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Kim, Sunghwan,Kim, Seongjae,Kim, Sungjae,Rhee, Kunsoo Cambridge University Press 2011 Journal of cell science Vol.124 No.22
<P>The centrosomes in dividing cells follow a series of cyclical events of duplication and separation, which are tightly linked to the cell cycle. Serine/threonine-protein kinase NEK7 (NEK7) is a centrosomal kinase that is required for proper spindle formation during mitosis. In this study, we observed that centriole duplication was inhibited in NEK7-depleted cells. Ectopic expression of centrosome-directed NEK7 led to the formation of extra centrioles in a kinase-activity-dependent manner. We also observed extra centriole formation in centrosome-directed NEK6-expressing cells, suggesting that NEK6 and NEK7 might share biological activities that induce centriole duplication. The centrosomal pericentriolar material (PCM) proteins were significantly reduced in NEK7-depleted cells. The PCM proteins in NEK7-depleted cells did not accumulate at the centrosomes, even if the cells exited mitosis and progressed to the G2 phase. These results revealed that NEK7 is essential for PCM accumulation in a cell cycle stage-specific manner. Furthermore, HeLa cells depleted of NEK7 during S phase retained a higher quantity of PCM proteins and exhibited a less severe mitotic phenotype. On the basis of these results, we propose that NEK7 is involved in the recruitment of PCM proteins, which are necessary for both centriole duplication and spindle pole formation. Our study revealed that NEK7 activity is required for centrosome cycle progression not only at M phase, but also at G1 phase.</P>
Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory
Kim, Seunghyun,Lee, Sang-Ho,Park, Sang-Ku,Kim, Youngmin,Cho, Seongjae,Park, Byung-Gook The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.5
In this paper, we investigate the retention characteristics cause by loss of trapped charges in charge-trap NAND flash memory. We fabricated silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices having different widths and lengths for setting up a more accurate retention model. For higher accuracy in the measurement results, we have set up a fast-response measurement scheme to have a closer look at the retention characteristics, using a waveform generator and a fast-measurement unit. Drain current can be measurement immediately after a program operation with a ${\mu}s$-level resolution. Transient analysis on the retention characteristics over a very short time period is performed along with the long-time measurement results. As the result, a more succinct set of clues for understanding the initial charge loss and the charge redistribution are provided.
Nano-cone resistive memory for ultralow power operation
Kim, Sungjun,Jung, Sunghun,Kim, Min-Hwi,Kim, Tae-Hyeon,Bang, Suhyun,Cho, Seongjae,Park, Byung-Gook IOP 2017 Nanotechnology Vol.28 No.12
<P>SiN<SUB> <I>x</I> </SUB>-based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.</P>
Kim, Hoijoon,Park, Taejin,Park, Seongjae,Leem, Mirine,Ahn, Wonsik,Lee, Hyangsook,Lee, Changmin,Lee, Eunha,Jeong, Seong-Jun,Park, Seongjun,Kim, Yunseok,Kim, Hyoungsub Elsevier 2019 THIN SOLID FILMS - Vol.673 No.-
<P><B>Abstract</B></P> <P>For the fabrication of high-performance top-gated MoS<SUB>2</SUB> transistors, a uniform atomic layer deposition (ALD) of an ultrathin high-<I>k</I> gate dielectric film without abnormal leakage paths on a MoS<SUB>2</SUB> channel is required. In this study, we fabricated a ~5.2 nm-thick monolithic HfO<SUB>2</SUB> gate dielectric film by utilizing an e-beam-evaporated Hf seed layer (target thickness of 3 nm) prior to the ALD of a HfO<SUB>2</SUB> film (~2 nm). The Hf seed layer was fully converted to HfO<SUB>2</SUB> without metallic residues during the following ALD process, without damages to the Raman and photoluminescence characteristics of the underlying MoS<SUB>2</SUB>. The conformal and pinhole-free ALD of the subsequent HfO<SUB>2</SUB> film was verified using conductive atomic force microscopy. In addition, operation of a top-gated MoS<SUB>2</SUB> transistor was demonstrated by integrating the Hf-seeded HfO<SUB>2</SUB> gate dielectric film.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Conformal and monolithic Hf-seeded ALD-HfO<SUB>2</SUB> film is formed on MoS<SUB>2</SUB>. </LI> <LI> Hf seed layer formation does not impose significant damages on MoS<SUB>2</SUB>. </LI> <LI> Hf-seeded HfO<SUB>2</SUB> gate dielectric film can be integrated in top-gated MoS<SUB>2</SUB> transistor. </LI> </UL> </P>
Seongjae Jo,Jinyeong Kim,Yejin Kim,Oh Seok Kwon 한국진공학회(ASCT) 2021 Applied Science and Convergence Technology Vol.30 No.6
Owing to rapid climate change and increasingly stringent carbon regulations, carbon dioxide detection is becoming more important. In this study, we fabricate a cucurbit[6]uril-functionalized gold nanorod-based localized surface plasmon resonance (LSPR) gas sensor to detect carbon dioxide. The gold nanorods provide a high refractive index unit that enables the measurement of gas molecules with low molecular weights, while cucurbit[6]uril is a chemical receptor that binds to carbon dioxide owing to its structural characteristics. Therefore, cucurbit[6]uril was functionalized through direct adhesion on the surface of gold nanorods, which was replaced with citrate. The manufactured sensor can detect the presence of carbon dioxide at a maximum concentration of 400 ppm in the atmosphere. The high potential applicability of the cucurbit[6]uril-applied LSPR gas sensors is demonstrated in this study.
Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors
Kim, Sung Yoon,Seo, Jae Hwa,Yoon, Young Jun,Yoo, Gwan Min,Kim, Young Jae,Eun, Hye Rim,Kang, Hye Su,Kim, Jungjoon,Cho, Seongjae,Lee, Jung-Hee,Kang, In Man The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.
( Seongjae Kim ),( Hyeoung-eun Kim ),( Boyeon Kang ),( Youn-woo Lee ),( Hangeun Kim ),( Dae Kyun Chung ) 한국미생물생명공학회(구 한국산업미생물학회) 2017 Journal of microbiology and biotechnology Vol.27 No.10
Lipoteichoic acid (LTA), a cell wall component of gram-positive bacteria, is recognized by Toll-like receptor 2, expressed on certain mammalian cell surfaces, initiating signaling cascades that include nuclear factor kappa-light-chain-enhancer of activated B cells (NF-κB) and mitogen-activated protein kinase. There are many structural and functional varieties of LTA, which vary according to the different species of gram-positive bacteria that produce them. In this study, we examined whether LTA isolated from Staphylococcus aureus (aLTA) affects the expression of junction proteins in keratinocytes. In HaCaT cells, tight junctionrelated gene expression was not affected by aLTA, whereas adherens junction-related gene expression was modified. High doses of aLTA induced the phosphorylation of extracellular signal-regulated protein kinases 1 and 2, which in turn induced the epithelial-mesenchymal transition (EMT) of HaCaT cells. When cells were given a low dose of aLTA, however, NF-κB was activated and the total cell population increased. Taken together, our study suggests that LTA from S. aureus infections in the skin may contribute both to the outbreak of EMT-mediated carcinogenesis and to the genesis of wound healing in a dose-dependent manner.