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Oh, Sung-Kwen,Shin, Hong-Sik,Jeong, Kwang-Seok,Li, Meng,Lee, Horyeong,Han, Kyumin,Lee, Yongwoo,Lee, Ga-Won,Lee, Hi-Deok The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.1
In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.
A Novel Atomic Layer Deposited Al₂O₃ Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell
Sung-Kwen Oh,Hong-Sik Shin,Kwang-Seok Jeong,Meng Li,Horyeong Lee,Kyumin Han,Yongwoo Lee,Ga-Won Lee,Hi-Deok Lee 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
In this paper, Al2O3 film deposited by thermal atomic layer deposition (ALD) with diluted NH4OH instead of H2O was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of Al2O3 film was proportional to the NH4OH concentration. Al2O3 film deposited with 5 % NH4OH has the greatest negative fixed oxide charge density (Qf), which can be explained by aluminum vacancies (VAl) or oxygen interstitials (Oi) under O-rich condition. Al2O3 film deposited with NH4OH 5 % condition also shows lower interface trap density (Dit) distribution than those of other conditions. At NH4OH 5 % condition, moreover, Al2O3 film shows the highest excess carrier lifetime (τPCD) and the lowest surface recombination velocity (Seff), which are linked with its passivation properties. The proposed Al2O3 film deposited with diluted NH4OH is very promising for passivation layer and AR coating of the p-type c-Si solar cell.
Sung-Kwen Oh,Hong-Sik Shin,Kwang-Seok Jeong,Meng Li,Horyeong Lee,Kyumin Han,Yongwoo Lee,Ga-Won Lee,Hi-Deok Lee 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.6
This paper presents a study of the process temperature dependence of Al₂O₃ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of Al₂O₃ film maintained almost the same until 250 ℃, but decreased from 300 ℃. Al₂O₃ film deposited at 250 ℃ was found to have the highest negative fixed oxide charge density (Qf) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), Al₂O₃ film deposited at 250 ℃ had the lowest slow and fast interface trap density. Actually, Al₂O₃ film deposited at 250 ℃ showed the best passivation effects, that is, the highest excess carrier lifetime (τPCD) and lowest surface recombination velocity (Seff) than other conditions. Therefore, Al₂O₃ film deposited at 250 ℃ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.
Oh, Sung-Kwen,Shin, Hong-Sik,Jeong, Kwang-Seok,Li, Meng,Lee, Horyeong,Han, Kyumin,Lee, Yongwoo,Lee, Ga-Won,Lee, Hi-Deok The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.6
This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.
Kwen, Hai-Doo,Oh, Sang-Hyub,Choi, Seong-Ho American Scientific Publishers 2012 Journal of Nanoscience and Nanotechnology Vol.12 No.7
<P>An ECL sensor was fabricated by immobilization of a tris(2,2'-bipyridyl)ruthenium (II) complex (Ru(bpy)3(2+)) to an amine group-modified GC electrode (NH2-GC electrode). Here, the NH2-GC electrode was prepared by electrochemical reduction of a nitro group-modified GC electrode in 0.1 M KCl ethanol solution under H2 gas, which was followed by electrochemical grafting of 4-nitrophenyl diazonium salts in 0.1 M NBu4BF4 acetonitrile solution onto the GC electrode. The prepared ECL sensor was successfully confirmed via cyclic voltammetry, contact angle, scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), and ECL spectrometry. The contact angle for the surface of the GC electrode, NO2-GC electrode, and NH2-GC electrod was 88.4 degrees, 67.4 degrees, and 52.4 degrees, respectively. The stability of the ECL sensor was investigated under continuous cyclic potential scanning for 55 cycles and the ECL intensity remained at 55%. The prepared ECL electrode can be expected to immobilize enzymes for preparation of the ECL biosensor to detect target molecules.</P>
Li, Meng,Oh, Sung-Kwen,Shin, Hong-Sik,Lee, Hi-Deok The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.3
In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.
송병권(Byung-Kwen Song),오태안(Tae-an Oh),이상구(Sang-ku Lee) 한국정보과학회 2000 한국정보과학회 학술발표논문집 Vol.27 No.2Ⅲ
최근 무선 인터넷 서비스에 대한 관심이 고조되면서 관련 기술 개발이 활발히 진행되고 있다. 현재 가장 유력한 국제표준 중 하나로 인식되어 가고 있는 WAP(Wireless Application Protocol)의 규격에 따르면 이동 단말과 WAP 서버는 WAP Gateway를 통하여 통신하도록 되어있다. 본 논문은 리눅스 기반에서 WAP Gateway와 Server가 통합적으로 지원되는 IWAP 플랫폼의 설계 및 구현에 것이다. 제안된 IWAP 플랫폼은 WAP Gateway, JAVA 기반의 Server 개발 환경, WML Tool-Kit 및 MUI(Management User Interface)등 크게 4개의 모듈로 구성되고, 베어러(bearer) 망으로 SMSC(Short Message Service Center)나 CSD(Circuit Switched Data) 라우터를 고려하였다.
Meng Li,Sung-Kwen Oh,Hong-Sik Shin,Hi-Deok Leeg 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.3
In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.
Li, Meng,Shin, Hong-Sik,Jeong, Kwang-Seok,Oh, Sung-Kwen,Lee, Horyeong,Han, Kyumin,Lee, Yongwoo,Lee, Song-Jae,Lee, Ga-Won,Lee, Hi-Deok Institute of Pure and Applied Physics 2014 Japanese Journal of Applied Physics Vol. No.
<P>H2O or NH4OH (5%) precursor pretreatment in the chamber was carried out before the thermal atomic layer deposition (ALD) of an Al2O3 passivation layer on p-type crystal Si. It was found that the density of negative oxide fixed charges significantly increased, the Al-O combination at the interface changed, the Al/O atomic at the interface of Al2O3/Si decreased, and the effective lifetime increased. The pretreated samples with changes in the Al-O structure at the interface, which made the interface more oxygen-rich, were believed to be the reason for the improvement of the field effect passivation in Al2O3 passivated crystal Si solar cell applications. (C) 2014 The Japan Society of Applied Physics</P>