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300-GHz Direct and Heterodyne Active Imagers Based on 0.13-μm SiGe HBT Technology
Yoon, Daekeun,Kim, Jungsoo,Yun, Jongwon,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung IEEE 2017 IEEE transactions on terahertz science and technol Vol.7 No.5
<P>300-GHz direct and heterodyne imagers based on a 0.13-mu m SiGe HBT technology were developed for active imaging applications in this work. The direct imager, which is based on the square-law principle, shows a maximum responsivity of 6121 V/W and a minimum noise equivalent power (NEP) of 21.2 pW/Hz(1/2) at 315 GHz. The heterodyne imager, which consists of a mixer, a local oscillator, an IF amplifier, and an IF detector, exhibits a maximum responsivity of 322 kV/W and a minimum NEP of 3.9 pW/Hz(1/2) at 300 GHz. Total dc power consumption of the direct imager is 0.6 mW, while the heterodyne imager consumes 21 mW. The chip areas of the direct and heterodyne imagers including the on-chip antenna are 460 x 410 and 610 x 610 mu m(2), respectively. To compare the performance of the two types of imagers for imaging applications, images from both imagers were acquired and compared with various output power levels of the signal source. It was demonstrated that the heterodyne imager shows much better image quality, especially when the signal source power is not sufficiently high.</P>
An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology
Yoon, Daekeun,Song, Kiryong,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.
An Oscillator and a Mixer for 140-㎓ Heterodyne Receiver Front-End based on SiGe HBT Technology
Daekeun Yoon,Kiryong Song,Mehmet Kaynak,Bernd Tillack,Jae-Sung Rieh 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 ㎓ based on SiGe HBT technology. Firstly, a 123-㎓ oscillator was developed based on Colpitts topology, which showed - 5 ㏈m output power and phase noise of -107.34 ㏈c/㎐ at 10 ㎒. DC power dissipation was 25.6 ㎽. Secondly, a 135 ㎓ mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 ㏈ at 1 ㎓ IF at fixed LO frequency of 134 ㎓. DC power dissipation was 3 ㎽, which mostly comes from the buffer.
Daekeun Yoon,Jongwon Yun,Jae-Sung Rieh IEEE 2015 IEEE transactions on terahertz science and technol Vol.5 No.4
<P>A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-mu m InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was -6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was -86.55 at 10-MHz offset. The circuit occupies only 0.014 mm(2) excluding the probing pads.</P>
65-㎚ RFCMOS공정 기반 145 ㎓ 이미징 검출기
윤대근(Daekeun Yoon),김남형(Namhyung Kim),김동현(Dong-Hyun Kim),이재성(Jae-Sung Rieh) 한국전자파학회 2013 한국전자파학회논문지 Vol.24 No.11
본 논문에서는 고주파 이미징 시스템에 사용되는 D-band 이미징 검출기(imaging detector)를 65-㎚ CMOS 공정을 이용하여 설계 및 제작한 결과를 보인다. 검출기 회로 구조는 resistive self-mixing 원리에 기초를 두고 있다. 제작된 검출기는 145 ㎓에서 400 V/W의 최대 반응도(responsivity)와 100 pW/㎐<SUP>1/2</SUP>의 최소 NEP(Noise Equivalent Power)를 보였다. 제작된 회로의 크기는 측정용 패드와 밸룬을 포함하여 400㎛ × 450㎛이며, 중심 회로의 크기는 150㎛ × 100㎛이다. In this work, a D-band imaging detector has been developed in a 65-㎚ CMOS technology for high frequency imaging application. The circuit was designed based on the resistive self-mixing of MOSFET devices. The fabricated detector exhibits a maximum responsivity of 400 V/W and minimum NEP of 100 pW/㎐<SUP>1/2</SUP> at 145 ㎓. The chip size is 400㎛ × 450㎛ including the probing pads and a balun, while the core of the circuit occupies only 150㎛ × lOO㎛.
65-nm CMOS 300 GHz 영상 검출기 및 영상 획득
윤대근(Daekeun Yoon),송기룡(Kiryong Song),이재성(Jae-Sung Rieh) 한국전자파학회 2014 한국전자파학회논문지 Vol.25 No.7
본 논문에서는 65-nm CMOS 공정을 이용하여 300 GHz 주파수 대역의 영상 검출기를 제작하고, 이에 기반하여 영상을 획득하였다. 검출기 회로 구조는 square-law 동작에 기초를 두고 있다. 제작된 검출기는 285 GHz에서 2,270 V/W의 최대 반응도(responsivity)와 38 pW/Hz<SUP>1/2</SUP>의 최소 NEP(Noise Equivalent Power)를 보였으며, 250~305 GHz의 범위에서 NEP<~200 pW/Hz<SUP>1/2</SUP>를 보였다. 측정용 패드와 밸룬(Balun)을 포함한 제작된 칩의 크기는 400 μm×450 μm이며, 측정용 요소들을 제외한 주요 칩의 크기는 150 μm×100 μm이다. In this work, a 300 GHz imaging detector has been developed and image has been acquired in a 65-nm CMOS technology. The circuit was designed based on the square-law of MOSFET devices. The fabricated detector exhibits a maximum responsivity of 2,270 V/W and minimum NEP of 38 pW/Hz<SUP>1/2</SUP> at 285 GHz, and NEP<~200 pW/Hz<SUP>1/2</SUP> for 250~305 GHz range. The chip size is 400 μm× 450 μm including the probing pads and a balun, while the core of the circuit occupies only 150 μm×100 μm.
300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology
Jongwon Yun,Daekeun Yoon,Hyunchul Kim,Jae-Sung Rieh Professional Technical Group on Microwace Theory a 2014 IEEE Transactions on Microwave Theory and Techniqu Vol. No.
<P>Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and a voltage-controlled oscillator (VCO), have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. Both oscillators adopted the common-base configuration for the cross-coupled oscillator core, providing higher oscillation frequency compared to the conventional common-emitter cross-coupled topology. The fabricated fixed-frequency oscillator and the VCO exhibited oscillation frequency of 305.8 GHz and 298.1-316.1 GHz (18-GHz tuning range) at dc power dissipation of 87.4 and 88.1 mW, respectively. The phase noise of the fixed-frequency oscillator was measured to be -116.5 dBc/Hz at 10 MHz offset. The peak output power of 5.3 dBm (3.8% dc-to-RF efficiency) and 4.7 dBm (3.2% dc-to-RF efficiency) were respectively achieved for the two oscillators, which are the highest reported power for a transistor-based single oscillator beyond 200 GHz.</P>
Two 320 GHz Signal Sources Based on SiGe HBT Technology
Yun, Jongwon,Yoon, Daekeun,Jung, Seungyoon,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung THE INSTITUTE OF ELECTRICAL ENGINEERS 2015 IEEE Microwave and Wireless Components Letters Vol. No.
<P>Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a <TEX>$G_{{m}}$</TEX>-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of <TEX>${-}6.3$</TEX> dBm and a phase noise of <TEX>${-}96.6$</TEX> dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and <TEX>${-}94.7$</TEX> dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.</P>
Kim, Jungsoo,Yoon, Daekeun,Yun, Jongwon,Song, Kiryong,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung IEEE 2018 IEEE transactions on terahertz science and technol Vol.8 No.5
<P>In this paper, three-dimensional (3-D) terahertz (THz) tomography was demonstrated with a signal source and imagers based on transistor circuits fabricated with standard semiconductor technologies. For the signal source, a 300-GHz oscillator based on InP HBT technology was employed. For detection, two types of imagers operating near 300 GHz were employed, one direct and the other heterodyne, both realized with SiGe HBT technology. With a set of 2-D images taken from different angles, sinograms and tomograms were obtained, which led to a successful reconstruction of 3-D images of the target object based on the filtered back-projection algorithm. A systematic comparison was made for the direct imager and the heterodyne imager, for which the signal input power and the video bandwidth were varied for both imagers. The results revealed that the heterodyne imager shows a better sensitivity than the direct imager. However, a similar dynamic range of around 30 dB was achieved for both imagers because of a saturation observed for the heterodyne imager when the input power exceeds the threshold. The video bandwidth did not affect the image quality significantly for the bandwidth variation over four orders of magnitude for both imagers.</P>