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Preparation of IrO2 Thin Films by MOCVD Using Ir(EtCp)(CHD)
H. Fujisawa,S. Watari,H. Niu,M. Shimizu,N. Oshima 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
We report on MOCVD of IrO2 thin lms by using liquid Ir precursor, Ir(EtCp)(CHD). IrO2 lms were successfully grown on SiO2/Si, Ti/SiO2/Si and Pb(Zr,Ti)O3/Pt/SiO2/Si at 400C and oxygen concentration of as high as 77 %. IrO2 lms prepared on SiO2/Si with and without surfaceoxidizedIr seeds exhibited an electrical resistivity of 103 cm, and a root-mean-square surface roughness of 5 nm. IrO2 lms showed step coverages of 40-50%on SiO2-stepped substrate with L/S (line and space) of 0.7/3.6 and 1.4/2.9 m.
Analysis of Radial Air-shear Force on Magnetic Disks for Reducing the Spin-off of Lubricants
M. KURITA,H. SHIMIZU,M. MIZUMOTO,Y. OOTANI 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
To reduce the spin-off of lubricants on a magnetic disk, which is caused by the radial component of shear force between the disk and air, we analyzed the air-velocity distribution and the air-shear force by three-dimensional large-eddy simulation (LES). This sensitivity analysis, on five design parameters, showed that disk/arm clearance and ann thickness have a greater effect on the mean radial air-shear force than the other parameters. The force on a disk optimized according to the optimum parameters is 12% less than the force on a conventional disk.
M. Shimizu,Y. Ohsawa,H. Yoda,S. Shirotori,B. Altansargai,N. Shimomura,Y. Kato,S. Oikawa,H. Sugiyama,T. Inokuchi,K. Koi,M. Ishikawa,K. Ikegami,A. Kurobe Korean Magnetics Society 2018 Journal of Magnetics Vol.23 No.4
A voltage-control spintronics memory (VoCSM) which has a potential of low energy consumption uses the spin-Hall effect (SHE) and the voltage-controlled magnetic anisotropy (VCMA) effect for its write operation. In this work, the relationship between the critical switching current (Icsw) and the SHE electrode thickness (tN) is investigated in the range of 5 nm < tN < 8 nm. In the fabrication process, we develop highly-selective patterning process to stop MTJ etching precisely on the surface of the SHE electrode. Using the technique, Icsw is reduced by half as tN is varied from 8 nm to 5 nm, and Icsw of 112 mA at 20 ns write current pulse is obtained for MTJ size of 50 × 150 nm2 on Ta(2 nm)/TaB (3 nm) electrode. The results indicate that the decrease in the SHE electrode thickness is a promised method to reduce Icsw, which leads VoCSM to a low-energy-consumption device.
Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD
M. Shimizu,H. Niu,H. Fujisawa,K. Kita,M. Okaniwa 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
Low-temperature MOCVD of Pb(Zr,Ti)O3 (PZT) thin lms and Ir lms was achieved. Using seed layer method and appropriate source gas combination method, PZT thin lms were successfully grown at 390-445 C. Ir thin lms as electrodes were also prepared at 280-350 C. Combining low-temperature MOCVD of PZT thin lms as a ferroelectric layer and Ir as an electrode, PZT capacitors with Ir electrodes were prepared solely by MOCVD. Even when PZT was deposited at low temperatures, 395 C and 445 C, PZT capacitors showed good D-E hysteresis loops with 2Pr of 20.0 C/cm2 and 36.9 C/cm2, respectively.