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Guan-Bo Lin,Xiaoguang Zhang,이수민,George Papasouliotis,김종규,E. Fred Schubert,조제희 한국물리학회 2015 Current Applied Physics Vol.15 No.10
Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1-xInxN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1-xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.
Guan-Bo Lin,Dong-Yeong Kim,Qifeng Shan,Jaehee Cho,Schubert, E. Fred,Hyunwook Shim,Cheolsoo Sone,Jong Kyu Kim IEEE 2013 IEEE photonics journal Vol.5 No.4
<P>The dependence of the polarization-induced electric field in GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) on the GaN quantum barrier (QB) thickness is investigated. Electrostatic arguments and simulations predict that a thin QB thickness reduces the electric field in the quantum wells (QWs) and also improves the LED efficiency. We experimentally demonstrate that the QW electric field decreases with decreasing QB thickness. The lower electric field results in a better overlap of electron and hole wave functions and better carrier confinement in the QWs. A reduced efficiency droop and enhanced internal quantum efficiency is demonstrated for GaInN/GaN LEDs when the QB thickness is reduced from 24.5 to 9.1 nm.</P>
Multi-type Feature Fusion Technique for Weed Identification in Cotton Fields
Guan Lin,Liu Zhenzhong,Wu Qiufeng,Wang Lulu 보안공학연구지원센터 2016 International Journal of Signal Processing, Image Vol.9 No.2
Weed identification is core of precision variable spray technology and weed information management system. Single type features are difficult to identify multi-class weeds in cotton fields. In this paper, multi-type feature fusion technique for weed identification is proposed. Firstly, multi-type features are extracted. In color feature extraction, FMS, SMS and TMS in HSI are extracted by color moment. In shape feature extraction, REC, RWL, CIR and SPH are extracted by geometric parameter method. In texture feature extraction, ASM, CON and COR are extracted by GLCM. Secondly, because feature dimension is too large, principle component analysis is used to reduce dimension to extract new features including COR, ASM, REC and two components. Finally, three comparative experiments including identification of five kinds of weeds, three kinds of weeds and two kinds of weeds are carried out. Experimental results show that method proposed in this paper is superior to state of the art and is suitable for identification of multi-class weeds. This method can also be applied in identifying weeds in other fields.
Guan-Lin Chiu,T. Subburaj,Sudipta Som,Chang-Ying Ou,Chung-Hsin Lu 한양대학교 세라믹연구소 2017 Journal of Ceramic Processing Research Vol.18 No.10
The iron-ion doped Cu(In, Ga)Se2 thin films were prepared on flexible stainless steel substrates via a non-vacuum spin-coatingprocess. The influence of iron-ion doping in the morphology and properties of Cu(In, Ga)Se2 solar cells was investigated indetail. When the molar ratio of iron ions to the total amount of indium and gallium ions in Cu(In, Ga)Se2 was increased, thegrain sizes of the Cu(In, Ga)Se2 thin films were reduced and the grain morphology became angular. Iron-ion doping in Cu(In,Ga)Se2 thin films substantially facilitated the formation of grain boundaries and additional shunt paths, leading to highprobability of electron-hole recombination. As a result, the conversion efficiency of the prepared Cu(In, Ga)Se2 solar cellsdecreased dramatically due to iron-ion doping.