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Fractional Melting 에 의한 Si 정련에 관한 연구
김귀욱,윤우영 ( Kwi Wook Kim,Woo Young Yoon ) 한국주조공학회 1997 한국주조공학회지 Vol.17 No.6
N/A Fractional melting process involves heating an alloy within its liquid-solid region simultaneously ejecting liquid from the solid-liquid mixture. The extent of the purification obtained is comparable to that obtained in multi-pass zone refining. The new fractional melting process in which centrifugal force was used for separating the liquid from the mixture has been developed and applied to the purification of the metallic grade. Refining ratio depends on partition ratio, cake wetness and diffusion in the solid, and it was controlled by various processing parameters such as rotating speed and heating rate. The new parameter called refining partition coefficient has been suggested to estimate the effects of processing variables on the refining ratio. Because major impurities in MG-silicon such as Fe, Al, Ni have a low segregation coefficient, good purification effect is expected. The results of refining MG-silicon(98%) showed that 3N-Si was obtained in refined solid of 50% of the original sample. (Received November 10, 1997)
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냉각체 회전법에 의한 고순도 알루미늄 및 규소의 응고 및 정련에 관한 연구
김욱,이종기,백홍구,윤우영 ( Wook Kim,Jong Ki Lee,Hong Koo Baik,Woo Young Yoon ) 한국주조공학회 1991 한국주조공학회지 Vol.11 No.4
N/A The Purification mechanism of high purity aluminum was studied through the variation of stirring speed and coolant flow rate in the stirring method. In the stirring method the degree of purification was changed as the following factors :the variation of diffusion boundary layer thickness the variation of growth rate and the solute concentration of the residual melt. The concentration of Fe and Si was decreased as the stirring speed and the radial distance increased. In a high stirring speed of 2000rpm with unidirectional stirring mode, the uniformity of solutes was obtained. On the other hand, the purification of Si was done by the combinations of stirring method, fractional melting and acid leaching. In the case of Si purification, the centrifugal force developed in the melt acted as the significant purification factor. It was possible to obtain the purified 3N grade Si crystal after the complete elimination of residual aluminum by fractional melting and acid leaching.
ScienceON
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