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Solution-processed germanium nanowire-positioned Schottky solar cells
Yun, Ju-Hyung,Park, Yun Chang,Kim, Joondong,Lee, Hak-Joo,Anderson, Wayne A,Park, Jeunghee Springer 2011 NANOSCALE RESEARCH LETTERS Vol.6 No.1
<P>Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture.</P>
Metal-induced growth of crystal Si for low-cost Al:ZnO/Si heterojunction thin film photodetectors
Tong, Chong,Kozarsky, Eric S.,Kim, Joondong,Yun, Juhyung,Anderson, Wayne A. Elsevier 2018 Materials science in semiconductor processing Vol.82 No.-
<P><B>Abstract</B></P> <P>Quality crystal silicon (Si) thin films were grown via the metal-induced growth (MIG) method, which is a low-cost and metal-silicide assisted technique. The metal catalysts of Ni, Pd and Co were first deposited onto substrates for silicide template layer formation. Then, crystal Si thin films with a thickness of ~ 5 µm were epitaxially deposited on the silicide seeds via DC magnetron sputtering. The crystallinity of the Si films was confirmed and investigated by X-ray diffraction (XRD). These Si thin films were then used to fabricate Al doped ZnO (AZO)/MIG Si heterojunction photodetectors. The device achieved a saturation photocurrent of 23.2 mA/cm<SUP>2</SUP> at − 5 V. This photocurrent level is comparable with that of previous reported AZO/bulk-Si devices. Current transport mechanisms and defect distributions were also studied. By analyzing the dark current-voltage (I – V) characteristics, the space charge limited (SCL) current dominated junction behaviors with an exponential defect level distribution were determined. In the bias range of 0.25 V < V < 1.0 V, SCL current transported in the mobility regime based on I ∝ V<SUP>β</SUP>, where β > 3. For 0 <SUP><</SUP> V < 0.25 V, tunneling and SCL current in ballistic regime were implied due to I ∝ V<SUP>1.5</SUP>. In the reverse bias, the device exhibited SCL current in saturation regime or tunneling, suggested by the unity I-V relation. The fabricated devices with the theoretical understanding of the defect and carrier transport mechanisms provided new design insights for low-cost ZnO/MIG-Si thin film optoelectronics.</P>
Transparent conductive oxide layers-embedding heterojunction Si solar cells
윤주형(Yun, Ju-Hyung),김민건(Kim, Mingeun),박윤창(Park, Yun Chang),김준동(Kim, Joondong),Anderson, Wayne A. 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.11
High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.