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양극산화공정을 이용한 금속유연기판 내부배선형성에 관한 공정연구
이태진(T. J Lee),송정한(J. H. Song),이낙규(N. K. Lee),박진호(J. H. Park),이혜진(H. J. Lee) 한국소성가공학회 2011 한국소성가공학회 학술대회 논문집 Vol.2011 No.5
Recently, semiconductor technology has been developed according to the increase of integrated cell, Pin for surface mount signal processing, Die size and high-speed operation. For this reason, IC package technology also has been complicated in order to optimize its function because highly integrated and thinner substrate requirements. And for this reason, Package substrate has caused many problems such as heat sink dissipation, material durability and moisture permeability. To solve this problem, much study has been performed applying Anodic Aluminum Oxide Processing of Top-Down method. But Top-Down method has the disadvantage of many process step using semiconductor process. In this study, We Propose the possibility of a new process method to reduce the process step applying Anodic Aluminum Oxide processing of Bottom-Up method.