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김우정,조용수,황정훈,최시영 한국센서학회 2002 센서학회지 Vol.11 No.3
스테인레스 봉입형 압력센서를 제작하기 위하여 먼저 반도체 제조 및 식각 공정을 통하여 반도체 압력센서를 제작하였다. 그리고 이를 glass molding된 스테인레스 housing에 올려놓고 50 ㎛ 두께의 스테인레스 박판을 용접한 후 실리콘 오일을 채워 넣고 봉입하여 압력 범위 10 bar 센서를 완성하였다. 이와 같이 제작한 센서와 XTR105 발신기 전용 회로를 결합하여 4~20 mA 출력의 압력 발신기를 제작하고 그 특성을 조사하였다. 온도 보상 전 정확도는 ±5% FS이었으나 보상 후 정확도 ±1% FS로 개선되었다. The silicon piezoresistive pressure sensor is made by semiconductor process to obtain stainless steel isolated type pressure sensor. The sensor is loaded on a stainless steel housing with glass molding, 50 ㎛ stainless steel thin film is welded, and the stainless steel housing encapsulated by silicone oil. The performance of fabricated the pressure sensor has 10 bar pressure range. The XTR105 of exclusive transmitter chip is used the pressure transmitter that output current is 4 - 20mA. The accuracy is ±5% FS, however, the accuracy is ±1% FS when the sensor is compensated temperature.
A tunable photonic microwave notch filter using a multiple wavelength optical source
Choi, Yong-Kyu,Jeon, Sie-Wook,Kim, Youngbok,Keun Oh, Choong,Park, Chang-Soo Wiley Subscription Services, Inc., A Wiley Company 2010 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Vol.52 No.1
<P>We propose a tunable photonic microwave notch filter using a multi-wavelength optical source. Two peak wavelengths are generated using a reflective semiconductor optical amplifier (RSOA) self-injection, locked by two external fiber Bragg gratings (FBGs). The time delay required for the notch filter is obtained based on the wavelength-dependent propagation velocity through the fiber. The tunable filter characteristic is obtained by changing the center wavelength of one of the gratings and its tunability is limited only by the gain profile of the RSOA and the tuning range of the grating. Based on the proposed structure, a two-tap microwave notch filter with free spectral range tunable from 1.15 to 5.79 GHz is experimentally demonstrated. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 134–138, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24841</P>
이용현,최시영 경북대학교 전자기술연구소 1980 電子技術硏究誌 Vol.1 No.1
The characteristics of the electric resistance against RH (Relative Humidity) have been investigated for Cr₂O₃ and Fe₂O₃ based sensors with various additives such as Sb₂O₃, ZrO₂, NiO, Na₂CO₃, BaCO₃, Fe₂O₃, MgO and TiO₂. The electric resistance of the (Fe₂O₃)_(0.98)(Na₂CO₃)_(0.02) humidity sensor varied linearly in semilogarithmic scale from 2.0×10^(10)Ω to 5.0×10^5Ω as RH varied from 20% to 90%. But this device was not useful as a humidity sensor because of the large variation of resistance by the applied voltage and the environmental temperature. The electric resistance of the (MgCr₂O₄)_(0.98)(TiO₂)_(0.02) humidity sensor varied linearly in semilogarithmic scale from 8.0×10^9Ω to 4.0×10^5Ω as RH varied from 20% to 90%. This device was useful as a humidity sensor because of the small variation of resistance by the applied voltage and the environmental temperature. The moisture absorption and desorption time constant were 15 and 30 seconds,
수중 수소 감지를 위한 MISFET 형 센서제작과 그 특성
손승현,조용수,최시영 한국센서학회 2000 센서학회지 Vol.9 No.2
In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.
Gold-Black 게이트를 이용한 MOSFET형 단백질 센서의 제조 및 특성
김민석 ( Min Suk Kim ),박근용 ( Keun Yong Park ),김기수 ( Ki Soo Kim ),김홍석 ( Hong Seok Kim ),배영석 ( Young Seuk Bae ),최시영 ( Sie Young Choi ) 한국센서학회 2005 센서학회지 Vol.14 No.3
N/A Research in the field of biosensor has enormously increased over the recent years. The metal-oxide semiconductor field effect transistor (MOSFET) type protein sensor offers a lot of potential advantages such as small size and weight, the possibility of automatic packaging at wafer level, on-chip integration of biosensor arrays, and the label-free molecular detection. We fabricated MOSFET protein sensor and proposed the gold-black electrode as the gate metal to improve the response. The experimental results showed that the output voltage of MOSFET protein sensor was varied by concentration of albumin proteins and the gold-black gate increased the response up to maximum 13 % because it has the larger surface area than that of planar-gold gate. It means that the expanded gate allows a larger number of ligands on same area, and makes the more albumin proteins adsorbed on gate receptor.