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Takuya Nishikawa,Keisuke Ohdaira,Hideki Matsumura 한국물리학회 2011 Current Applied Physics Vol.11 No.3
The electrical properties of polycrystalline silicon (poly-Si) films formed from amorphous silicon (a-Si)films by flash lamp annealing (FLA) are investigated by Hall effect measurement. The impurity-doping concentration dependences of resistivity, carrier density, and Hall mobility of such flash-lamp-crystallized (FLC) poly-Si films show the effect of carrier trapping at grain boundaries (GBs). Potential barrier height formed at GBs, estimated from the temperature dependences of Hall mobility and electrical conductivity, decreases with an increase in doping concentration, due to the complete filling of trapping states at GBs. The density of trapping states at GBs is estimated to be on the order of 10^12 cm^-2 from such barrier heights, which is almost equivalent to those of poly-Si films prepared by other techniques such as solid-phase crystallization or laser annealing of a-Si films.
Keisuke Ohdaira,Hiroyuki Takemoto,Takuya Nishikawa,Hideki Matsumura 한국물리학회 2010 Current Applied Physics Vol.10 No.3
Polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor a-Si films are found to hardly lose hydrogen (H) atoms during crystallization and keep the initial H concentration on the order of 1021/㎤. Short annealing duration and sufficient Si film thickness would lead to the suppression of H desorption. A characteristic lateral crystallization mechanism, referred to as explosive crystallization (EC), may also contribute to the prevention of H desorption due to rapid lateral heat diffusion into neighboring a-Si. Poly-Si films after annealing under N2 or forming gas ambient shows remarkably long minority carrier lifetime compared to untreated films, indicating effective defect termination by H atoms remaining in the poly-Si films.
( Yuzo Nagai ),( Sinsuke Kazama ),( Daisuke Yamada ),( Takuya Miyagawa ),( Koji Murono ),( Koji Yasuda ),( Takeshi Nishikawa ),( Toshiaki Tanaka ),( Tomomichi Kiyomatsu ),( Keisuke Hata ),( Kazushige 대한피부과학회 2016 Annals of Dermatology Vol.28 No.5
Treatment of perianal and vulvar extramammary Paget disease (EMPD), rare intraepithelial malignancies, is often challenging because of its potential to spread into the anal canal. However, there is still no consensus regarding the optimal resection margin within the anal canal. Between 2004 and 2014, six patients (three with perianal EMPD and three with vulvar EMPD) in which the spread of Paget cells into the anal canal was highly suspected were referred to our department. To evaluate the disease extent within the anal canal, preoperative mapping biopsy of the anal canal was performed in five out of six patients. Two patients were positive for Paget cells within the anal canal (one at the dentate line and the other at 0.5 cm above the dentate line), whereas in three patients, Paget cell were present only in the skin of the anal verge. Using 1 cm margin within the anal canal from the positive biopsy sites, we performed anal-preserving wide local excision (WLE), and negative resection margins within the anal canal were confirmed in all five patients. The remaining one patient with perianal EMPD did not undergo mapping biopsy of the anal canal because preoperative colonoscopy revealed that the Paget cells had spread into the lower rectum. Therefore, WLE with abdominoperineal resection was performed. During the median follow-up period of 37.3 months, no local recurrence was observed in all patients. Our small case series suggest the usefulness of mapping biopsy of the anal canal for the treatment of perianal and vulvar EMPD. (Ann Dermatol 28(5) 624∼628, 2016)
Kim, Young Yong,Jung, Sungmin,Kim, Changsub,Ree, Brian J.,Kawato, Daisuke,Nishikawa, Naoki,Suemasa, Daichi,Isono, Takuya,Kakuchi, Toyoji,Satoh, Toshifumi,Ree, Moonhor American Chemical Society 2014 Macromolecules Vol.47 No.21
<P>A series of miktoarm star polymers, [poly(<I>n</I>-hexyl isocyanate)(12K)]–[poly(ε-caprolactone)<SUB>1–3</SUB>(5K)] (PHIC–PCL<SUB>1–3</SUB>) (composed of a rigid self-assembling PHIC arm and one to three flexible crystallizable PCL arms), were investigated to examine the polymers’ thermal properties and nanoscale thin film morphologies. The miktoarm polymers were stable up to 180 °C. The PHIC and PCL arm components underwent phase separation during the solution casting, drying, and post toluene-annealing processes, forming interesting but very complex thin film morphologies. The resulting thin film morphologies were examined in detail for the first time using synchrotron grazing incidence X-ray scattering (GIXS) measurements and quantitative data analysis. All of the miktoarm star polymer films formed vertically well-oriented lamellar structures, regardless of the number and length of PCL arms. These structures were quite different from the cylindrical structures commonly observed in conventional flexible diblock copolymer films having comparable volume fractions. The individual PHIC and PCL lamellar domains self-assembled to form their own respective morphological structures. The PHIC lamellae consisted of a mixture of horizontal and vertical multibilayer structure domains, as observed in the PHIC homopolymer film. The PCL lamellae formed fringed micelle-like crystals and/or highly imperfect folded crystals that differed significantly from the structures found in a PCL homopolymer film composed of typical folded lamellar crystals. These PCL crystals were formed with a mixture of vertical and horizontal orthorhombic lattices. Overall, the GIXS analysis revealed that the parameters that characterized the hierarchical structures in the thin films depended significantly on the number and length of the PCL arm and its crystallization characteristics as well as the chain rigidity and multibilayer structure formation characteristics of the PHIC arm.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/mamobx/2014/mamobx.2014.47.issue-21/ma501695b/production/images/medium/ma-2014-01695b_0011.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ma501695b'>ACS Electronic Supporting Info</A></P>