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Insulated Gate Transistor의 설계 및 제작
정상구,김진형,최연익,이동엽,황성규,성만영 亞洲大學校 1988 論文集 Vol.11 No.-
In this paper, we discuss fabrication and characteristics of the singular and the array-type insulated gate transisters(IGT). The starting wafers were two kinds: for a singular type IGT, p type(100) silicon with n??buffer and n??epitaxial layer; for a array-type IGT, p type(111) silicon with the n??epi layer. The channel regions were defined using the self-aligned double-diffusion process. Aluminum and poly silicon gate were used in the singular and array-type IGT, respectively. Characteristics of the singular IGT shows threshold voltage of 4 V, breakdown voltage of 73V and forward voltage drop of 0.7V. On the whole, the experimental results were in agreement with the theoretical ones when comparing the breakdown voltage and forward voltage drop. On the other hand, array-type IGT shows poor I-V characteristics, relatively low breakdown voltage and large leakage current.
최근 광통신용 반도체 소자 및 장치의 연구개발에 관한 동향
성만영 대한전기학회 1984 전기의 세계 Vol.33 No.2
본고의 내용은 다음과 같다. 1. 반도체 레이저 2. 발광 다이오드 3. 광검출기 4. 광 파이버의 전송로 5. 광회로 6. 집적광 디바이스의 시작
InSb化合物 半導體에 있어서의 諸效果와 그 活用性에 관한 硏究 : 高周波效果를 中心으로
成萬永 단국대학교 1984 論文集 Vol.18 No.-
This paper describes studies on various fundamental effects related to the magnetoresistive effects in InSb, of which electron mobility is known to be the highest in semiconductors. The main purpose of this paper is to contribute to a better understanding of the characteristics of the magnetoresistive devices from an engineering point of view, and then promote the development of their new application fields. The magnetoresistive effect is an effect in which a semiconductor element changes its electric resistance when a magnetic field is applied to it. The resistance change between to current electrodes is attributed to the change in the current flow in the element and the change in the resistivity. The former is a phenomenological effect and is called the geometrical effect, since it is great influenced by the geometrical configuration of the element. The latter is a magnetic field dependence of the resistivity and is called the magnetoresistivity effect or the physical magnetoresistance. In this paper, the magnetoresistive effects at a high frequency are described. Theoretical calculation has been made on high frequency transport properties of InSb under a d.c. magnetic field, leading to a conclusion that the relative increase of microwave loss in InSb under a magnetic field, γ_1 is given by γ_0{1+ω(τ_e+τ_h)}, where γ_0 is the relative resistivity increase Δρ/ρ_0 under a d.c. magnetic field with d.c. current, and γ_e and γ_h are the relaxation time for electrons and that of holes respectively. Measurements were made on the microwave power loss at 34㎓ at room temperature under magnetic fields up to 1.5 Telsa. The experimental results show an appreciable influence of ωτ on the loss even at room temperature as predicted by the theory. The influence of the surface roughness and geometry at 34㎓ has also been investigated experimentally. It has been found that these effects play an important role in high frequency properties in InSb under a magnetic field.