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Clinical Practice Guideline for Cardiac Rehabilitation in Korea
Chul Kim,성지동,Jong Hwa Lee,김원석,Goo Joo Lee,Sungju Jee,Il-Young Jung,Ueon Woo Rah,Byung Ok Kim,Kyoung Hyo Choi,Bum Sun Kwon,Seung Don Yoo,Heui Je Bang,Hyung-Ik Shin,김용욱,Heeyoune Jung,Eung Ju Kim,Jung Hw 대한재활의학회 2019 Annals of Rehabilitation Medicine Vol.43 No.3
Objective Though clinical practice guidelines (CPGs) for cardiac rehabilitation (CR) are an effective and widely used treatment method worldwide, they are as yet not widely accepted in Korea. Given that cardiovascular disease is the second leading cause of death in Korea, it is urgent that CR programs be developed. In 2008, the Government of Korea implemented CR programs at 11 university hospitals as part of its Regional Cardio-Cerebrovascular Center Project, and three additional medical facilities will be added in 2019. In addition, owing to the promotion of CR nationwide and the introduction of CR insurance benefits, 40 medical institutions nationwide have begun CR programs even as a growing number of medical institutions are preparing to offer CR. The purpose of this research was to develop evidence-based CPGs to support CR implementation in Korea. Methods This study is based on an analysis of CPGs elsewhere in the world, an extensive literature search, a systematic analysis of multiple randomized control trials, and a CPG management, development, and assessment committee comprised of 33 authors—primarily rehabilitation specialists, cardiologists, and thoracic surgeons in 21 university hospitals and two general hospitals. Twelve consultants, primarily rehabilitation, sports medicine, and preventive medicine specialists, CPG experts, nurses, physical therapists, clinical nutritionists, and library and information experts participated in the research and development of these CPGs. After the draft guidelines were developed, three rounds of public hearings were held with staff members from relevant academic societies and stakeholders, after which the guidelines were further reviewed and modified. Principal Conclusions CR involves a more cost-effective use of healthcare resources relative to that of general treatments, and the exercise component of CR lowers cardiovascular mortality and readmission rates, regardless of the type of coronary heart disease and type and setting of CR. Individualized CR programs should be considered together with various factors, including differences in heart function and lifestyle, and doing so will boost participation and adherence with the CR program, ultimately meeting the final goals of the program, namely reducing the recurrence of myocardial infarction and mortality rates.
Jung, Haesun,Choi, Sungju,Jang, Jun Tae,Yoon, Jinsu,Lee, Juhee,Lee, Yongwoo,Rhee, Jihyun,Ahn, Geumho,Yu, Hye Ri,Kim, Dong Myong,Choi, Sung-Jin,Kim, Dae Hwan Elsevier 2018 Solid-state electronics Vol.140 No.-
<P><B>Abstract</B></P> <P>We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS tests and interface trap extraction, BS instability is explained regardless of either the BS polarity or ambient condition, using a single platform constituted by four key factors: OH<SUP>−</SUP> adsorption/desorption followed by a change in carrier concentration, electron concentration in CNT channel corroborated with H<SUB>2</SUB>O/O<SUB>2</SUB> molecules in ambient, charge trapping/detrapping, and interface trap generation. Under negative BS (NBS), the negative threshold voltage shift (ΔV<SUB>T</SUB>) is dominated by OH<SUP>−</SUP> desorption, which is followed by hole trapping in the interface and/or gate insulator. Under positive BS (PBS), the positive ΔV<SUB>T</SUB> is dominated by OH<SUP>−</SUP> adsorption, which is followed by electron trapping in the interface and/or gate insulator. This instability is compensated by interface trap extraction; PBS instability is slightly more complicated than NBS instability. Furthermore, our model is verified using device simulation, which gives insights on how much each mechanism contributes to BS instability. Our result is potentially useful for the design of highly stable CNT-based flexible circuits in the Internet of Things wearable healthcare era.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We proposed a bias stress induced instability model for CNT FETs in air/vacuum. </LI> <LI> The V<SUB>T</SUB> shift is composed of ad/desorption of OH<SUP>−</SUP>, electron/hole trapping, and D<SUB>it.</SUB> </LI> <LI> We verified our model by using device simulation. </LI> <LI> We provides insight into how much each mechanism contributes to instability. </LI> <LI> Our model is useful for stable flexible circuit designs in wearable healthcare era. </LI> </UL> </P>
Efficient Pre-Bond Testing of TSV Defects Based on IEEE std. 1500 Wrapper Cells
Jung, Jihun,Ansari, Muhammad Adil,Kim, Dooyoung,Park, Sungju The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.2
The yield of 3D stacked IC manufacturing improves with the pre-bond integrity testing of through silicon vias (TSVs). In this paper, an efficient pre-bond test method is presented based on IEEE std. 1500, which can precisely diagnose any happening of TSV defects. The IEEE std. 1500 wrapper cells are augmented for the proposed method. The pre-bond TSV test can be performed by adjusting the driving strength of TSV drivers and the test clock frequency. The experimental results show the advantages of the proposed approach.
On Diagnosing the Aging Level of Automotive Semiconductor Devices
Jung, Jihun,Ansari, Muhammad Adil,Kim, Dooyoung,Yi, Hyunbean,Park, Sungju IEEE 2017 IEEE Transactions on Circuits and Systems II: Expr Vol. No.
<P>Semiconductor aging is a serious threat to the reliability of a system. We address the aging level of semiconductor components by describing the degree of semiconductor aging under certain operating conditions, including voltage, frequency, temperature, and usage rate. Aging level information can be used to follow the real aging rate of a device, predict the remaining life, and control the device performance under certain degradation conditions by balancing the operation of various device components. Such applications can improve the reliability of automotive semiconductor systems, which should have longer lives than mobile systems. In this brief, we present an aging level estimating flip-flop (FF) that can be used for these and other applications as well. Moreover, we can control the operation of the proposed FF by controlling its clock and control signals. We demonstrate an application of the proposed FF for aging-monitoring, showing that, by halting the operation of the proposed FF, the power consumption is significantly reduced compared with other approaches.</P>
Efficient Use of Unused Spare Columns for Reducing Memory Miscorrections
Jihun Jung,Umair Ishaq,Jaehoon Song,Sungju Park 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.3
In the deep sub-micron ICs, growing amounts of on-die memory and scaling effects make embedded memories increasingly vulnerable to reliability and yield problems. Spare columns are often included in memories to repair defective cells or bit lines during production test. In many cases, the repair process will not use all spare columns. Schemes have been proposed to exploit these unused spare columns to store additional check bits which can be used to reduce the miscorrection probability for triple errors in single error correction?double error detection (SEC-DED). These additional check bits increase the dimensions of the parity check matrix (H-matrix) requiring extra area overhead. A method is proposed in this paper to efficiently fill the extra rows of the H-matrix on the basis of similarity of logic between the other rows. Optimization of the whole Hmatrix is accomplished through logic sharing within a feasible operating time resulting in reduced area overhead. A detailed implementation using fuse technology is also proposed in this paper.
이성주 ( Sungju Lee ),정승환 ( Seunghwan Jung ),문대성 ( Daesung Moon ),최성백 ( Sungback Choi ),양성현 ( Sunghyun Yang ),정용화 ( Yongwha Chung ) 한국정보처리학회 2006 한국정보처리학회 학술대회논문집 Vol.13 No.1
생체정보를 이용한 사용자 인증시스템은 편리함과 동시에 강력한 보안을 제공할 수 있다. 그러나 사용자 인증을 위해 저장된 중요한 생체정보가 타인에게 도용된다면 심각한 문제를 일으킨다. 따라서 타인에게 유출되더라도 재사용이 불가능하도록 하기 위하여 사용자의 생체정보에 역변환이 불가능한 함수를 적용하여 저장하고 변환된 상태에서 인증과정을 수행할 수 있는 방법이 필요하다. 본 논문에서는 최근 지문 템플릿(Fingerprint Template)을 보호하기 위해 암호학적 방법으로 연구되어지고 있는 퍼지볼트(Fuzzy Vault) 이론을 이용하여 안전하게 지문 템플릿을 보호하는 방법을 제안한다. 특히, 지문 템플릿에 퍼지볼트 이론을 단순 적용할 경우 기준점 부재로 인하여 야기되는 지문 정렬(alignment) 문제를 해결하기 위하여 기하학적 해싱(Geometric Hashing)방법을 사용하였다. 실험을 통하여 제안한 지문 퍼지볼트(Fuzzy Fingerprints Vault) 기법은 추가적인 정보없이 변환된 도메인에서 자동으로 지문 정렬을 수행하여 안전한 지문 템플릿 보호 및 인증이 가능하다는 것을 확인하였다.
Efficient Pre-Bond Testing of TSV Defects Based on IEEE std. 1500 Wrapper Cells
Jihun Jung,Muhammad Adil Ansari,Dooyoung Kim,Sungju Park 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.2
The yield of 3D stacked IC manufacturing improves with the pre-bond integrity testing of through silicon vias (TSVs). In this paper, an efficient pre-bond test method is presented based on IEEE std. 1500, which can precisely diagnose any happening of TSV defects. The IEEE std. 1500 wrapper cells are augmented for the proposed method. The pre-bond TSV test can be performed by adjusting the driving strength of TSV drivers and the test clock frequency. The experimental results show the advantages of the proposed approach.
Choi, Sungju,Kim, Seohyeon,Jang, Jungkyu,Ahn, Gumho,Jang, Jun Tae,Yoon, Jinsu,Park, Tae Jung,Park, Byung-Gook,Kim, Dong Myong,Choi, Sung-Jin,Lee, Seung Min,Kim, Eun Young,Mo, Hyun Sun,Kim, Dae Hwan Elsevier Sequoia 2019 Sensors and actuators. B Chemical Vol.296 No.-
<P><B>Abstract</B></P> <P>In this study, we implement an artificial synapse and neuron in a single platform by combining a silicon nanowire (SiNW) ion-sensitive field-effect transistor (ISFET), an indium-gallium-zinc-oxide (IGZO) memristor, and a voltage-controlled oscillator (VCO). The chemical and electrical operations of the synapse are emulated using the pH sensor operation of the ISFET and long-term potentiation/short-term plasticity of the IGZO memristor, respectively. The concentration of hydrogen ions in an electrolyte is successfully transformed via a VCO-based neuron into modulation of synaptic strength, i.e., the current of the memristor. It mimics the strength of the synaptic connection modulated by the concentration of the neurotransmitter. Thus, the chemical-electrical signal conversion in chemical synapses is clearly demonstrated. Furthermore, the proposed artificial platform can discriminate the chemical synapse from the electrical synapse and the path of the neuro-signal propagation and that of memorization/update of synaptic strength. This can potentially provide a new insight into the principles of brain-inspired computing that can overcome the bottleneck of the state-of-the-art von-Neumann computing systems.</P>