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Improvement of the diagnostics and treatments neurological sick on base information technology
Sokolov V.K.,Nazarov A.I.,Umarova F.T. 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
Our offers are concluded in that to accumulated on concrete the profession of doctor (for instance, neurologies) encyclopedic knowledges to pawn in modern computer and with corresponding to mathematical (programme) by provision and infocommunication relationships to send him in help doctor polyclinics or permanent establishment.
Measurement of the branching fraction for the decayΥ(4S)→Υ(1S)π+π−
Sokolov, A.,Shapkin, M.,Aihara, H.,Arinstein, K.,Aushev, T.,Bakich, A. M.,Barberio, E.,Bay, A.,Belous, K.,Bhardwaj, V.,Bondar, A.,Brač,ko, M.,Browder, T. E.,Chang, M.-C.,Chang, P.,Chen, A.,Chen, American Physical Society 2009 PHYSICAL REVIEW D - Vol.79 No.5
Measurement of theτ-lepton Lifetime at Belle
Belous, K.,Shapkin, M.,Sokolov, A.,Adachi, I.,Aihara, H.,Asner, D. M.,Aulchenko, V.,Bakich, A. M.,Bala, A.,Bhuyan, B.,Bobrov, A.,Bondar, A.,Bonvicini, G.,Bozek, A.,Brač,ko, M.,Browder, T. E., American Physical Society 2014 Physical Review Letters Vol.112 No.3
Jang, L.W.,Jeon, D.W.,Polyakov, A.Y.,Govorkov, A.V.,Sokolov, V.N.,Smirnov, N.B.,Cho, H.S.,Yun, J.H.,Shcherbatchev, K.D.,Baek, J.H.,Lee, I.H. Elsevier Sequoia 2014 JOURNAL OF ALLOYS AND COMPOUNDS Vol.589 No.-
Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE-PECE treatment. Overgrowth of LED structures on the ECE-PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.