that the necking had no effects on the grain selection because the cavities trapped in the necking portion acted as heterogeneous nucleation sites.
리튬 미소전지용 $LiCoO_2$ 박막양극의 전기화학적 특성에 미치는 기판의 영향
이종기,이승주,백홍구,이성만,Lee Jong-Ki,Lee Seung-Joo,Baik Hong-Koo,Lee Sung-Man 한국전기화학회 2000 한국전기화학회지 Vol.3 No.3
기판의 변화가 박막전극의 전기화학적 특성에 미치는 영향을 조사하기 위해 박막 $LiCoO_2$ 양극을 alumina, chemically etched-Si그리고 flat-Si기판 위에 증착하였다. Alumina기판의 경우 산소 분위기, $800^{\circ}C$ 30분간 열처리 후 내부에 균열이 존재하는 매우 큰 결정이 형성되었으나 flat-Si 기판의 경우에는 미세하며 균일한 결정이 관찰되었다. Flat-Si 기판 위에 증착된 박막은 alumina또는 식각된 Si 기판의 경우에 비하여 peak potential증감 및 고 전류밀도 방출 능면에서 매우 우수한 특성을 나타내었으며 이는 열처리 후 형성된 결정립의 크기, 표면 형상 및 전류 집전체의 전기저항 차이에 기인한 것으로 생각되었다. In order to investigate the substrate effect on the electrochemical properties of thin-film electrode, $LiCoO_2$ was deposited onto the alumina, chemically etched-Si and flat-Si substrates. After annealing at $800^{\circ}C$ in $O_2$ for 30min, the film deposited on the alumina consisted of large particles with several cracks, whereas the film deposited on the flat-Si substrate was composed of very small and uniform particles. The films deposited on the flat-Si showed improved electrochemical properties such as peak potential divergence and rate-capability, over those deposited on the alumina and chemically etched-Si substrate, which can be attributed to the differences of the particle size surface morphology, and the electrical resistance of the current collector.
박상립,이종기,백홍구 연세대학교 대학원 1993 延世論叢 Vol.29 No.1
A high purity Al-Li binary alloy was produced by electrolytic diffusion method using LiCl-KCl eutectic molten salt, W anode, and Al cathode. The current density affected the variation of alloy layer thickness significantly and the rate determining step in the formation of alloy was the diffusion of Li into Al electrode. The amount of Na, K in the Al-Li binary alloy was extremely low(1ppm) due to the depolarizing effect, even though Na, K compositions in molten salt were high. It was found from LSV(Linear Sweep Voltammetry) experiment that the decomposed Li+ ion migrated through the diffusion boundary layer with DLi+=1.54×10-2cm2/sec and reduced into Li via the charge transfer reaction of Li++e-→ Li at 910mV. CA(Chronoamperometry) and CP (Chronopotentiometry) experiments also showed that the reduced Li atoms nucleated at Al electrode surface, diffused into Al electrode and formed the Al-Li alloy as a sequence of Li→α→β.