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Sokolov, Andrey Sergeevich,Jeon, Yu-Rim,Kim, Sohyeon,Ku, Boncheol,Lim, Donghwan,Han, Hoonhee,Chae, Myeong Gyoon,Lee, Jaeho,Ha, Beom Gil,Choi, Changhwan Elsevier 2018 APPLIED SURFACE SCIENCE - Vol.434 No.-
<P><B>Abstract</B></P> <P>We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO<SUB>2-x</SUB> thin films by reducing oxidant pulse time (0.7 s–0.1 s) and study its effect on resistive switching behavior with a Ti/HfO<SUB>2-x</SUB>/Pt structure. Hf 4f spectra of x-ray photoelectron microscopy (XPS) and depth profile confirm varied oxygen vacancies profiles by shifts of binding energies of Hf 4f5/2 and Hf 4f7/2 main peaks and its according HfO<SUB>2-x</SUB> sub-oxides for each device. The ultraviolet photoelectron spectroscopy (UPS) confirms different electron affinity (χ) of HfO<SUB>2</SUB> and HfO<SUB>2-x</SUB> thin films, implying that barrier height at Ti/oxide interface is reduced. Current transport mechanism is dictated by Ohmic conduction in fully oxidized HfO<SUB>2</SUB> thin films - Device A (0.7 s) and by Trap Filled Space Charge Limited Conduction (TF-SCLC) in less oxidized HfO<SUB>2-x</SUB> thin films - Device B (0.3 s) and Device C (0.1 s). A switching mechanism related to the oxygen vacancies modulation in Ti/HfO<SUB>2-x</SUB>/Pt based resistive random access memory (RRAM) devices is used to explain carefully notified current transport mechanism variations from device-to-device. A proper endurance and long-time retention characteristics of the devices are also obtained.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Oxygen vacancies in ALD HfO<SUB>x</SUB> thin film were modulated by varying oxidant pulse time. </LI> <LI> Resistive switching behaviors are governed by connection/disruption of filament via reduction/oxidation. </LI> <LI> Conduction mechanism clearly depends on amount of oxygen vacancies. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Measurement of the branching fraction for the decayΥ(4S)→Υ(1S)π+π−
Sokolov, A.,Shapkin, M.,Aihara, H.,Arinstein, K.,Aushev, T.,Bakich, A. M.,Barberio, E.,Bay, A.,Belous, K.,Bhardwaj, V.,Bondar, A.,Brač,ko, M.,Browder, T. E.,Chang, M.-C.,Chang, P.,Chen, A.,Chen, American Physical Society 2009 PHYSICAL REVIEW D - Vol.79 No.5
Improvement of the diagnostics and treatments neurological sick on base information technology
Sokolov V.K.,Nazarov A.I.,Umarova F.T. 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
Our offers are concluded in that to accumulated on concrete the profession of doctor (for instance, neurologies) encyclopedic knowledges to pawn in modern computer and with corresponding to mathematical (programme) by provision and infocommunication relationships to send him in help doctor polyclinics or permanent establishment.
Factors and Tendencies in the Development of Protest Activities in Russia
( Aleksandr Sokolov ) 한국외국어대학교 러시아연구소 2012 슬라브연구 Vol.28 No.2
The paper considers the protest activity in Russia. The research conducts the survey data experts from 22 regions of Russia. The article examines the growth dynamics of protest activity. The author identifies the causes and factors of protest activity. The article highlighted the regional characteristics of protest activity. The influence of acts and omissions of the authorities on the formation and development of protest activity is characterized. The paper is assessment of the prospects of protest activity in the country.
Abbas, Yawar,Sokolov, Andrey Sergeevich,Jeon, Yu-Rim,Kim, Sohyeon,Ku, Boncheol,Choi, Changhwan Elsevier 2018 JOURNAL OF ALLOYS AND COMPOUNDS Vol.759 No.-
<P><B>Abstract</B></P> <P>We have demonstrated the co-existence of reliable analog and digital switching characteristics with tantalum oxide based memristor by appropriate rapid thermal annealing (RTA). The device without RTA exhibits a digital SET and multilevel RESET for positive and negative sweeps, respectively. On the other hands, the device shows only analog switching characteristics such that current level increases and decreases gradually for successive positive and negative voltage sweeps, respectively, before any electroforming process with the RTA in the nitrogen ambient at the crystalline temperature of tantalum oxide which is 700 °C for 60 s. Once electroforming process is done, the device exhibits a reliable digital switching with SET at positive sweep and RESET at negative sweep voltages. In the analog state of the device we successfully emulate the synaptic characteristic of the device like spike-rate dependent plasticity (SRDP), pulse-paired facilitation (PPF) and post-tetanic potentiation (PTP). Finally, the Hermann Ebbinghaus forgetting curve is obtained from these devices. The conversion of the device from the digital SET and multilevel RESET to analogue switching is attributed to structural transition of amorphous tantalum oxide to polycrystalline tantalum oxide, different defect density and interface variation in the device.</P> <P><B>Highlights</B></P> <P> <UL> <LI> N<SUB>2</SUB> at 700 °C rapid thermal annealing (RTA) was carried out on the sputtered Ta<SUB>2</SUB>O<SUB>5</SUB>. </LI> <LI> RTA makes structural change from amorphous to polycrystalline state leading to pseudo-switching characteristics. </LI> <LI> Gradual change of current and conductance with RTA processed Ta<SUB>2</SUB>O<SUB>5-x</SUB> thin film is favorable for synaptic behaviors. </LI> </UL> </P>
Ku, Boncheol,Abbas, Yawar,Sokolov, Andrey Sergeevich,Choi, Changhwan Elsevier 2018 JOURNAL OF ALLOYS AND COMPOUNDS Vol.735 No.-
<P><B>Abstract</B></P> <P>The improved resistive switching (RS) characteristics of Pt/HfO<SUB>2</SUB>/Ti structured RRAM are demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma treatment was intentionally carried out on the surface of atomic layer deposited (ALD) HfO<SUB>2</SUB> thin films to modulate the conducting filament size affecting RS behaviors. Compared to ALD HfO<SUB>2</SUB> RRAM without Ar plasma treatment, the Ar plasma treatment on the surface of ALD HfO<SUB>2</SUB> thin film leads to forming-free process, faster switching speed, tighter low resistance state (LRS) and high resistance state (HRS) current distribution, smaller variations of SET voltage and RESET voltage, and enhanced retention/endurance characteristics under HRS. These improvements are believed to be the generation of favorably modulated interface oxide layer between HfO<SUB>2</SUB> and Ti. In addition, current conduction mechanism is dominated by ohmic behavior in LRS while ohmic, space charge limited conduction (SCLC), and trap filled SCLC are observed at HRS with different field regions. The Ar plasma irradiation can be an easy and facile way to achieve the reliable and uniform RRAM characteristics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Argon plasma irradiation was conducted on the ALD HfO<SUB>2</SUB>. </LI> <LI> Ar plasma treatment produces faster switching, uniform and reliable resistive switching behaviors. </LI> <LI> Improved reliability depends on interface reaction at Ti/HfO<SUB>2</SUB>. </LI> </UL> </P>