http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Genome-wide association study of recalcitrant atopic dermatitis in Korean children
Kim, K.W.,Myers, R.A.,Lee, J.H.,Igartua, C.,Lee, K.E.,Kim, Y.H.,Kim, E.J.,Yoon, D.,Lee, J.S.,Hirota, T.,Tamari, M.,Takahashi, A.,Kubo, M.,Choi, J.M.,Kim, K.E.,Nicolae, D.L.,Ober, C.,Sohn, M.H. Mosby 2015 The Journal of allergy and clinical immunology Vol.136 No.3
Background: Atopic dermatitis (AD) is a heterogeneous chronic inflammatory skin disease. Most AD during infancy resolves during childhood, but moderate-to-severe AD with allergic sensitization is more likely to persist into adulthood and more often occurs with other allergic diseases. Objective: We sought to find susceptibility loci by performing the first genome-wide association study (GWAS) of AD in Korean children with recalcitrant AD, which was defined as moderate-to-severe AD with allergic sensitization. Methods: Our study included 246 children with recalcitrant AD and 551 adult control subjects with a negative history of both allergic disease and allergic sensitization. DNA from these subjects was genotyped; sets of common single nucleotide polymorphisms (SNPs) were imputed and used in the GWAS after quality control checks. Results: SNPs at a region on 13q21.31 were associated with recalcitrant AD at a genome-wide threshold of significance (P < 2.0 x 10<SUP>-8</SUP>). These associated SNPs are more than 1 Mb from the closest gene, protocadherin (PCDH)9. SNPs at 4 additional loci had P values of less than 1 x 10<SUP>-6</SUP>, including SNPs at or near the neuroblastoma amplified sequence (NBAS; 2p24.3), thymus-expressed molecule involved in selection (THEMIS; 6q22.33), GATA3 (10p14), and S-phase cyclin A-associated protein in the ER (SCAPER; 15q24.3) genes. Further analysis of total serum IgE levels suggested 13q21.31 might be primarily an IgE locus, and analyses of published data demonstrated that SNPs at the 15q24.3 region are expression quantitative trait loci for 2 nearby genes, ISL2 and proline-serine-threonine phosphatase interacting protein 1 (PSTPIP1), in immune cells. Conclusion: Our GWAS of recalcitrant AD identified new susceptibility regions containing genes involved in epithelial cell function and immune dysregulation, 2 key features of AD, and potentially extend our understanding of their role in pathogenesis.
Structural Basis for Depletion of Heat Shock Protein 90 Client Proteins by Deguelin
Oh, S. H.,Woo, J. K.,Yazici, Y. D.,Myers, J. N.,Kim, W.-Y.,Jin, Q.,Hong, S. S.,Park, H.-J.,Suh, Y.-G.,Kim, K.-W.,Hong, W. K.,Lee, H.-Y. U.S. Dept. of Health, Education, and Welfare, Publ 2007 Journal of the National Cancer Institute Vol.99 No.12
Myers, Lara,Lee, Seung Woo,Rossi, Robert J.,Lefrancois, Leo,Kwon, Byoung S.,Mittler, Robert S.,Croft, Michael,Vella, Anthony T. Oxford University Press 2006 International immunology Vol.18 No.2
<P>In practice, vaccines should induce lasting and efficacious T cell immunity without promoting deleterious pathological consequences. To accomplish this goal we immunized mice with ovalbumin peptide, polyinosinic–polycytidylic and anti-CD137. Vaccinated mice retained a massive functional CD8 T cell memory pool in lymphoid and non-lymphoid tissues for >1 year. The memory T cells clonally expanded, produced substantial amounts of IFNγ, and responded vigorously to vesicular stomatitis virus infection. To understand how the vaccine might function, we showed that the antigen-specific T cells must bear CD137 in order for optimal priming to occur. Thus, anti-CD137 agonist mAb directly stimulated peptide-specific CD8 T cells and conditioned them to survive. In contrast, CD137-deficient CD8 T cells did not survive despite CD137 expression by antigen presenting cells. Taken together, the data indicate that CD137 and adjuvant combined therapy is an efficacious vaccine strategy for immunization with non-replicating inert antigen.</P>
김하술,S. Myers,B. Klein,A. Kazemi,S. Krishna,Jun Oh Kim,이상준 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.4
The dark current of a type-II InAs/GaSb strained layer superlattice photodiode with an n-i-pstructure is reduced by using an active gate bias technique. To make the gate structure on themesa sidewall of the photodiode, we used Si3N4 and Ti/Au as a dielectric film and a gate metal,respectively. At 77 K, the dark current density of the photodiode with a gate bias (VG = −30 V)applied on the mesa side wall is reduced by more than one order of magnitude compared to the darkcurrent density at zero gate bias. At 77 K, the product of the dynamic differential resistance andthe area at a gate bias of −30 V shows a 12 times improvement compared to the same measurementat zero gate bias.