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Hideto Tada,Masafumi Kobune,Koji Fukushima,Hisashi Oshima,Daisuke Horit,Akihiro Tamura,Yusuke Daiko,Atsushi Mineshige,Tetsuo Yazawa,Hironori Fujisawa,Masaru Shimizu,Hideshi Yamaguchi,Koichiro Honda 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2
The structural characteristics, the mechanism of crystal growth, and the ferroelectric properties of partially Sm-substituted perovskite bismuth-samarium-nickel-titanate [(Bi1−xSmx)(Ni0.5Ti0.5)- O3; BSNT, x = 0− 0.9] thin films deposited on Pt(100)/MgO(100) substrates by rf sputtering have been investigated using X-ray diffraction, transmission electron microscope, and polarization - electric field hysteresis loop measurements. The fabricated BSNT samples with x≥0.6 were confirmed to have a single-phase perovskite structure. Of the four samples (x = 0.6 0.7, 0.8, and 0.9) with a single-phase perovskite structure, the c-axis-oriented epitaxial BSNT film with x = 0.9 exhibited the best hysteresis loop, with a remanent polarization of 2 μC/cm2 and a coercive field of 100 kV/cm. The structural characteristics, the mechanism of crystal growth, and the ferroelectric properties of partially Sm-substituted perovskite bismuth-samarium-nickel-titanate [(Bi1−xSmx)(Ni0.5Ti0.5)- O3; BSNT, x = 0− 0.9] thin films deposited on Pt(100)/MgO(100) substrates by rf sputtering have been investigated using X-ray diffraction, transmission electron microscope, and polarization - electric field hysteresis loop measurements. The fabricated BSNT samples with x≥0.6 were confirmed to have a single-phase perovskite structure. Of the four samples (x = 0.6 0.7, 0.8, and 0.9) with a single-phase perovskite structure, the c-axis-oriented epitaxial BSNT film with x = 0.9 exhibited the best hysteresis loop, with a remanent polarization of 2 μC/cm2 and a coercive field of 100 kV/cm.
Toru Yamaji,Hideto Tada,Koji Fukushima,Msafumi Kobune,Tetsuo Yazawa 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
Bismuth lanthanum titanate (BLT) films with compositions of (1-x)Bi3.25La0.75Ti3O12 + xBi2O3, where x = 0.28 . 0.36, were successfully deposited on Pt(111)/SiO2/Si(100) substrates by rf-magnetron sputtering using a powder target. All the BLT films were confirmed to have a single-phase bismuth-layer perovskite structure without the presence of a secondary phase. The x = 0.28 and 0.30 BLT films exhibited rounded grain morphologies with an average grain size of approximately 320 nm. On the other hand, BLT films with excess Bi2O3 of x 0.32 had significantly enhanced grain growth, exhibiting oval grain morphologies with an average grain size of approximately 500 nm × 200 nm. From the results for the J . E characteristics, the x = 0.30 BLT films showed the highest electrical insulation. The x = 0.30 BLT film also showed the best hysteresis loop shape with a remanent polarization of 2Pr = 31 μC/cm2 and a coercive field of 2Ec = 170 kV/cm. Measurements of the fatigue characteristics showed that all the samples exhibited nearly fatigue-free behavior that resisted degradation even after 1 × 1010 cycles.C
Repair Circuit of TSVs in a 3D Stacked Memory IC
Yuki Ikiri,Masaki Hashizume,Hiroyuki Yotsuyanagi,Hiroshi Yokoyama,Tetsuo Tada,Shyue-Kung Lu 대한전자공학회 2015 ITC-CSCC :International Technical Conference on Ci Vol.2015 No.6
A repair circuit for TSVs (Through Silicon Vias) in a 3D stacked memory IC is proposed in this paper. The circuit is made of a switch circuit and a switch control circuit so as for a defective TSV to be connected to a defect-free TSV. The circuit is evaluated by Spice simulation. The results show us that a TSV is connected to a defect-free one with small area overhead and additional delay.