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오석균(Seok-Kyun Oh),현승철(Seung-Cheol Hyun),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),윤창선(Chang-Sun Yoon),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
SbSI : V, SbSel : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, 1×10^(-6)㎜Hg의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이였고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연 속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순물 (V, Cr, Ni)은 모결정의 T_d 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak 가 나타난다. Single crystals, SbSI : V, SbSel : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI: Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr, and Ni) are respectively attributed to the electron transitions between the split energy levels of V^(2+), Cr^(2+) and Ni^(2+) ions sited at T_d symmetry of the host lattice.
김형석,전채홍,송권,권숙인 ( Hyung Seok Kim,C . H . Jeon,Gun Song,S . I . Kwun ) 한국열처리공학회 1997 熱處理工學會誌 Vol.10 No.1
Pure copper is widely used for base material for electrical and electronic parts because of its good electrical conductivity. However, it has such a low strength that various alloying elements are added to copper to increase its strength. Nevertheless, alloying elements which exist as solid solution elements in copper matrix severely reduce the electrical conductivity. The reduction of electrical conductivity can be minimized and the strengthening can be maximized by TMT(Thermo-Mechanical Treatment) in copper alloys. In this research, the effects of TMT on mechanical and electrical properties of Cu-Ni-Al-Si-P, Cu-Ni-Al-Si-P-Zr and Cu-Ni-Si-P-Ti alloys aged at various temperatures were investigated. The Cu alloy with Ti showed the hardness of Hv 225, electrical conductivity of 59.8%IACS, tensile strength of 572MPa and elongation of 6.4%.
수퍼 2상 스테인리스강의 열처리 조건변화에 따른 첨가원소 질소의 거동
김형석,전채홍,송권,권숙인 ( Hyung Seok Kim,C . H . Jeon,Gun Song,S . I . Kwun ) 한국열처리공학회 1997 熱處理工學會誌 Vol.10 No.1
After changing the heat treating atmosphere of nitrogen gas, argon gas and vacuum, the nitrogen contents, microstructural changes, hardness and corrosion resistance of 0.25wt.%N alloyed super duplex stainless steel have been investigated in the temperature range from 1050℃ to 1350℃. The nitrogen content showed to be increased up to 0.36wt.% after heat treating the specimen in nitrogen gas at 1200℃, while the decrement of nitrogen content in vacuum atmosphere was shown down to 0.03wt.% at 1350℃. After heat treating in the mixed gas atmosphere of argon and nitrogen at 1250℃, the surface γ phase existed as α+γ phase increased with increasing nitrogen gas content. The γ single phase appeared at the surface above 80%N₂gas, while the surface α single phase was shown below 20%N₂gas. When heat treating the specimen in nitrogen gas at 1050℃, the hardness of austenite phases increased above Hv 40 at the surface layer compared to the hardness of the core parts, while decrement of denitriding effect caused to the hardness nearly unchanged between surface and the core parts after heat treating in vacuum atmosphere. The surface γ single phase specimen showed superior corrosion resistance than the surface α single phase specimen. The surface α phase existed in the α+γ microstructure showed higher corrosion resistance after heat treating in the nitrogen gas atmosphere than the a phase heat treated in the argon gas and vacuum atmosphere.
오석균,현승철,윤상현,김화택,김형곤,최성휴,윤창선,권숙일,Oh, Seok-Kyun,Hyun, Seung-Cheol,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다. Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.
현승철(Seung-Cheol Hyun),오석균(Seok-Kyun Oh),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),김창대(Chang-Dae Kim),윤창선(Chang-Sun Yoon),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, 및Sb_(1-x)Bi_xSeI : Co 단결정을 성장시키기 위하여, 투명석영관내에 고순도의 성분원소 혼합물을 넣고 진공봉입하여 iogot를 합성하였다. 합성된 ingot를 사용하여 수직 Bridgman 방법으로 이들 단결정을 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이었고, energy band 구조는 간접전이형으로 주어졌으며, 조성 X에 따른 energy gap의 조성의존성은 E_g(x)=E_g(0)-Ax+BX²으로 주어진다. 불순물로 cobalt를 첨가할 때 나타나는 불순물 광흡수 peak는 모결정의 T_d 대칭점을 갖는 격자점에 첨가한 cobalt 가 Co²+, Co³+ ion으로 위치하고, 이들 ion의 energy 준위들 사이의 전자전이에 의해서 나타남을 확인하였다. SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, and Sb_(1-x)Bi_xSeI : Co single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by E_g(x)=E_g(0)-Ax+Bx². The impurity optical absorption peaks due to cobalt doped with impurity are attributed to the electron transitions between the split energy levels of Co²+ and Co³+ ions sited at T_d symmetry of the host lattice.
현승철,오석균,윤상현,김화택,김형곤,최성휴,김창대,윤창선,권숙일,Hyun, Seung-Cheol,Oh, Seok-Kyun,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Kim, Chang-Dae,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.