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An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology
윤대근,송기룡,Mehmet Kaynak,Bernd Tillack,이재성 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.
An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology
Yoon, Daekeun,Song, Kiryong,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.
An Oscillator and a Mixer for 140-㎓ Heterodyne Receiver Front-End based on SiGe HBT Technology
Daekeun Yoon,Kiryong Song,Mehmet Kaynak,Bernd Tillack,Jae-Sung Rieh 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 ㎓ based on SiGe HBT technology. Firstly, a 123-㎓ oscillator was developed based on Colpitts topology, which showed - 5 ㏈m output power and phase noise of -107.34 ㏈c/㎐ at 10 ㎒. DC power dissipation was 25.6 ㎽. Secondly, a 135 ㎓ mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 ㏈ at 1 ㎓ IF at fixed LO frequency of 134 ㎓. DC power dissipation was 3 ㎽, which mostly comes from the buffer.
A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz
유정환,김정수,윤종원,Kaynak Mehmet,이재성 한국전자파학회 2022 Journal of Electromagnetic Engineering and Science Vol.22 No.2
This work describes the development of an amplifier frequency doubler chain (AFDC) operating at around 300 GHz based on SiGe BiCMOS technology. The driver amplifier is based on the differential cascode configuration, which employs coupled-line transformers for compact design. The frequency doubler is based on the class-B topology, which is known for exhibiting a large output power with low DC power consumption. The integrated AFDC, which consists of the frequency doubler and the preceding driver amplifier, exhibited a measured peak output power and DC-to-RF efficiency of -0.9 dBm and 0.97%, respectively, along with a conversion gain of -0.1 dB. It operates from 284 to 328 GHz with a 0-dBm input signal, consuming a total DC power of only 84 mW. The chip size is 720 × 310 μm2, excluding RF and DC pads.
Indocyanine green angiography of retinal astrocytomas associated with tuberous sclerosis
Nilufer Koak,Ali Osman Saatci,Suleyman Kaynak,Mehmet Hilmi Ergin,Guray Cray Ingil 대한안과학회 2003 Korean Journal of Ophthalmology Vol.17 No.2
As small astrocytic hamartomas can sometimes be missed during routine ophthalmoscopy in patients with tuberous sclerosis, fluorescein and/-or indocyanine green angiography maybe more helpful in identifying such small astrocytomas. In fluorescein angiography, astrocytomas show gradually increasing hyperfluorescence due to the vascular permeability of astrocytomas. In indocyanine green angiography, astrocytomas appear hypocyanescent, most prominently during the late phases. We report the indocyanine green angiographic findings of retinal astrocytomas in a patient with tuberous sclerosis.
300-GHz Direct and Heterodyne Active Imagers Based on 0.13-μm SiGe HBT Technology
Yoon, Daekeun,Kim, Jungsoo,Yun, Jongwon,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung IEEE 2017 IEEE transactions on terahertz science and technol Vol.7 No.5
<P>300-GHz direct and heterodyne imagers based on a 0.13-mu m SiGe HBT technology were developed for active imaging applications in this work. The direct imager, which is based on the square-law principle, shows a maximum responsivity of 6121 V/W and a minimum noise equivalent power (NEP) of 21.2 pW/Hz(1/2) at 315 GHz. The heterodyne imager, which consists of a mixer, a local oscillator, an IF amplifier, and an IF detector, exhibits a maximum responsivity of 322 kV/W and a minimum NEP of 3.9 pW/Hz(1/2) at 300 GHz. Total dc power consumption of the direct imager is 0.6 mW, while the heterodyne imager consumes 21 mW. The chip areas of the direct and heterodyne imagers including the on-chip antenna are 460 x 410 and 610 x 610 mu m(2), respectively. To compare the performance of the two types of imagers for imaging applications, images from both imagers were acquired and compared with various output power levels of the signal source. It was demonstrated that the heterodyne imager shows much better image quality, especially when the signal source power is not sufficiently high.</P>
Two 320 GHz Signal Sources Based on SiGe HBT Technology
Yun, Jongwon,Yoon, Daekeun,Jung, Seungyoon,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung THE INSTITUTE OF ELECTRICAL ENGINEERS 2015 IEEE Microwave and Wireless Components Letters Vol. No.
<P>Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a <TEX>$G_{{m}}$</TEX>-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of <TEX>${-}6.3$</TEX> dBm and a phase noise of <TEX>${-}96.6$</TEX> dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and <TEX>${-}94.7$</TEX> dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.</P>
Kim, Jungsoo,Yoon, Daekeun,Yun, Jongwon,Song, Kiryong,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung IEEE 2018 IEEE transactions on terahertz science and technol Vol.8 No.5
<P>In this paper, three-dimensional (3-D) terahertz (THz) tomography was demonstrated with a signal source and imagers based on transistor circuits fabricated with standard semiconductor technologies. For the signal source, a 300-GHz oscillator based on InP HBT technology was employed. For detection, two types of imagers operating near 300 GHz were employed, one direct and the other heterodyne, both realized with SiGe HBT technology. With a set of 2-D images taken from different angles, sinograms and tomograms were obtained, which led to a successful reconstruction of 3-D images of the target object based on the filtered back-projection algorithm. A systematic comparison was made for the direct imager and the heterodyne imager, for which the signal input power and the video bandwidth were varied for both imagers. The results revealed that the heterodyne imager shows a better sensitivity than the direct imager. However, a similar dynamic range of around 30 dB was achieved for both imagers because of a saturation observed for the heterodyne imager when the input power exceeds the threshold. The video bandwidth did not affect the image quality significantly for the bandwidth variation over four orders of magnitude for both imagers.</P>
CMOS-compatible batch processing of monolayer MoS<sub>2</sub> MOSFETs
Xiong, Kuanchen,Kim, Hyun,Marstell, Roderick J,Gö,ritz, Alexander,Wipf, Christian,Li, Lei,Park, Ji-Hoon,Luo, Xi,Wietstruck, Matthias,Madjar, Asher,Strandwitz, Nicholas C,Kaynak, Mehmet,Lee, Young IOP 2018 Journal of Physics. D, Applied Physics Vol.51 No.15
<P>Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS<SUB>2</SUB> with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS<SUB>2</SUB> and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS<SUB>2</SUB> MOSFETs, whether the MoS<SUB>2</SUB> was grown by a thin-film process or exfoliated from a bulk crystal.</P>