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Review : Prenatal diagnosis of cardiac defect
( Mamoru Tanaka ),( Kei Miyakoshi ),( Kazuhiro Minegishi ),( Yasunori Yoshimura ) 대한산부인과학회 2010 Journal of Womens Medicine Vol.3 No.1
Fetal cardiac malformations are the most common congenital malformations with an incidence of 8:1000 among live births. Furthermore, 10% of neonatal deaths and up to 50% of infant deaths were attributed to congenital anomalies. In 2006 the International Society of Ultrasound in Obstetrics and Gynecology (ISUOG) published practice guidelines for the sonographic screening of congenital heart disease (CHD) at some time between 18 and 22 weeks` gestation. Two levels for screening low-risk fetuses for heart anomalies are recommended. Firstly, a basic scan should be performed by analyzing a four-chamber view of the fetal heart. Secondly, an extended-basic scan further examines the size and relationships of both arterial outflow tracts. Obstetricians, midwives, and perinatalogists are able to evaluate a thorough examination of the four-chamber view, both arterial outflow tracts, three vessels and trachea view, and an assessment of pulmonary venous return. These anatomical features are usually evaluated using transverse views, although sagittal scanning planes are also used as necessary. Color Doppler ultrasonography is an important component of the fetal echocardiogram. Occasionally, advanced techniques such as Velocity Vector Imaging (VVI) may be required to evaluate fetal cardiac function using measurements of ventricular ejection fraction, stroke volume, and ventricular strain parameters. An accurate prenatal diagnosis of cardiac defects, especially ductal dependent anomaly, is extremely important for healthcare professionals who will be counseling parents about the nature, severity, clinical management and prognosis of their unborn child.
THERMOELECTRIC PROPERTIES OF OXIDE CERAMICS
Tsuchida, Kiyoshi,Tanaka, Yasunori,Ifuku, Toshihiro,Nakao, Yoshihiro,Matsuda, Takanori,Nagashima, Satoko,Maeda, Hideaki,Kato, Akio 한국화학공학회 1996 Korean Journal of Chemical Engineering Vol.13 No.5
Thermoelectric properties of several oxides were investigated. Al₂O₃-, TiO₂- or ZrO₂-doped ZnO showed large power factor over the wide temperature range. Fe₂O₂ showed large power factor by doping of TiO₂. BaO-doped RuO₂, BaRuO₃ and CaRuO₃ showed large power factor at high temperature. Improvement of electrical conductivity by doping was effective to increase power factor in these oxide materials.
A novel HSF1-mediated death pathway that is suppressed by heat shock proteins
Hayashida, Naoki,Inouye, Sachiye,Fujimoto, Mitsuaki,Tanaka, Yasunori,Izu, Hanae,Takaki, Eiichi,Ichikawa, Hitoshi,Rho, Jaerang,Nakai, Akira Wiley (John WileySons) 2006 The EMBO journal Vol.25 No.20
<P>Heat shock response is an adoptive response to proteotoxic stress, and a major heat shock transcription factor 1 (HSF1) has been believed to protect cells from cell death by inducing heat shock proteins (Hsps) that assist protein folding and prevent protein denaturation. However, it is revealed recently that HSF1 also promotes cell death of male germ cells. Here, we found a proapoptotic Tdag51 (T-cell death associated gene 51) gene as a direct target gene of HSF1. Heat shock and other stresses induced different levels of Hsps and Tdag51, which depend on cell types. Hsps bound directly to the N-terminal pleckstrin-homology like (PHL) domain of Tdag51, and suppressed death activity of the C-terminal proline/glutamine/histidine-rich domain. Tdag51, but not major Hsps, were induced in male germ cells exposed to high temperatures. Analysis of Tdag51-null testes showed that Tdag51 played substantial roles in promoting heat shock-induced cell death in vivo. These data suggest that cell fate on proteotoxic condition is determined at least by balance between Hsp and Tdag51 levels, which are differently regulated by HSF1.</P>
Electric and Physical Chacteritics of a SiC-PiN Diode for High-Power Devices
Nam Oh Kim,Wan-Ki Min,Kyung-Min Sung,Kazuma Suzuki,Yasunori Tanaka,Hiromichi Ohashi 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.6
This paper is presented on a 2.5-kV silicon-carbide (SiC) PiN diode with a silicon injection enhancement gate transistor (IEGT) in an inductively loaded chopper circuit. The experimental switching characteristics of the SiC-PiN diode are presented under a DC 1200 V bias voltage and 40 A cutoff current. Experimental results show that the reverse recovery time and the IEGT turn-on loss are significantly reduced by the combination of the SiC-PiN diode and the IEGT. To reduce switching losses and investigate the limitation of the switching frequency in high power converters, we newly present the design concept of an IEGT combined with a SiC-PiN diode. The proposed design concept is evaluated based on a device simulation. The result of the device simulation yields the possible switching frequency by using the comprehensive total devices loss in the test circuit. This paper is presented on a 2.5-kV silicon-carbide (SiC) PiN diode with a silicon injection enhancement gate transistor (IEGT) in an inductively loaded chopper circuit. The experimental switching characteristics of the SiC-PiN diode are presented under a DC 1200 V bias voltage and 40 A cutoff current. Experimental results show that the reverse recovery time and the IEGT turn-on loss are significantly reduced by the combination of the SiC-PiN diode and the IEGT. To reduce switching losses and investigate the limitation of the switching frequency in high power converters, we newly present the design concept of an IEGT combined with a SiC-PiN diode. The proposed design concept is evaluated based on a device simulation. The result of the device simulation yields the possible switching frequency by using the comprehensive total devices loss in the test circuit.
Hiroyuki Kaji,Akira Togayachi,Makoto Ochou,Maki Sogabe,Takashi Okura,Hirofumi Nozaki,Takashi Angata,Yasunori Chiba,Hidenori Ozaki,Atsushi Kuno,Yasuhito Tanaka,Yuzuru Ikehara,Masashi Mizokami,Hisashi N 한국당과학회 2012 한국당과학회 학술대회 Vol.2012 No.1
We present here a high-throughput strategy to discover serological biomarkers for early-detection of hepatocellular carcinoma (HCC). Our strategy is also applicable to assess the progressed liver fibrosis that is associated with virus hepatitis. The glycan structure on glycoproteins derived from cancerous cells is known to be different from that derived from normal cells, specifically, the increased aberrant glycosylation appears in patient serum with virus hepatitis along with either or both the initiation and progression. Based on the above perceptions, in order to identify glycoproteins carrying aberrant glycosylation in serum of liver disease patients, we analyzed lectin-captured glycopeptides by the IGOT method. Many glycoproteins carrying altered glycans were successfully identified. The increased amount of these glycoproteins was clinically relevant to the progression of the liver diseases. We are now selecting appropriate molecules depending on the feasibility to detect an abnormality in the liver, such as the occurrence of liver cell neoplasm.