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김승섭(Seung-Sub Kim),한성욱(Seong-Uk Han),박근수(Geun-Soo Park),우관제(Kwan-Je Woo) 한국철도학회 2011 한국철도학회 학술발표대회논문집 Vol.2011 No.5
Bogie frame is typical safety part of railway vehicle. Total serviceable life of bogie frame will be evaluated by Cumulative Damage Approach Method that is defined by dynamic strain measurement during revenue service under the actual track conditions. As a result of the standardization process developed in British Standard Institution, BS 7608 defines for fatigue design and test method of steel structure by fatigue test results over the long period. This paper evaluates the total serviceable life applying BS 7608 for the bogie frame of Electric Multiple Unit to verify structural safety of the bogie frame.
열산화 T${a_2}{O_5}$박막에 미치는 RTA후처리의 영향
문환성,이재석,한성욱,박상균,양승지,이재천,박종완,Mun, Hwan-Seong,Lee, Jae-Seok,Han, Seong-Uk,Park, Sang-Gyun,Yang, Seung-Ji,Lee, Jae-Cheon,Park, Jong-Wan 한국재료학회 1993 한국재료학회지 Vol.3 No.3
P-type(100)Si Wafer 위에 400$\AA$의 Ta를 증착하여 열산화법으로 ${Ta_2}{O_5}$박막을 형성시킴 후 RTA후처리를 통하여 절연파괴전장 특성 개선을 이루고자 하였다. 유전상수에 미치는 RTA후처리의 영향은 미약하지만 절연파괴전장을 나타내었으나 결정화 온도 이하의 RTA온도에서는 절연파괴전장이 5.4MV/cm로 RTA효과가 크게 나타났다. 이러한 RTA효과는 RTA온도 $575^{\circ}C$에서 flat band voltage shift가 RTA 시간에 따라 변화가 없는 것으로 미루어 보아 RTA효과는 계면 변화에 의한 것이 아님을 알 수 있었으며, RBS 분석을 통하여 ${Ta_2}{O_5}$1박막의 치밀화에 의한 것임을 확인할 수 있었다. The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.