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산화알루미늄 박막의 두께 및 열처리 온도에 따른 Al<sub>2</sub>O<sub>3</sub>/GaN MIS 구조의 전기적 특성 변화
곽노원,이우석,김가람,김현준,김광호,Kwak, No-Won,Lee, Woo-Seok,Kim, Ka-Lam,Kim, Hyun-Jun,Kim, Kwang-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.6
We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.
김광호,곽노원,이수홍 대한금속·재료학회 2009 ELECTRONIC MATERIALS LETTERS Vol.5 No.2
AlN films on n-type GaN (0001) were prepared using a remote-plasma atomic-layer-deposition (RPALD) technique with a trimethylaluminum(TMA) precursor and nitrogen/hydrogen, argon/hydrogen radicals ranging in temperature from room temperature (RT) to 500℃. The growth rate per cycle was varied with the substrate temperature from 2.3 Å/ cycle at R. T. to 0.9 Å/cycle at 500℃. X-ray diffraction results showed that the as-grown AlN films on GaN substrates had amorphous phase structures. The estimated interface trap density measured was about 2.4 × 1011/㎠eV at 1.08 eV below the conduction band edge. The leakage current densities measured at room temperature was about 5 × 10-10 A/㎠ under a field of 1 MV/cm.
산화알루미늄 박막을 이용한 GaN MIS 구조의 제작 및 전기적 특성
윤형선,정상현,곽노원,김가람,이우석,김광호,서주옥,Yun, Hyeong-Seon,Jeong, Sang-Hyun,Kwak, No-Won,Kim, Ka-Lam,Lee, Woo-Seok,Kim, Kwang-Ho,Seo, Ju-Ok 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.