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CoMn₂O₄ 스피넬 박막의 합성과 후열처리가 박막의 물리적 특성에 미치는 영향
김두리(D. R. Kim),김진경(J. K. Kim),윤세원(S. W. Yoon),송종현(J. H. Song) 한국자기학회 2015 韓國磁氣學會誌 Vol.25 No.5
We grew spinel structured CoMn₂O₄ thin films and have studied post-growth annealing effects on their physical properties. After post-growth annealing at 700℃ that is lower than the growth temperature (720℃), crystal structure became cleared accompanying a change of surface structure. In the temperature dependences of magnetization, phase transitions were observed at ~100 K for both before and after post-growth treated samples which were not observed for the bulk. For both samples, ferromagnetic behaviors were observed above 100 K while it turned to ferrimagnetism at low temperature below 100 K. In particular, the ferrimagnetic behavior became strong after the post-growth treatment. These results indicate that the post-growth annealing process plays an important role in determining the physical properties of spinel CoMn₂O₄ thin film.
정호경,문석호,김종규 한국공업화학회 2019 한국공업화학회 연구논문 초록집 Vol.2019 No.0
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metalorganic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards 2-dimensional electronics and optoelectronics.
Growth of ZnS Films and Post-Annealing Effects
B. S. Yun,김준호 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
We fabricated ZnS films by using a chemical spray method at ambient air conditions. Cubic-phase ZnS films were obtained at temperatures of 500 ~ 550 ℃, which was confirmed by X-ray diffraction (XRD) and uv-visible spectrum measurements. We found that post annealing under an ambient air environment converted amorphous ZnS films into crystalline ZnO films whereas post annealing in vacuum resulted in no apparent change in crystal structure. The results of the XRD and the Raman spectra supported that high-quality ZnO films were obtained through simple air annealing of sprayed ZnS films.